The RF MOSFET Line

RF Power Field-Effect Transistor

N–Channel Enhancement–Mode

. . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range.

• Guaranteed 28 Volt, 150 MHz Performance

Output Power = 5.0 Watts

Minimum Gain = 11 dB

Efficiency — 55 (Typical)

• Small–Signal and Large–Signal Characterization

• Typical Performance at 400 MHz, 28 Vdc, 5.0 W

Output = 10.6 dB Gain

• 100 Tested For Load Mismatch At All Phase Angles

With 30:1 VSWR

• Low Noise Figure — 2.0 dB (Typ) at 200 mA, 150 MHz

• Excellent Thermal Stability, Ideally Suited For Class A

Operation