MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch at

Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960-1215MHz

Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960–1215MHz Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 150 W peak Minimum gain = 7.8 dB • 100 tested

T-1 Lamps, Visible-Infrared

T-1 Lamps, Visible-Infrared

1150H Reid Vapor Test Gauge

FEATURES „ Integral handle allows easy station-to-station transport

Original Strain Relief Bushings

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KNOB

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vapor source mass-flo controllers

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