NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1150MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 7.8 dB at 150 W/1090 MHz • Omnigold™ Metalization System

Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960-1215MHz

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 150 W peak Minimum gain = 7.8 dB • 100 tested for load mismatch at all phase angles with 10:1 VSWR • Indu

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load

Bipolar

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. ·Guaranteed Performance @ 1090 MHz, 50 Vdc - Output Power = 150 W Peak Minimum gain = 7.8 dB\n·Nitride Passivated\n·Industry Standard Package\n·100%Test for Load Mismatch at all Phase Angels with 10:1 VSWR\n·Internal Input Matching for Broadband Operation\n·Gold Metallized, Emitter Ballasted for;

封装/外壳：332A-03 包装：托盘 描述：TRANS NPN 150W 906MHZ-1215MHZ 分立半导体产品 晶体管 - 双极（BJT）- 射频

Microwave Pulse Power Silicon NPN Transistor

文件：191.65 Kbytes Page：5 Pages

Microwave Pulse Power Silicon NPN Transistor

文件：191.65 Kbytes Page：5 Pages

Microwave Pulse Power Silicon NPN Transistor

文件：191.65 Kbytes Page：5 Pages

Microwave Pulse Power Silicon NPN Transistor

文件：549.63 Kbytes Page：6 Pages

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N