MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load

Microwave Pulse Power Silicon NPN Transistor 150W (peak), 960-1215MHz

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 150 W peak Minimum gain = 7.8 dB • 100 tested for load mismatch at all phase angles with 10:1 VSWR • Indu

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1150MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 7.8 dB at 150 W/1090 MHz • Omnigold™ Metalization System

Microwave Pulse Power Silicon NPN Transistor

文件：191.65 Kbytes Page：5 Pages

Microwave Pulse Power Silicon NPN Transistor

文件：191.65 Kbytes Page：5 Pages

封装/外壳：332A-03 包装：托盘 描述：TRANS NPN 150W 906MHZ-1215MHZ 分立半导体产品 晶体管 - 双极（BJT）- 射频

Microwave Pulse Power Silicon NPN Transistor

文件：191.65 Kbytes Page：5 Pages

Microwave Pulse Power Silicon NPN Transistor

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T-1 Lamps, Visible-Infrared

T-1 Lamps, Visible-Infrared

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FEATURES „ Integral handle allows easy station-to-station transport

Original Strain Relief Bushings

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KNOB

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vapor source mass-flo controllers

文件：202.66 Kbytes Page：4 Pages