The RF Line

Microwave Pulse Power Transistor

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters.

• Guaranteed Performance @ 1090 MHz, 50 Vdc

Output Power = 150 Watts Peak

Minimum Gain = 7.8 dB

• 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Industry Standard Package

• Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

• Internal Input Matching for Broadband Operation