Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960-1215MHz

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 90 W peak Minimum gain = 8.4 dB • 100 tested for load mismatch at all phase angles with 10:1 VSWR • Industry standard

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch at

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF1090MB is Designed for High Peak power & low duty cycle, IFF, DME, and TACAN Applications. FEATURES: • Internal Input Matching Network • PG = 8.4 dB at 90 W/1150 MHz • Omnigold™ Metalization System

Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960-1215MHz

Microwave Pulse Power Silicon NPN Transistor 90W (peak), 960–1215MHz Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed performance @ 1090 MHz, 50 Vdc Output power = 90 W Peak Minimum gain = 8.4 dB • 100 tested f

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch a

MICROWAVE POWER TRANSISTOR NPN SILICON

The RF Line Microwave Pulse Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB • 100 Tested for Load Mismatch at

90 W, microwave power transistor NPN silicon

Bipolar

封装/外壳：332A-03 包装：托盘 描述：RF TRANS NPN 70V 332A-03 分立半导体产品 晶体管 - 双极（BJT）- 射频

Microwave Pulse Power Silicon NPN Transistor

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Microwave Pulse Power Silicon NPN Transistor

文件：185.79 Kbytes Page：5 Pages

Microwave Pulse Power Silicon NPN Transistor

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Inst, 50 Pr #16 Str BC, PVC-NYL Ins E1, OS, Blk PVC Jkt, 600V TC-ER 150V NPLF TFN

Product Description UL Instrumentation, 50 Pair 16AWG (7x24) Bare Copper, PVC-NYL Insulation E1 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC-ER 150V NPLF TFN 90C Dry 75C Wet SUN RES DIR BUR

90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance p

90 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz

[GHz-Technology] GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The transistor includes input prematch for broadband capability. The device has gold thinfilm metallization for proven highest MTTF. Low the

90 Watts, 50 Volts, Class C Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION The 1090MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance p

Non-Relampable Neon Indicator Lights

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