LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

WR-08 E-Plane Waveguide Bend, 90°

FEATURES Frequency Coverage: 90 to 140 GHz Rugged Waveguide Configuration Low Insertion Loss APPLICATIONS Test Instrumentation Sub-assemblies Lab Use

WR-08 H-Plane Waveguide Bend, 90

FEATURES Frequency Coverage: 90 to 140 GHz Rugged Waveguide Configuration Low Insertion Loss APPLICATIONS Test Instrumentation Sub-assemblies Lab Use

WR-08 Waveguide Twist, 90°

FEATURES Frequency Coverage: 90.0 to 140.0 GHz Rugged Waveguide Configuration Low Insertion Loss APPLICATIONS Test Instrumentations Sub-assemblies Lab Use

Coarse Wavelength Division Multiplexer/Demultiplexer (CWDM) Filter

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