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08090中文资料

厂家型号

08090

文件大小

205.95Kbytes

页面数量

10

功能描述

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

数据手册

下载地址一下载地址二到原厂下载

生产厂商

INFINEON

08090数据手册规格书PDF详情

Description

The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Features

• Broadband internal matching

• Typical EDGE performance

- Average output power = 45 W

- Gain = 18 dB

- Efficiency = 40

• Typical CW performance

- Output power at P–1dB = 120 W

- Gain = 17 dB

- Efficiency = 60

• Integrated ESD protection: Human Body Model, Class 1 (minimum)

• Excellent thermal stability

• Low HCI drift

• Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power

08090产品属性

  • 类型

    描述

  • 型号

    08090

  • 制造商

    INFINEON

  • 制造商全称

    Infineon Technologies AG

  • 功能描述

    LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

更新时间:2025-10-16 11:01:00
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