Proximity Capacitive Touch Sensor Controller

The MPR121 is a second generation sensor controller. The MPR121 features increased internal intelligence plus a second generation capacitance detection engine. Some major enhancements include an increased electrode count, a hardware configurable I2C address, an expanded filtering system with debounc • 1.71V to 3.6V operation\n• 29µA typical run current at 16 ms sampling interval\n• 3µA in scan stop mode current\n• 12 electrodes/capacitance sensing inputs in which 8 are multifunctional for LED driving and GPIO\n• Integrated independent autocalibration for each electrode input\n• Autoconfiguratio;

Proximity Capacitive Touch Sensor Controller

Proximity Capacitive Touch Sensor Controller

文件：253.16 Kbytes Page：13 Pages

Proximity Capactive touch Senosr controller

文件：571.02 Kbytes Page：57 Pages

Proximity Capactive touch Senosr controller

文件：571.02 Kbytes Page：57 Pages

Proximity Capactive touch Senosr controller

文件：571.02 Kbytes Page：57 Pages

Proximity Capacitive Touch Sensor Controller

文件：253.16 Kbytes Page：13 Pages

封装/外壳：20-UFQFN 包装：管件 描述：IC CTLR TOUCH SENSOR 20-QFN 集成电路（IC） 传感器，电容式触控

Metal Strip Resistor Low Ohmic

文件：413.41 Kbytes Page：4 Pages

Metal Strip Resistor Low Ohmic

文件：413.41 Kbytes Page：4 Pages

Metal Strip Resistor Low Ohmic

文件：413.41 Kbytes Page：4 Pages

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board