丝印代码：TIP121；TO-220-3L Plastic-Encapsulate Transistors

FEATURES Medium Power Complementary Silicon Transistors

Darlington Transistors

Features • Designed for general-purpose amplifier and low speed switching applications • Collector-emitter sustaining voltage - Vceo(sus) = 60V (minimum) - TIP120, TIP125 80V (minimum) - TIP121, TIP126 100V (minimum) - TIP122, TIP127 • Collector-emitter saturation voltage - Vce(sat) = 2V (max

中等功率 NPN 达林顿双极功率晶体管

The Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) are complementary devices. • High DC Current Gain -hFE = 2500 (typ) @ IC = 4.0 Adc\n• Collector-Emitter Sustaining Voltage @ 100 mAVCEO(sus) = 60 Vdc (Min)TIP120, TIP125 VCEO(sus) = 80 Vdc (Min)TIP121, TIP126VCEO(sus) = 100 Vdc (Min)TIP122, TIP127\n• Low Collector-Emitter Saturation VoltageVCE(sat) = 2.0 Vdc(Max) @ IC= 3.0 Ad;

Silicon Power darlington Complementary transistors

DESCRIPTION The CENTRAL SEMICONDUCTOR TIP120, TIP125 series types are Complementary Silicon Power Darlington Transistors designed for low speed switching and amplifier applications.

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP125/126/127

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP125, TIP126 and TIP127 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Comp

Power Darlingtons for Linear and Switching Applications

TIP120, 121, 122 NPN PLASTIC POWER TRANSISTORS TIP125, 126, 127 PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications

Si-Epitaxial PlanarTransistors

Si-Epitaxial Planar Transistors Collector current – Kollektorstrom 5 A Plastic case TO-220AB Weight approx. – Gewicht ca. 2.2 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

Medium Power Linear Switching Applications

Features • Medium Power Linear Switching Applications • Complementary to TIP125 / TIP126 / TIP127

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

Darlington Power Transistors (NPN)

Features •Designed for general-purpose amplifier and low speed switching applications •RoHS Compliant

Darlington Transistors

[SGS] POWER DARLINGTONS The TIP120, TIP121 and TIP122 are silicon epitaxial-base NPN transistors in monolithic Darlington configuration in Jedec TO-220 plastic package, intended for use in power linear and switching applications. The complementary PNP types are the TIP125, TIP126 and TIP127 res

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP125/126/127 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications.

Monolithic Construction With Built In Base-Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP125/126/127

BASE NPN / PNP

EPITAXIAL BASE NPN / PNP POWER DARLINGTONS

PNP/NPN Silicon Power Transistor

FEATURES: * Medium Power Complementary silicon transistors * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP)

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP125/126/127 APPLICATIONS • Designed for general–purpose amplifier and low–speed switching applications.

Darlington TRANSISTOR (NPN)

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Collec

NPN Epitaxial Darlington Transistor

Features • Medium Power Linear Switching Applications • Complementary to TIP125 / TIP126 / TIP127

TO-220-3L Plastic-Encapsulate Transistors

TO-220-3L Plastic-Encapsulate Transistors TIP120,121,122 Darlington TRANSISTOR (NPN) TIP125,126,127 Darlington TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

ThinkiSemi mature NPN Epitaxial Darlington Transistor

Features ※ Complementary to TIP125/TIP126/TIP127 ※ Switching Times with Inductive Loads ※ Saturation Voltages ※ Leakage Currents ※ Fast Turn–Off Times Application ※ Medium Power Linear Switching Applications ※ AC and DC Motor Controls ※ Inverters,Solenoid and Relay Drivers Mechanical Dat

NPN SILICON POWER DARLINGTONS

文件：97.86 Kbytes Page：4 Pages

SILICON DARLINGTON POWER TRANSISTORS

文件：103.57 Kbytes Page：3 Pages

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 80V 5A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium-Power Complementary Silicon Transistors

文件：144.18 Kbytes Page：7 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：114.79 Kbytes Page：7 Pages

TO-220 - Power Transistors and Darlingtons

文件：76.15 Kbytes Page：3 Pages

Darlington TRANSISTOR (NPN)

文件：108.35 Kbytes Page：2 Pages

Complementary power Darlington transistors

文件：616.93 Kbytes Page：13 Pages

Si-Epitaxial Planar Darlington Power Transistors

文件：110.5 Kbytes Page：2 Pages

Plastic-Encapsulated Transistors

文件：57.83 Kbytes Page：1 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：91.49 Kbytes Page：7 Pages

Darlington TRANSISTOR (NPN)

文件：270.32 Kbytes Page：2 Pages

Silicon NPN Darlington Power Transistors

文件：129.08 Kbytes Page：4 Pages

NPN SILICON POWER DARLINGTONS

文件：81.7 Kbytes Page：4 Pages

NPN SILICON POWER DARLINGTONS

文件：97.86 Kbytes Page：4 Pages

封装/外壳：TO-220-3 包装：管件 描述：TRANS NPN DARL 80V 5A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TO-220 Darlington Transistor

达林顿管

DARLINGTON TRANSISTOR (NPN)

TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN) TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP) FEATURES ● Medium Power Complementary Silicon Transistors

Darlington TRANSISTOR (NPN)

TIP120F,121F,122F Darlington TRANSISTOR (NPN) TIP125F,126F,127F Darlington TRANSISTOR (PNP) FEATURES Medium Power Complementary silicon transistors

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS High Power Switching, Hammer Drive, Pulse Motor Drive and Inductive Load Drive Applications

NPN Epitaxial Darlington Transistor

Features • Medium Power Linear Switching Applications • Complementary to TIP125 / TIP126 / TIP127

NPN Epitaxial Darlington Transistor

文件：540.16 Kbytes Page：5 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：144.18 Kbytes Page：7 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：91.49 Kbytes Page：7 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：114.79 Kbytes Page：7 Pages

NPN SILICON POWER DARLINGTONS

文件：97.86 Kbytes Page：4 Pages

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board