位置:首页 > IC中文资料第6618页 > UN121K

UN121K晶体管资料

  • UN121K别名:UN121K三极管、UN121K晶体管、UN121K晶体三极管

  • UN121K生产厂家:日本松下公司

  • UN121K制作材料:Si-N+R

  • UN121K性质

  • UN121K封装形式:直插封装

  • UN121K极限工作电压:50V

  • UN121K最大电流允许值:0.5A

  • UN121K最大工作频率:<1MHZ或未知

  • UN121K引脚数:3

  • UN121K最大耗散功率:0.6W

  • UN121K放大倍数

  • UN121K图片代号:A-68

  • UN121Kvtest:50

  • UN121Khtest:999900

  • UN121Katest:0.5

  • UN121Kwtest:0.6

  • UN121K代换 UN121K用什么型号代替:DTC114WS,

型号 功能描述 生产厂家 企业 LOGO 操作
UN121K

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board

PANASONIC

松下

UN121K

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board

PANASONIC

松下

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

MOSEL

茂矽电子

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

NTE

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

MOTOROLA

摩托罗拉

UN121K产品属性

  • 类型

    描述

  • 型号

    UN121K

  • 制造商

    PANASONIC

  • 制造商全称

    Panasonic Semiconductor

  • 功能描述

    Silicon NPN epitaxial planer transistor

UN121K数据表相关新闻