封装/外壳：6-SMD，鸥翼 包装：卷带（TR） 描述：OPTOISO 5.3KV DARLINGTON 6-SMD 隔离器 光隔离器 - 晶体管，光电输出

丝印代码：MOC8050；6-Pin DIP Photodarlington Optocoupler (No Base Connection)

Features ■ High BV CEO: – Minimum 50 V (MOC8021M) – Minimum 80 V (MOC8050M) ■ High Current Transfer Ratio: – Minimum 1000% (MOC8021M) – Minimum 500% (MOC8050M) ■ No Base Connection for Improved Noise Immunity ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Min

Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

丝印代码：MOC8050；6-Pin DIP Photodarlington Optocoupler (No Base Connection)

Features ■ High BV CEO: – Minimum 50 V (MOC8021M) – Minimum 80 V (MOC8050M) ■ High Current Transfer Ratio: – Minimum 1000% (MOC8021M) – Minimum 500% (MOC8050M) ■ No Base Connection for Improved Noise Immunity ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Min

丝印代码：MOC8050；6-Pin DIP Photodarlington Optocoupler (No Base Connection)

Features ■ High BV CEO: – Minimum 50 V (MOC8021M) – Minimum 80 V (MOC8050M) ■ High Current Transfer Ratio: – Minimum 1000% (MOC8021M) – Minimum 500% (MOC8050M) ■ No Base Connection for Improved Noise Immunity ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Min

Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

丝印代码：MOC8050；6-Pin DIP Photodarlington Optocoupler (No Base Connection)

Features ■ High BV CEO: – Minimum 50 V (MOC8021M) – Minimum 80 V (MOC8050M) ■ High Current Transfer Ratio: – Minimum 1000% (MOC8021M) – Minimum 500% (MOC8050M) ■ No Base Connection for Improved Noise Immunity ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Min

封装/外壳：6-SMD，鸥翼 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：OPTOISO 4.17KV DARLINGTON 6SMD 隔离器 光隔离器 - 晶体管，光电输出

6-Pin DIP Optoisolators Darlington Ouput(No Base Connection)

The MOC8030 and MOC8050 devices consist of gallium arsenide infrared emitting diodes optically coupled to monolithic silicon photodarlington detectors. The chip to Pin 6 base connection has been eliminated to improve output performance in high noise environments. They are best suited for use in a

TRANSISTOR (NPN)

FEATURES ● Power Dissipation PCM : 1 W (Tamb=25°C) ● Collector Current ICM : 1.5 A ● Collector - Base Voltage V(BR)CBO : 40V

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