Photodarlington Optocoupler (No Base Connection)

Description The MOC8021M and MOC8050M are photodarlington type optically coupled optocoupler. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. Features ■ High BVCEO – Minimum 50V (MOC8021M) – Minimum 80V (MOC8050M) ■ High cu

6-Pin DIP Photodarlington Optocoupler (No Base Connection)

Features ■ High BV CEO: – Minimum 50 V (MOC8021M) – Minimum 80 V (MOC8050M) ■ High Current Transfer Ratio: – Minimum 1000% (MOC8021M) – Minimum 500% (MOC8050M) ■ No Base Connection for Improved Noise Immunity ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Min

NPN EPITAXIAL SILICON PLANAR TRANSISTOR

GENERAL DESCRIPTION The 8050 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuit. Complementary to 8550.

NPN TRANSISTOR

Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.

isc Silicon NPN Power Transistor

DESCRIPTION • With SOT-23 packaging • High collector-base voltage • Low saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Audio output stage and converters/inverters circuits