位置:首页 > IC中文资料第732页 > MMBT4401
MMBT4401晶体管资料
MMBT4401别名:MMBT4401三极管、MMBT4401晶体管、MMBT4401晶体三极管
MMBT4401生产厂家:美国摩托罗拉半导体公司
MMBT4401制作材料:
MMBT4401性质:射频/高频放大 (HF)_通用 (G)
MMBT4401封装形式:
MMBT4401极限工作电压:60V
MMBT4401最大电流允许值:0.6A
MMBT4401最大工作频率:<1MHZ或未知
MMBT4401引脚数:
MMBT4401最大耗散功率:0.3W
MMBT4401放大倍数:
MMBT4401图片代号:NO
MMBT4401vtest:60
MMBT4401htest:999900
- MMBT4401atest:0.6
MMBT4401wtest:0.3
MMBT4401代换 MMBT4401用什么型号代替:
MMBT4401价格
参考价格:¥0.1191
型号:MMBT4401 品牌:DIODES 备注:这里有MMBT4401多少钱,2025年最近7天走势,今日出价,今日竞价,MMBT4401批发/采购报价,MMBT4401行情走势销售排行榜,MMBT4401报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
MMBT4401 | NPN General Purpose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MMBT4401 | NPN General-Purpose Amplifier Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | ONSEMI 安森美半导体 | ||
MMBT4401 | NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. | UTC 友顺 | ||
MMBT4401 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features ● Epitaxial Planar Die Construction ● Ideal for Medium Power Amplification and Switching ● Complementary PNP Type: MMBT4403 ● Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | ||
MMBT4401 | Surface Mount General Purpose Si-Epi-Planar Transistors Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | Diotec 德欧泰克 | ||
MMBT4401 | Surface Mount General Purpose Si-Epi-Planar Transistors Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. – Gewicht ca. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped an | Diotec 德欧泰克 | ||
MMBT4401 | NPN General Purpose Amplifier Features • Halogen free available upon request by adding suffix -HF • Surface Mount SOT-23 Package • Capable of 350mWatts of Power Dissipation • Operating and Storage Junction Temperatures: -55ć to 150ć • IC=600mA • Marking:2X/M4A • Lead Free Finish/RoHS Compliant (P Suffix designates R | MCC | ||
MMBT4401 | Switching Transistor NPN Silicon Switching Transistor NPN Silicon | WEITRON | ||
MMBT4401 | NPN Silicon Epitaxial Planar Transistor FEATURES • Epitaxial planar die construction. • Complementary PNP type available: MMBT4403. • Ideal for medium power amplification and switching. APPLICATIONS • General purpose application, switching application. | BILIN 银河微电 | ||
MMBT4401 | TRANSISTOR(NPN) FEATURES Switching transistor | HTSEMI 金誉半导体 | ||
MMBT4401 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Switching Transistor | JIANGSU 长电科技 | ||
MMBT4401 | NPN Transistors ■ Features ● Ideal for Medium Power Amplification and Switching ● Complementary PNP Type Available (MMBT4403) | KEXIN 科信电子 | ||
MMBT4401 | SMALL SIGNAL TRANSISTORS (NPN) FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor MMBT4403 is recommended. ♦ This transistor is also available in the TO-92 case with the type designation 2N4401. | GE GE Industrial Company | ||
MMBT4401 | General purpose application Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with MMBT4403 | KODENSHI 可天士 | ||
MMBT4401 | We declare that the material of product compliant with RoHS requirements and Halogen Free. FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. | LEIDITECH 雷卯电子 | ||
MMBT4401 | NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • In compliance with EU RoHS 2002/95/EC directives | PANJIT 強茂 | ||
MMBT4401 | NPN Silicon Switching Transistor NPN Silicon Switching Transistor | SECOS 喜可士 | ||
MMBT4401 | NPN Silicon General Purpose Transistor As complementary types the NPN transistor MMBT4403 is recommended. | SEMTECH_ELEC 先之科半导体 | ||
MMBT4401 | SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications | TAITRON | ||
MMBT4401 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT4403) • Ideal for Medium Power Amplification and Switching | TRSYS Transys Electronics | ||
MMBT4401 | SWITCHING TRANSISTOR NPN SILICON Switching Transistor NPN Silicon | ZOWIE 智威 | ||
MMBT4401 | NPN Silicon Epitaxial Planar Transistor FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available: MMBT4403. ● Ideal for medium power amplification and switching. APPLICATIONS ● General purpose application, switching application. | LUGUANG 鲁光电子 | ||
MMBT4401 | NPN Silicon General Purpose Transistor NPN Silicon General Purpose Transistor As complementary types the NPN transistor MMBT4403 is recommended. | DGNJDZ 南晶电子 | ||
MMBT4401 | Plastic-Encapsulate Transistors Plastic-Encapsulate Transistors FEATURES Switching transistor | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份(香港)有限公司 | ||
MMBT4401 | Silicon NPN transistor in a SOT-23 Plastic Package Description Silicon NPN transistor in a SOT-23 Plastic Package. Features Moisture Sensitivity Level: 1, ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V. Applications Medium power amplifier and switch requiring collector currents up to 500 mA. | FOSHAN 蓝箭电子 | ||
MMBT4401 | Amplifiers & Switches Amplifiers & Switches Bipolar: General Purpose | AMMSEMI | ||
MMBT4401 | TRANSISTOR(NPN) FEATURES Switching transistor | GWSEMI 唯圣电子 | ||
MMBT4401 | NPN Transistors ■ Features ● Ideal for Medium Power Amplification and Switching ● Complementary PNP Type Available (MMBT4403) | YFWDIODE 佑风微 | ||
MMBT4401 | Switching transistor Plastic-Encapsulate Transistors FEATURES Switching transistor | HOTTECH 合科泰 | ||
MMBT4401 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NPN ) Features ● Switching Transistor | HDSEMI 海德半导体 | ||
MMBT4401 | SOT-23 Plastic-Encapsulate Transistors FEATURES Switching Transistor | UMW 友台半导体 | ||
MMBT4401 | NPN Plastic-Encapsulate Transistors 文件:1.06687 Mbytes Page:5 Pages | JINGHENG 晶恒 | ||
MMBT4401 | TRANSISTOR ( NPN) 文件:564.16 Kbytes Page:3 Pages | BYTESONIC 松浩电子 | ||
MMBT4401 | Plastic-Encapsulate Transistors 文件:286.24 Kbytes Page:1 Pages | SHENZHENSLS 三联盛 | ||
MMBT4401 | NPN Transistor 文件:696.39 Kbytes Page:4 Pages | PJSEMI 平晶半导体 | ||
MMBT4401 | TRANSISTOR ( NPN) 文件:276.7 Kbytes Page:2 Pages | KOOCHIN 灏展电子 | ||
MMBT4401 | NPN Switching Transistor 文件:399.08 Kbytes Page:4 Pages | GSME 桂微 | ||
MMBT4401 | NPN Silicon Epitaxial Planar Transistor 文件:179.56 Kbytes Page:4 Pages | BILIN 银河微电 | ||
MMBT4401 | SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 文件:356.64 Kbytes Page:6 Pages | RECTRON 丽正国际 | ||
MMBT4401 | NPN General Purpose Amplifier 文件:220.09 Kbytes Page:4 Pages | MCC | ||
MMBT4401 | NPN General Purpose Amplifier 文件:95.52 Kbytes Page:4 Pages | MCC | ||
MMBT4401 | NPN General Purpose Amplifier 文件:189.9 Kbytes Page:4 Pages | MCC | ||
MMBT4401 | SMD General Purpose PNP Transistors 文件:145.87 Kbytes Page:2 Pages | Diotec 德欧泰克 | ||
MMBT4401 | SMD General Purpose NPN Transistors 文件:143.95 Kbytes Page:2 Pages | Diotec 德欧泰克 | ||
MMBT4401 | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS NPN 40V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | |
MMBT4401 | Transistor | ETC 知名厂家 | ETC | |
MMBT4401 | 通用型双极晶体管 | PANJIT 強茂 | ||
MMBT4401 | NPN, 40V, 0.6A, SOT23 | DIODES 美台半导体 | ||
MMBT4401 | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | ||
MMBT4401 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件:124.03 Kbytes Page:4 Pages | DIODES 美台半导体 | ||
MMBT4401 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件:90.9 Kbytes Page:4 Pages | DIODES 美台半导体 | ||
MMBT4401 | NPN GENERAL PURPOSE AMPLIFIER 文件:274.05 Kbytes Page:6 Pages | UTC 友顺 | ||
MMBT4401 | NPN General Pupose Amplifier 文件:93.3 Kbytes Page:7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features ● Epitaxial Planar Die Construction ● Ideal for Medium Power Amplification and Switching ● Complementary PNP Type: MMBT4403 ● Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | |||
NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. | UTC 友顺 | |||
NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
General Purpose Transistor General Purpose Transistor RoHS Device Features - Switching Transistor | COMCHIP 典琦 | |||
Switching Transistor NPN Silicon Switching Transistor NPN Silicon Lead free product Halogen-free type | ZOWIE 智威 | |||
PNP Epitaxial Silicon Transistor PNP Epitaxial Silicon Transistor Switching Transistor | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Switching Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 |
MMBT4401产品属性
- 类型
描述
- 型号
MMBT4401
- 功能描述
两极晶体管 - BJT SOT-23 NPN GEN PUR
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-723 |
6547 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON/安森美 |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON |
2016+ |
SOT23 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON |
23+ |
SOT23_3 |
20000 |
全新原装假一赔十 |
|||
ON-SEMI |
22+ |
N/A |
3000 |
原装正品 香港现货 |
|||
ON/安森美 |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
|||
DIODES/美台 |
25+ |
SOT23 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
VISHAY |
23+ |
SOT-23 |
19567 |
||||
ON(安森美) |
2024+ |
NA |
500000 |
诚信服务,绝对原装原盘 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
MMBT4401芯片相关品牌
MMBT4401规格书下载地址
MMBT4401参数引脚图相关
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- MMBTA43
- MMBTA42
- MMBTA28
- MMBTA20
- MMBTA14
- MMBTA13
- MMBTA12
- MMBTA11
- MMBTA10
- MMBTA06
- MMBTA05
- MMBT945
- MMBT930
- MMBT918
- MMBT8599
- MMBT8598
- MMBT720
- MMBT6543
- MMBT6520
- MMBT6517
- MMBT6429
- MMBT6428
- MMBT6427
- MMBT6426
- MMBT619
- MMBT593
- MMBT591
- MMBT589
- MMBT56
- MMBT5551
- MMBT5550
- MMBT5401
- MMBT5089
- MMBT5088
- MMBT493
- MMBT491
- MMBT4403
- MMBT42
- MMBT4126
- MMBT4125
- MMBT4124
- MMBT4123
- MMBT404A
- MMBT404
- MMBT3906
- MMBT3904
- MMBT3903
- MMBT3640
- MMBT2907A
- MMBT2907
- MMBT28S
- MMBT2484
- MMBT2369
- MMBT2222A
- MMBT2222
- MMBT200
- MMBT100
- MMBS5062
- MMBS5061
- MMBS5060
- MMBR951
- MMBR941
- MMBR931
- MMBR930
- MMBR920
- MMBR911
- MMBR571
- MMBF170
- MMBF102
- MMBD914
- MMBD770
- MMBD717
- MMBD701
- MMBD452
- MMBD355
- MMBD354
MMBT4401数据表相关新闻
MMBT3906G-SOT23.3R-TG_UTC代理商
MMBT3906G-SOT23.3R-TG_UTC代理商
2023-2-9MMBT3906WT1G 双极晶体管 - 双极结型晶体管(BJT)
MMBT3906WT1G 双极晶体管 - 双极结型晶体管(BJT),SC-70-3 ,ON安森美原装现货
2022-2-22MMBT4401 CJ/长电 SOT-23 支持原装长电订货型号,欢迎咨询!
MMBT4401 CJ/长电 SOT-23
2021-5-15MMBT4401 CJ/长电 SOT-23 支持原装长电现货订货,欢迎咨询
MMBT4401 CJ/长电 SOT-23
2021-3-9MMBT4401LT1G
晶体管类型:NPN 电流 - 集电极(Ic)(最大值):600mA 电压 - 集射极击穿(最大值):40V 不同?Ib,Ic 时的?Vce 饱和值(最大值):750mV @ 50mA,500mA 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):100 @ 150mA,1V 功率 - 最大值:300mW 频率 - 跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC
2020-9-3MMBT3906LT1G
晶体管类型:PNP 电流 - 集电极(Ic)(最大值):200mA 电压 - 集射极击穿(最大值):40V 不同?Ib,Ic 时的?Vce 饱和值(最大值):400mV @ 5mA,50mA 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):100 @ 10mA,1V 功率 - 最大值:300mW 频率 - 跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59
2020-9-3
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105