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MMBT4401晶体管资料
MMBT4401别名:MMBT4401三极管、MMBT4401晶体管、MMBT4401晶体三极管
MMBT4401生产厂家:美国摩托罗拉半导体公司
MMBT4401制作材料:
MMBT4401性质:射频/高频放大 (HF)_通用 (G)
MMBT4401封装形式:
MMBT4401极限工作电压:60V
MMBT4401最大电流允许值:0.6A
MMBT4401最大工作频率:<1MHZ或未知
MMBT4401引脚数:
MMBT4401最大耗散功率:0.3W
MMBT4401放大倍数:
MMBT4401图片代号:NO
MMBT4401vtest:60
MMBT4401htest:999900
- MMBT4401atest:0.6
MMBT4401wtest:0.3
MMBT4401代换 MMBT4401用什么型号代替:
MMBT4401价格
参考价格:¥0.1191
型号:MMBT4401 品牌:DIODES 备注:这里有MMBT4401多少钱,2025年最近7天走势,今日出价,今日竞价,MMBT4401批发/采购报价,MMBT4401行情走势销售排行榜,MMBT4401报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MMBT4401 | NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT4403) •IdealforMediumPowerAmplificationandSwitching | TRSYS Transys Electronics | ||
MMBT4401 | NPNGeneralPurposeAmplifier Thisdeviceisdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MMBT4401 | NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features ●EpitaxialPlanarDieConstruction ●IdealforMediumPowerAmplificationandSwitching ●ComplementaryPNPType:MMBT4403 ●TotallyLead-Free&FullyRoHScompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHig | DIODESDiodes Incorporated 美台半导体 | ||
MMBT4401 | SMALLSIGNALTRANSISTORS(NPN) FEATURES ♦NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. ♦Ascomplementarytype,thePNPtransistorMMBT4403isrecommended. ♦ThistransistorisalsoavailableintheTO-92casewiththetypedesignation2N4401. | GE GE Industrial Company | ||
MMBT4401 | NPNGeneralPurposeAmplifier Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •SurfaceMountSOT-23Package •Capableof350mWattsofPowerDissipation •OperatingandStorageJunctionTemperatures:-55ćto150ć •IC=600mA •Marking:2X/M4A •LeadFreeFinish/RoHSCompliant(PSuffixdesignates R | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | ||
MMBT4401 | SwitchingTransistorNPNSilicon SwitchingTransistorNPNSilicon | WEITRON Weitron Technology | ||
MMBT4401 | NPNGENERALPURPOSEAMPLIFIER DESCRIPTION TheUTCMMBT4401isdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
MMBT4401 | SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDiotec Semiconductor 德欧泰克 | ||
MMBT4401 | SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.–Gewichtca.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedan | DiotecDiotec Semiconductor 德欧泰克 | ||
MMBT4401 | NPNSiliconEpitaxialPlanarTransistor FEATURES •Epitaxialplanardieconstruction. •ComplementaryPNPtypeavailable:MMBT4403. •Idealformediumpoweramplificationandswitching. APPLICATIONS •Generalpurposeapplication,switchingapplication. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
MMBT4401 | SMDGeneralPurposeTransistor(NPN) Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications | TAITRON TAITRON Components Incorporated | ||
MMBT4401 | TRANSISTOR(NPN) FEATURES Switchingtransistor | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
MMBT4401 | NPNSiliconGeneralPurposeTransistor AscomplementarytypestheNPNtransistorMMBT4403isrecommended. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技(东莞)有限公司 | ||
MMBT4401 | SWITCHINGTRANSISTORNPNSILICON SwitchingTransistorNPNSilicon | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | ||
MMBT4401 | NPNSiliconSwitchingTransistor NPNSiliconSwitchingTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | ||
MMBT4401 | NPNGENERALPURPOSESWITCHINGTRANSISTOR VOLTAGE40VoltsPOWER225mWatts FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=600mA •IncompliancewithEURoHS2002/95/ECdirectives | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | ||
MMBT4401 | Generalpurposeapplication Descriptions •Generalpurposeapplication •Switchingapplication Features •LowLeakagecurrent •Lowcollectorsaturationvoltageenablinglowvoltageoperation •ComplementarypairwithMMBT4403 | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | ||
MMBT4401 | NPNSiliconGeneralPurposeTransistor NPNSiliconGeneralPurposeTransistor AscomplementarytypestheNPNtransistor MMBT4403isrecommended. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
MMBT4401 | Amplifiers&Switches Amplifiers&Switches Bipolar:GeneralPurpose | AMMSEMIAmerican Microsemiconductor 美国微半导体有限公司 | ||
MMBT4401 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) Features ●SwitchingTransistor | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | ||
MMBT4401 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●SwitchingTransistor | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | ||
MMBT4401 | Plastic-EncapsulateTransistors Plastic-EncapsulateTransistors FEATURES Switchingtransistor | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份(香港)有限公司 | ||
MMBT4401 | Switchingtransistor Plastic-EncapsulateTransistors FEATURES Switchingtransistor | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | ||
MMBT4401 | SiliconNPNtransistorinaSOT-23PlasticPackage Description SiliconNPNtransistorinaSOT-23PlasticPackage. Features MoistureSensitivityLevel:1,ESDRating:HumanBodyModel;4kV,MachineModel;400V. Applications Mediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
MMBT4401 | NPNSiliconEpitaxialPlanarTransistor FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable:MMBT4403. ●Idealformediumpoweramplificationandswitching. APPLICATIONS ●Generalpurposeapplication,switchingapplication. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
MMBT4401 | NPNTransistors ■Features ●IdealforMediumPowerAmplificationandSwitching ●ComplementaryPNPTypeAvailable(MMBT4403) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | ||
MMBT4401 | NPNTransistors ■Features ●IdealforMediumPowerAmplificationandSwitching ●ComplementaryPNPTypeAvailable(MMBT4403) | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
MMBT4401 | WedeclarethatthematerialofproductcompliantwithRoHSrequirementsandHalogenFree. FEATURES 1)Wedeclarethatthematerialofproductcompliantwith RoHSrequirementsandHalogenFree. 2)S-PrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC-Q101 QualifiedandPPAPCapable. | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
MMBT4401 | NPNGeneral-PurposeAmplifier Description Thisdeviceisdesignedforuseasamediumpower amplifierandswitchrequiringcollectorcurrentsupto500mA. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MMBT4401 | SOT-23Plastic-EncapsulateTransistors FEATURES SwitchingTransistor | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | ||
MMBT4401 | TRANSISTOR(NPN) FEATURES Switchingtransistor | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | ||
MMBT4401 | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS NPN 40V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | |
MMBT4401 | NPNTransistor 文件:696.39 Kbytes Page:4 Pages | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 | ||
MMBT4401 | NPNPlastic-EncapsulateTransistors 文件:1.06687 Mbytes Page:5 Pages | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 | ||
MMBT4401 | 封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MMBT4401 | NPNGENERALPURPOSEAMPLIFIER 文件:274.05 Kbytes Page:6 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | ||
MMBT4401 | SMDGeneralPurposeNPNTransistors 文件:143.95 Kbytes Page:2 Pages | DiotecDiotec Semiconductor 德欧泰克 | ||
MMBT4401 | NPNGeneralPurposeAmplifier 文件:220.09 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | ||
MMBT4401 | TRANSISTOR(NPN) 文件:276.7 Kbytes Page:2 Pages | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | ||
MMBT4401 | TRANSISTOR(NPN) 文件:564.16 Kbytes Page:3 Pages | BYTESONICBytesonic Electronics Co., Ltd. 松浩电子松浩电子股份有限公司 | ||
MMBT4401 | NPNSiliconEpitaxialPlanarTransistor 文件:179.56 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
MMBT4401 | SMDGeneralPurposePNPTransistors 文件:145.87 Kbytes Page:2 Pages | DiotecDiotec Semiconductor 德欧泰克 | ||
MMBT4401 | Plastic-EncapsulateTransistors 文件:286.24 Kbytes Page:1 Pages | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三联盛科技股份深圳市三联盛科技股份有限公司 | ||
MMBT4401 | NPNSwitchingTransistor 文件:399.08 Kbytes Page:4 Pages | GSMEGuilin Strong Micro-Electronics Co., Ltd. 桂微桂林斯壮桂微电子有限责任公司 | ||
MMBT4401 | NPNGeneralPurposeAmplifier 文件:189.9 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | ||
MMBT4401 | SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN) 文件:356.64 Kbytes Page:6 Pages | RECTRON Rectron Semiconductor | ||
MMBT4401 | NPNGeneralPurposeAmplifier 文件:95.52 Kbytes Page:4 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | ||
MMBT4401 | NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:90.9 Kbytes Page:4 Pages | DIODESDiodes Incorporated 美台半导体 | ||
MMBT4401 | NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR 文件:124.03 Kbytes Page:4 Pages | DIODESDiodes Incorporated 美台半导体 | ||
MMBT4401 | NPNGeneralPuposeAmplifier 文件:93.3 Kbytes Page:7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features ●EpitaxialPlanarDieConstruction ●IdealforMediumPowerAmplificationandSwitching ●ComplementaryPNPType:MMBT4403 ●TotallyLead-Free&FullyRoHScompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHig | DIODESDiodes Incorporated 美台半导体 | |||
NPNGENERALPURPOSEAMPLIFIER DESCRIPTION TheUTCMMBT4401isdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
NPNGeneralPuposeAmplifier Thisdeviceisdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
GeneralPurposeTransistor GeneralPurposeTransistor RoHSDevice Features -SwitchingTransistor | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | |||
SwitchingTransistorNPNSilicon SwitchingTransistor NPNSilicon Leadfreeproduct Halogen-freetype | ZOWIEZowie Technology Corporation 智威智威科技股份有限公司 | |||
PNPEpitaxialSiliconTransistor PNPEpitaxialSiliconTransistor SwitchingTransistor | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
SwitchingTransistor Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplications RequiringUniqueSiteandControlChangeRequirements | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SwitchingTransistorNPNSilicon Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplications RequiringUniqueSiteandControlChangeRequirements | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNGENERALPURPOSEAMPLIFIER DESCRIPTION TheUTCMMBT4401isdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
NPNEPITAXIALPLANARTRANSISTOR Description TheMMBT4401LT1isdesignedforgeneralpurposeswitchingandamplifierapplications. AbsoluteMaximumRatings •MaximumTemperatures StorageTemperature...............................................................................................-55~+150°C Jun | TGS Tiger Electronic Co.,Ltd |
MMBT4401产品属性
- 类型
描述
- 型号
MMBT4401
- 功能描述
两极晶体管 - BJT SOT-23 NPN GEN PUR
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON-SEMI |
22+ |
N/A |
3000 |
原装正品 香港现货 |
|||
onsemi(安森美) |
24+ |
SOT-723 |
6547 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON/安森美 |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON |
2016+ |
SOT23 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON |
23+ |
SOT23_3 |
20000 |
全新原装假一赔十 |
|||
DIODES |
22+23+ |
SOT23-3 |
8000 |
新到现货,只做原装进口 |
|||
DIODES/美台 |
25+ |
SOT23 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ON/安森美 |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
|||
ON/安森美 |
23+ |
SOT-23 |
8160 |
原厂原装 |
|||
ON/安森美 |
1950+ |
SOT23 |
6852 |
只做原装正品现货!或订货假一赔十! |
MMBT4401规格书下载地址
MMBT4401参数引脚图相关
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MMBT4401数据表相关新闻
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2023-2-9MMBT3906WT1G 双极晶体管 - 双极结型晶体管(BJT)
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MMBT4401CJ/长电SOT-23
2021-3-9MMBT4401LT1G
晶体管类型:NPN 电流-集电极(Ic)(最大值):600mA 电压-集射极击穿(最大值):40V 不同?Ib,Ic时的?Vce饱和值(最大值):750mV@50mA,500mA 不同?Ic,Vce?时的DC电流增益(hFE)(最小值):100@150mA,1V 功率-最大值:300mW 频率-跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC
2020-9-3MMBT3906LT1G
晶体管类型:PNP 电流-集电极(Ic)(最大值):200mA 电压-集射极击穿(最大值):40V 不同?Ib,Ic时的?Vce饱和值(最大值):400mV@5mA,50mA 不同?Ic,Vce?时的DC电流增益(hFE)(最小值):100@10mA,1V 功率-最大值:300mW 频率-跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59
2020-9-3
DdatasheetPDF页码索引
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