MMBT4401晶体管资料

  • MMBT4401别名:MMBT4401三极管、MMBT4401晶体管、MMBT4401晶体三极管

  • MMBT4401生产厂家:美国摩托罗拉半导体公司

  • MMBT4401制作材料

  • MMBT4401性质:射频/高频放大 (HF)_通用 (G)

  • MMBT4401封装形式

  • MMBT4401极限工作电压:60V

  • MMBT4401最大电流允许值:0.6A

  • MMBT4401最大工作频率:<1MHZ或未知

  • MMBT4401引脚数

  • MMBT4401最大耗散功率:0.3W

  • MMBT4401放大倍数

  • MMBT4401图片代号:NO

  • MMBT4401vtest:60

  • MMBT4401htest:999900

  • MMBT4401atest:0.6

  • MMBT4401wtest:0.3

  • MMBT4401代换 MMBT4401用什么型号代替

MMBT4401价格

参考价格:¥0.1191

型号:MMBT4401 品牌:DIODES 备注:这里有MMBT4401多少钱,2025年最近7天走势,今日出价,今日竞价,MMBT4401批发/采购报价,MMBT4401行情走势销售排行榜,MMBT4401报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MMBT4401

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(MMBT4403) •IdealforMediumPowerAmplificationandSwitching

TRSYS

Transys Electronics

TRSYS
MMBT4401

NPNGeneralPurposeAmplifier

Thisdeviceisdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MMBT4401

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ●EpitaxialPlanarDieConstruction ●IdealforMediumPowerAmplificationandSwitching ●ComplementaryPNPType:MMBT4403 ●TotallyLead-Free&FullyRoHScompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHig

DIODESDiodes Incorporated

美台半导体

DIODES
MMBT4401

SMALLSIGNALTRANSISTORS(NPN)

FEATURES ♦NPNSiliconEpitaxialPlanarTransistorforswitchingandamplifierapplications. ♦Ascomplementarytype,thePNPtransistorMMBT4403isrecommended. ♦ThistransistorisalsoavailableintheTO-92casewiththetypedesignation2N4401.

GE

GE Industrial Company

GE
MMBT4401

NPNGeneralPurposeAmplifier

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •SurfaceMountSOT-23Package •Capableof350mWattsofPowerDissipation •OperatingandStorageJunctionTemperatures:-55ćto150ć •IC=600mA •Marking:2X/M4A •LeadFreeFinish/RoHSCompliant(PSuffixdesignates R

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MMBT4401

SwitchingTransistorNPNSilicon

SwitchingTransistorNPNSilicon

WEITRON

Weitron Technology

WEITRON
MMBT4401

NPNGENERALPURPOSEAMPLIFIER

DESCRIPTION TheUTCMMBT4401isdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
MMBT4401

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

DiotecDiotec Semiconductor

德欧泰克

Diotec
MMBT4401

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.–Gewichtca.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedan

DiotecDiotec Semiconductor

德欧泰克

Diotec
MMBT4401

NPNSiliconEpitaxialPlanarTransistor

FEATURES •Epitaxialplanardieconstruction. •ComplementaryPNPtypeavailable:MMBT4403. •Idealformediumpoweramplificationandswitching. APPLICATIONS •Generalpurposeapplication,switchingapplication.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
MMBT4401

SMDGeneralPurposeTransistor(NPN)

Features •NPNSiliconEpitaxialPlanarTransistorforSwitchingandAmplifierApplications

TAITRON

TAITRON Components Incorporated

TAITRON
MMBT4401

TRANSISTOR(NPN)

FEATURES Switchingtransistor

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
MMBT4401

NPNSiliconGeneralPurposeTransistor

AscomplementarytypestheNPNtransistorMMBT4403isrecommended.

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC
MMBT4401

SWITCHINGTRANSISTORNPNSILICON

SwitchingTransistorNPNSilicon

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE
MMBT4401

NPNSiliconSwitchingTransistor

NPNSiliconSwitchingTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
MMBT4401

NPNGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE40VoltsPOWER225mWatts FEATURES •NPNepitaxialsilicon,planardesign •Collector-emittervoltageVCE=40V •CollectorcurrentIC=600mA •IncompliancewithEURoHS2002/95/ECdirectives

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
MMBT4401

Generalpurposeapplication

Descriptions •Generalpurposeapplication •Switchingapplication Features •LowLeakagecurrent •Lowcollectorsaturationvoltageenablinglowvoltageoperation •ComplementarypairwithMMBT4403

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI
MMBT4401

NPNSiliconGeneralPurposeTransistor

NPNSiliconGeneralPurposeTransistor AscomplementarytypestheNPNtransistor MMBT4403isrecommended.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MMBT4401

Amplifiers&Switches

Amplifiers&Switches Bipolar:GeneralPurpose

AMMSEMIAmerican Microsemiconductor

美国微半导体有限公司

AMMSEMI
MMBT4401

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●SwitchingTransistor

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
MMBT4401

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●SwitchingTransistor

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
MMBT4401

Plastic-EncapsulateTransistors

Plastic-EncapsulateTransistors FEATURES Switchingtransistor

MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED

美科半导体美科半导体股份(香港)有限公司

MAKOSEMI
MMBT4401

Switchingtransistor

Plastic-EncapsulateTransistors FEATURES Switchingtransistor

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

HOTTECH
MMBT4401

SiliconNPNtransistorinaSOT-23PlasticPackage

Description SiliconNPNtransistorinaSOT-23PlasticPackage. Features MoistureSensitivityLevel:1,ESDRating:HumanBodyModel;4kV,MachineModel;400V. Applications Mediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
MMBT4401

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●Epitaxialplanardieconstruction. ●ComplementaryPNPtypeavailable:MMBT4403. ●Idealformediumpoweramplificationandswitching. APPLICATIONS ●Generalpurposeapplication,switchingapplication.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
MMBT4401

NPNTransistors

■Features ●IdealforMediumPowerAmplificationandSwitching ●ComplementaryPNPTypeAvailable(MMBT4403)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
MMBT4401

NPNTransistors

■Features ●IdealforMediumPowerAmplificationandSwitching ●ComplementaryPNPTypeAvailable(MMBT4403)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
MMBT4401

WedeclarethatthematerialofproductcompliantwithRoHSrequirementsandHalogenFree.

FEATURES 1)Wedeclarethatthematerialofproductcompliantwith RoHSrequirementsandHalogenFree. 2)S-PrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC-Q101 QualifiedandPPAPCapable.

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
MMBT4401

NPNGeneral-PurposeAmplifier

Description Thisdeviceisdesignedforuseasamediumpower amplifierandswitchrequiringcollectorcurrentsupto500mA.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MMBT4401

SOT-23Plastic-EncapsulateTransistors

FEATURES SwitchingTransistor

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
MMBT4401

TRANSISTOR(NPN)

FEATURES Switchingtransistor

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI
MMBT4401

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR) 描述:TRANS NPN 40V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

MMBT4401

NPNTransistor

文件:696.39 Kbytes Page:4 Pages

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

PJSEMI
MMBT4401

NPNPlastic-EncapsulateTransistors

文件:1.06687 Mbytes Page:5 Pages

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒济南晶恒电子有限责任公司

JINGHENG
MMBT4401

封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MMBT4401

NPNGENERALPURPOSEAMPLIFIER

文件:274.05 Kbytes Page:6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
MMBT4401

SMDGeneralPurposeNPNTransistors

文件:143.95 Kbytes Page:2 Pages

DiotecDiotec Semiconductor

德欧泰克

Diotec
MMBT4401

NPNGeneralPurposeAmplifier

文件:220.09 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MMBT4401

TRANSISTOR(NPN)

文件:276.7 Kbytes Page:2 Pages

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
MMBT4401

TRANSISTOR(NPN)

文件:564.16 Kbytes Page:3 Pages

BYTESONICBytesonic Electronics Co., Ltd.

松浩电子松浩电子股份有限公司

BYTESONIC
MMBT4401

NPNSiliconEpitaxialPlanarTransistor

文件:179.56 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
MMBT4401

SMDGeneralPurposePNPTransistors

文件:145.87 Kbytes Page:2 Pages

DiotecDiotec Semiconductor

德欧泰克

Diotec
MMBT4401

Plastic-EncapsulateTransistors

文件:286.24 Kbytes Page:1 Pages

SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD.

三联盛科技股份深圳市三联盛科技股份有限公司

SHENZHENSLS
MMBT4401

NPNSwitchingTransistor

文件:399.08 Kbytes Page:4 Pages

GSMEGuilin Strong Micro-Electronics Co., Ltd.

桂微桂林斯壮桂微电子有限责任公司

GSME
MMBT4401

NPNGeneralPurposeAmplifier

文件:189.9 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MMBT4401

SOT-23BIPOLARTRANSISTORSTRANSISTOR(NPN)

文件:356.64 Kbytes Page:6 Pages

RECTRON

Rectron Semiconductor

RECTRON
MMBT4401

NPNGeneralPurposeAmplifier

文件:95.52 Kbytes Page:4 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MMBT4401

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

文件:90.9 Kbytes Page:4 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MMBT4401

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

文件:124.03 Kbytes Page:4 Pages

DIODESDiodes Incorporated

美台半导体

DIODES
MMBT4401

NPNGeneralPuposeAmplifier

文件:93.3 Kbytes Page:7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ●EpitaxialPlanarDieConstruction ●IdealforMediumPowerAmplificationandSwitching ●ComplementaryPNPType:MMBT4403 ●TotallyLead-Free&FullyRoHScompliant(Notes1&2) ●HalogenandAntimonyFree.“Green”Device(Note3) ●QualifiedtoAEC-Q101StandardsforHig

DIODESDiodes Incorporated

美台半导体

DIODES

NPNGENERALPURPOSEAMPLIFIER

DESCRIPTION TheUTCMMBT4401isdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNGeneralPuposeAmplifier

Thisdeviceisdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

GeneralPurposeTransistor

GeneralPurposeTransistor RoHSDevice Features -SwitchingTransistor

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

SwitchingTransistorNPNSilicon

SwitchingTransistor NPNSilicon Leadfreeproduct Halogen-freetype

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

ZOWIE

PNPEpitaxialSiliconTransistor

PNPEpitaxialSiliconTransistor SwitchingTransistor

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SwitchingTransistor

Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplications RequiringUniqueSiteandControlChangeRequirements

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SwitchingTransistorNPNSilicon

Features •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant •AEC−Q101QualifiedandPPAPCapable •SPrefixforAutomotiveandOtherApplications RequiringUniqueSiteandControlChangeRequirements

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNGENERALPURPOSEAMPLIFIER

DESCRIPTION TheUTCMMBT4401isdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPNEPITAXIALPLANARTRANSISTOR

Description TheMMBT4401LT1isdesignedforgeneralpurposeswitchingandamplifierapplications. AbsoluteMaximumRatings •MaximumTemperatures StorageTemperature...............................................................................................-55~+150°C Jun

TGS

Tiger Electronic Co.,Ltd

TGS

MMBT4401产品属性

  • 类型

    描述

  • 型号

    MMBT4401

  • 功能描述

    两极晶体管 - BJT SOT-23 NPN GEN PUR

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-7-23 23:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON-SEMI
22+
N/A
3000
原装正品 香港现货
onsemi(安森美)
24+
SOT-723
6547
原厂订货渠道,支持BOM配单一站式服务
ON/安森美
24+
NA/
3000
优势代理渠道,原装正品,可全系列订货开增值税票
ON
2016+
SOT23
9000
只做原装,假一罚十,公司可开17%增值税发票!
ON
23+
SOT23_3
20000
全新原装假一赔十
DIODES
22+23+
SOT23-3
8000
新到现货,只做原装进口
DIODES/美台
25+
SOT23
54648
百分百原装现货 实单必成 欢迎询价
ON/安森美
22+
SOT-23
100000
代理渠道/只做原装/可含税
ON/安森美
23+
SOT-23
8160
原厂原装
ON/安森美
1950+
SOT23
6852
只做原装正品现货!或订货假一赔十!

MMBT4401芯片相关品牌

  • AMPHENOL
  • CK-COMPONENTS
  • DDK
  • GLENAIR
  • MACOM
  • Mitsubishi
  • MOLEX6
  • Panasonic
  • POWERDYNAMICS
  • RHOMBUS-IND
  • TELEDYNE
  • YAMAICHI

MMBT4401数据表相关新闻