MMBT4401晶体管资料
MMBT4401别名：MMBT4401三极管、MMBT4401晶体管、MMBT4401晶体三极管
MMBT4401生产厂家：美国摩托罗拉半导体公司
MMBT4401制作材料：
MMBT4401性质：射频/高频放大 （HF）_通用 （G）
MMBT4401封装形式：
MMBT4401极限工作电压：60V
MMBT4401最大电流允许值：0.6A
MMBT4401最大工作频率：<1MHZ或未知
MMBT4401引脚数：
MMBT4401最大耗散功率：0.3W
MMBT4401放大倍数：
MMBT4401图片代号：NO
MMBT4401vtest：60
MMBT4401htest：999900
- MMBT4401atest：0.6
MMBT4401wtest：0.3
MMBT4401代换 MMBT4401用什么型号代替：
MMBT4401价格
参考价格：￥0.1191
型号：MMBT4401 品牌：DIODES 备注：这里有MMBT4401多少钱，2026年最近7天走势，今日出价，今日竞价，MMBT4401批发/采购报价，MMBT4401行情走势销售排行榜，MMBT4401报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBT4401 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary PNP Type Available (MMBT4403) • Ideal for Medium Power Amplification and Switching | TRSYS Transys Electronics |   | |
MMBT4401 | 丝印代码：2X；NPN General Purpose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | FAIRCHILD 仙童半导体 | | |
MMBT4401 | SWITCHING TRANSISTOR NPN SILICON Switching Transistor NPN Silicon | ZOWIE 智威 | | |
MMBT4401 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features ● Epitaxial Planar Die Construction ● Ideal for Medium Power Amplification and Switching ● Complementary PNP Type: MMBT4403 ● Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | | |
MMBT4401 | SMALL SIGNAL TRANSISTORS (NPN) FEATURES ♦ NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. ♦ As complementary type, the PNP transistor MMBT4403 is recommended. ♦ This transistor is also available in the TO-92 case with the type designation 2N4401. | GE | | |
MMBT4401 | NPN General Purpose Amplifier Features • Halogen free available upon request by adding suffix -HF • Surface Mount SOT-23 Package • Capable of 350mWatts of Power Dissipation • Operating and Storage Junction Temperatures: -55ć to 150ć • IC=600mA • Marking:2X/M4A • Lead Free Finish/RoHS Compliant (P Suffix designates R | MCC | | |
MMBT4401 | Switching Transistor NPN Silicon Switching Transistor NPN Silicon | WEITRON | | |
MMBT4401 | NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. | UTC 友顺 | | |
MMBT4401 | Surface Mount General Purpose Si-Epi-Planar Transistors Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled | DIOTEC 德欧泰克 | | |
MMBT4401 | Surface Mount General Purpose Si-Epi-Planar Transistors Surface Mount General Purpose Si-Epi-Planar Transistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. – Gewicht ca. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped an | DIOTEC 德欧泰克 | | |
MMBT4401 | 丝印代码：2X；NPN Silicon Epitaxial Planar Transistor FEATURES • Epitaxial planar die construction. • Complementary PNP type available: MMBT4403. • Ideal for medium power amplification and switching. APPLICATIONS • General purpose application, switching application. | BILIN 银河微电 | | |
MMBT4401 | SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications | TAITRON | | |
MMBT4401 | TRANSISTOR(NPN) FEATURES Switching transistor | HTSEMI 金誉半导体 | | |
MMBT4401 | NPN Silicon General Purpose Transistor As complementary types the NPN transistor MMBT4403 is recommended. | SEMTECH_ELEC 先之科半导体 | | |
MMBT4401 | NPN Silicon Switching Transistor NPN Silicon Switching Transistor | SECOS 喜可士 | | |
MMBT4401 | 丝印代码：M4A；NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 225 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • In compliance with EU RoHS 2002/95/EC directives | PANJIT 強茂 | | |
MMBT4401 | NPN Silicon General Purpose Transistor NPN Silicon General Purpose Transistor As complementary types the NPN transistor MMBT4403 is recommended. | DGNJDZ 南晶电子 | | |
MMBT4401 | Amplifiers & Switches Amplifiers & Switches Bipolar: General Purpose | AMMSEMI | | |
MMBT4401 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NPN ) Features ● Switching Transistor | HDSEMI 海德半导体 | | |
MMBT4401 | SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Switching Transistor | JIANGSU 长电科技 | | |
MMBT4401 | General purpose application Descriptions • General purpose application • Switching application Features • Low Leakage current • Low collector saturation voltage enabling low voltage operation • Complementary pair with MMBT4403 | KODENSHI 可天士 | | |
MMBT4401 | 丝印代码：2X；NPN Transistors ■ Features ● Ideal for Medium Power Amplification and Switching ● Complementary PNP Type Available (MMBT4403) | KEXIN 科信电子 | | |
MMBT4401 | Silicon NPN transistor in a SOT-23 Plastic Package Description Silicon NPN transistor in a SOT-23 Plastic Package. Features Moisture Sensitivity Level: 1, ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V. Applications Medium power amplifier and switch requiring collector currents up to 500 mA. | FOSHAN 蓝箭电子 | | |
MMBT4401 | Plastic-Encapsulate Transistors Plastic-Encapsulate Transistors FEATURES Switching transistor | MAKOSEMI 美科半导体 | | |
MMBT4401 | Switching transistor Plastic-Encapsulate Transistors FEATURES Switching transistor | HOTTECH 合科泰 | | |
MMBT4401 | 丝印代码：2X；NPN Silicon Epitaxial Planar Transistor FEATURES ● Epitaxial planar die construction. ● Complementary PNP type available: MMBT4403. ● Ideal for medium power amplification and switching. APPLICATIONS ● General purpose application, switching application. | LUGUANG 鲁光电子 | | |
MMBT4401 | 丝印代码：2X；NPN Transistors ■ Features ● Ideal for Medium Power Amplification and Switching ● Complementary PNP Type Available (MMBT4403) | YFWDIODE 佑风微 | | |
MMBT4401 | 丝印代码：2X；We declare that the material of product compliant with RoHS requirements and Halogen Free. FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. | LEIDITECH 雷卯电子 | | |
MMBT4401 | 丝印代码：2X；NPN General-Purpose Amplifier Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | ONSEMI 安森美半导体 | | |
MMBT4401 | SOT-23 Plastic-Encapsulate Transistors FEATURES Switching Transistor | UMW 友台半导体 | | |
MMBT4401 | 丝印代码：2X；TRANSISTOR(NPN) FEATURES Switching transistor | GWSEMI 唯圣电子 | | |
MMBT4401 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 40V 0.6A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | |
MMBT4401 | Transistor | GoalTop | | |
MMBT4401 | 通用型双极晶体管 | PANJIT 強茂 | | |
MMBT4401 | NPN, 40V, 0.6A, SOT23 | DIODES 美台半导体 | | |
MMBT4401 | 丝印代码：2X；NPN Plastic-Encapsulate Transistors 文件：1.06687 Mbytes Page：5 Pages | JINGHENG 晶恒 | | |
MMBT4401 | 丝印代码：2X；NPN Transistor 文件：696.39 Kbytes Page：4 Pages | PJSEMI 平晶半导体 | | |
MMBT4401 | 丝印代码：2X；NPN Silicon Epitaxial Planar Transistor 文件：179.56 Kbytes Page：4 Pages | BILIN 银河微电 | | |
MMBT4401 | 封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MMBT4401 | SMD General Purpose NPN Transistors 文件：143.95 Kbytes Page：2 Pages | DIOTEC 德欧泰克 | | |
MMBT4401 | NPN General Purpose Amplifier 文件：220.09 Kbytes Page：4 Pages | MCC | | |
MMBT4401 | 丝印代码：2X；TRANSISTOR ( NPN) 文件：276.7 Kbytes Page：2 Pages | KOOCHIN 灏展电子 | | |
MMBT4401 | 丝印代码：2X；TRANSISTOR ( NPN) 文件：564.16 Kbytes Page：3 Pages | BYTESONIC 松浩电子 | | |
MMBT4401 | NPN GENERAL PURPOSE AMPLIFIER 文件：274.05 Kbytes Page：6 Pages | UTC 友顺 | | |
MMBT4401 | NPN Switching Transistor 文件：399.08 Kbytes Page：4 Pages | GSME 桂微 | | |
MMBT4401 | SMD General Purpose PNP Transistors 文件：145.87 Kbytes Page：2 Pages | DIOTEC 德欧泰克 | | |
MMBT4401 | 丝印代码：2X；Plastic-Encapsulate Transistors 文件：286.24 Kbytes Page：1 Pages | SHENZHENSLS 三联盛 | | |
MMBT4401 | NPN General Purpose Amplifier 文件：189.9 Kbytes Page：4 Pages | MCC | | |
MMBT4401 | SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 文件：356.64 Kbytes Page：6 Pages | RECTRON 丽正 | | |
MMBT4401 | NPN General Purpose Amplifier 文件：95.52 Kbytes Page：4 Pages | MCC | | |
MMBT4401 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：90.9 Kbytes Page：4 Pages | DIODES 美台半导体 | | |
MMBT4401 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR 文件：124.03 Kbytes Page：4 Pages | DIODES 美台半导体 | | |
MMBT4401 | 丝印代码：2X；NPN General Pupose Amplifier 文件：93.3 Kbytes Page：7 Pages | FAIRCHILD 仙童半导体 | | |
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features ● Epitaxial Planar Die Construction ● Ideal for Medium Power Amplification and Switching ● Complementary PNP Type: MMBT4403 ● Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) ● Halogen and Antimony Free. “Green” Device (Note 3) ● Qualified to AEC-Q101 Standards for Hig | DIODES 美台半导体 | | ||
NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. | UTC 友顺 | | ||
NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. | FAIRCHILD 仙童半导体 | | ||
General Purpose Transistor General Purpose Transistor RoHS Device Features - Switching Transistor | COMCHIP 典琦 | | ||
Switching Transistor NPN Silicon Switching Transistor NPN Silicon Lead free product Halogen-free type | ZOWIE 智威 | | ||
PNP Epitaxial Silicon Transistor PNP Epitaxial Silicon Transistor Switching Transistor | FAIRCHILD 仙童半导体 | | ||
Switching Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | |
MMBT4401产品属性
- 类型
描述
- Compliance：
Pb-freeHalide free
- Status：
Active
- Description：
NPN General Purpose Amplifier
- Polarity：
NPN
- Type：
General Purpose
- VCE(sat) Max (V)：
Condition
- IC Cont. (A)：
0.6
- VCEO Min (V)：
40
- VCBO (V)：
60
- VEBO (V)：
6
- VBE(sat) (V)：
Condition
- hFE Min：
Condition
- hFE Max：
Condition
- fT Min (MHz)：
250
- PTM Max (W)：
0.35
- Package Type：
SOT-23-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
2411+ |
SOT-23 |
150000 |
原装正品，欢迎询价 |
|||
ST/ON |
23+ |
SOT-23 |
24190 |
原装正品代理渠道价格优势 |
|||
ON(安森美) |
2447 |
SOT-23(SOT-23-3) |
315000 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NS |
23+ |
SOT23 |
50000 |
全新原装正品现货,支持订货 |
|||
FAIRCHIL |
25+ |
SOT23-3 |
2568 |
原装优势!绝对公司现货 |
|||
ON |
22+ |
3000 |
ON代理分销,价格优势现货假一罚十 |
||||
Fairchild |
24+ |
NA |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
FAIRCHILD |
25+ |
SOT23 |
90000 |
一级代理商进口原装现货、假一罚十价格合理 |
|||
TAITRON |
05+ |
原厂原装 |
3051 |
只做全新原装真实现货供应 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
MMBT4401规格书下载地址
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晶体管类型：PNP 电流 - 集电极（Ic）（最大值）：200mA 电压 - 集射极击穿（最大值）：40V 不同?Ib，Ic 时的?Vce 饱和值（最大值）：400mV @ 5mA，50mA 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）：100 @ 10mA，1V 功率 - 最大值：300mW 频率 - 跃迁：250MHz 安装类型：表面贴装 封装/外壳：TO-236-3，SC-59
2020-9-3
DdatasheetPDF页码索引
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