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MMBT4401L价格
参考价格：￥0.0451
型号：MMBT4401LT1G 品牌：ONSemi 备注：这里有MMBT4401L多少钱，2025年最近7天走势，今日出价，今日竞价，MMBT4401L批发/采购报价，MMBT4401L行情走势销售排行榜，MMBT4401L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MMBT4401L | Switching Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 |   | |
MMBT4401L | Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | | |
MMBT4401L | 40 V, 600 mA NPN Bipolar Junction Transistor | ONSEMI 安森美半导体 | | |
NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. | UTC 友顺 | | ||
General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. | WILLAS 威伦电子 | | ||
Switching Transistor Switching Transistor NPN Silicon | Motorola 摩托罗拉 | | ||
Switching Transistor(NPN Silicon) Switching Transistor NPN Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | | ||
General Purpose Transistor(NPN Silicon) General Purpose Transistors NPN Silicon | LRC 乐山无线电 | | ||
NPN EPITAXIAL PLANAR TRANSISTOR Description The MMBT4401LT1 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature............................................................................................... -55~+150°C Jun | TGS | | ||
SOT-23 Plastic-Encapsulate Transistors FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | AVICTEK | | ||
TRANSISTOR (NPN) Features • Power dissipation PCM : 0.225 W (Tamb=25°C) • Pluse Drain ICM : 0.6 mA • Reverse Voltage V(BR)CBO : 60V • Operating and storage junction temperature range Tj , Tstg : -55 C to +150 C | WINNERJOIN 永而佳 | | ||
Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | | ||
Switching Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | | ||
Switching Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | | ||
Switching Transistor(NPN Silicon) Switching Transistor NPN Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | | ||
Switching Transistor(NPN Silicon) Switching Transistor NPN Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | | ||
Switching Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | | ||
Switching Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | | ||
Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | | ||
NPN GENERAL PURPOSE AMPLIFIER 文件：274.05 Kbytes Page：6 Pages | UTC 友顺 | | ||
NPN GENERAL PURPOSE AMPLIFIER 文件：274.05 Kbytes Page：6 Pages | UTC 友顺 | | ||
贴片晶体管 | DGNJDZ 南晶电子 | | ||
Switching Transistors | un-semi 友恩半导体 | | ||
NPN TRANSISTOR 文件：153.69 Kbytes Page：2 Pages | WINNERJOIN 永而佳 | | ||
Switching Transistor 文件：153.57 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • Complimentary (PNP) device:2N4403 • Pb free product are available :99 Sn above can meet RoHS environment substance directive | PANJIT 強茂 | | ||
DO-41 Case
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
General Purpose Transistors General Purpose Transistors NPN Silicon | ONSEMI 安森美半导体 | | ||
NPN General Purpose Amplifier 文件：218.45 Kbytes Page：4 Pages | MCC | | ||
TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 文件：442.97 Kbytes Page：6 Pages | RECTRON 丽正国际 | |
MMBT4401L产品属性
- 类型
描述
- 型号
MMBT4401L
- 制造商
Motorola
- 功能描述
4401 MOT N12J6G
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
SOT-23 |
8000 |
原装正品现货假一罚十 |
|||
ON |
22+ |
3000 |
ON代理分销,价格优势现货假一罚十 |
||||
onsemi |
21+ |
SOT-23-3 |
9855571 |
电子元器件一站式配单服务 |
|||
ON |
21+ |
SOT-23 |
30000 |
全新原装公司现货
|
|||
ON |
24+ |
SOT-23 |
36000 |
||||
ON |
23+ |
SOT-23 |
693000 |
一级分销商 |
|||
ON/安森美 |
24+ |
SOT-23 |
33524 |
原装正品,现货库存,1小时内发货 |
|||
ON |
23+ |
SOT-23 |
23510 |
公司优势库存热卖全新原装!欢迎来电 |
|||
ON |
15 |
SOT-23 |
6000 |
原装正品现货 |
|||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
MMBT4401L规格书下载地址
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MMBT4401L数据表相关新闻
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晶体管类型：NPN 电流 - 集电极（Ic）（最大值）：600mA 电压 - 集射极击穿（最大值）：40V 不同?Ib，Ic 时的?Vce 饱和值（最大值）：750mV @ 50mA，500mA 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）：100 @ 150mA，1V 功率 - 最大值：300mW 频率 - 跃迁：250MHz 安装类型：表面贴装 封装/外壳：TO-236-3，SC
2020-9-3
DdatasheetPDF页码索引
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