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MMBT4401L价格
参考价格:¥0.0451
型号:MMBT4401LT1G 品牌:ONSemi 备注:这里有MMBT4401L多少钱,2025年最近7天走势,今日出价,今日竞价,MMBT4401L批发/采购报价,MMBT4401L行情走势销售排行榜,MMBT4401L报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
MMBT4401L | Switching Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | ||
MMBT4401L | Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | ||
MMBT4401L | 40 V, 600 mA NPN Bipolar Junction Transistor | ONSEMI 安森美半导体 | ||
NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC MMBT4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. | UTC 友顺 | |||
General Purpose Transistor(NPN Silicon) General Purpose Transistors NPN Silicon | LRC 乐山无线电 | |||
Switching Transistor(NPN Silicon) Switching Transistor NPN Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | |||
Switching Transistor Switching Transistor NPN Silicon | Motorola 摩托罗拉 | |||
SOT-23 Plastic-Encapsulate Transistors FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | AVICTEK | |||
NPN EPITAXIAL PLANAR TRANSISTOR Description The MMBT4401LT1 is designed for general purpose switching and amplifier applications. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature............................................................................................... -55~+150°C Jun | TGS | |||
TRANSISTOR (NPN) Features • Power dissipation PCM : 0.225 W (Tamb=25°C) • Pluse Drain ICM : 0.6 mA • Reverse Voltage V(BR)CBO : 60V • Operating and storage junction temperature range Tj , Tstg : -55 C to +150 C | WINNERJOIN 永而佳 | |||
General Purpose Transistor • We declare that the material of product compliance with RoHS requirements. | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | |||
Switching Transistor(NPN Silicon) Switching Transistor NPN Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | |||
Switching Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | |||
Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | |||
Switching Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | |||
Switching Transistor(NPN Silicon) Switching Transistor NPN Silicon Features • Pb−Free Package is Available | ONSEMI 安森美半导体 | |||
Switching Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | |||
Switching Transistor Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | |||
Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements | ONSEMI 安森美半导体 | |||
NPN GENERAL PURPOSE AMPLIFIER 文件:274.05 Kbytes Page:6 Pages | UTC 友顺 | |||
NPN GENERAL PURPOSE AMPLIFIER 文件:274.05 Kbytes Page:6 Pages | UTC 友顺 | |||
贴片晶体管 | DGNJDZ 南晶电子 | |||
Switching Transistors | un-semi 友恩半导体 | |||
NPN TRANSISTOR 文件:153.69 Kbytes Page:2 Pages | WINNERJOIN 永而佳 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
Switching Transistor 文件:153.57 Kbytes Page:7 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-236-3,SC-59,SOT-23-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 40V 0.6A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
DO-41 Case
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 625 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • Complimentary (PNP) device:2N4403 • Pb free product are available :99 Sn above can meet RoHS environment substance directive | PANJIT 強茂 | |||
General Purpose Transistors General Purpose Transistors NPN Silicon | ONSEMI 安森美半导体 | |||
NPN General Purpose Amplifier 文件:218.45 Kbytes Page:4 Pages | MCC | |||
TO - 92 BIPOLAR TRANSISTORS TRANSISTOR(NPN) 文件:442.97 Kbytes Page:6 Pages | RECTRON 丽正国际 |
MMBT4401L产品属性
- 类型
描述
- 型号
MMBT4401L
- 制造商
Motorola
- 功能描述
4401 MOT N12J6G
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SOT-23 |
33524 |
原装正品,现货库存,1小时内发货 |
|||
ON |
2016+ |
SOT23-3 |
12000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
23+ |
SOT-23 |
819526 |
专注原装正品现货特价中量大可定 |
||||
50 |
23 |
VISHAY/威世 |
14 |
92 |
|||
ON |
19+ |
SOT23 |
970 |
原装现货 实单可谈 |
|||
ON Semiconductor Corporation |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
onsemi |
21+ |
SOT-23-3 |
9855571 |
电子元器件一站式配单服务 |
|||
ON(安森美) |
24+ |
SOT-23(SOT-23-3) |
7139 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON/安森美 |
22+ |
SOT-23 |
8000 |
原装正品现货假一罚十 |
|||
ON/安森美 |
21+ |
SOT23-3 |
8080 |
只做原装,质量保证 |
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晶体管类型:NPN 电流 - 集电极(Ic)(最大值):600mA 电压 - 集射极击穿(最大值):40V 不同?Ib,Ic 时的?Vce 饱和值(最大值):750mV @ 50mA,500mA 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):100 @ 150mA,1V 功率 - 最大值:300mW 频率 - 跃迁:250MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC
2020-9-3
DdatasheetPDF页码索引
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