MJF127晶体管资料
MJF127别名：MJF127三极管、MJF127晶体管、MJF127晶体三极管
MJF127生产厂家：
MJF127制作材料：Si-P+Darl+Di
MJF127性质：功率放大 （L）
MJF127封装形式：直插封装
MJF127极限工作电压：100V
MJF127最大电流允许值：5A
MJF127最大工作频率：<1MHZ或未知
MJF127引脚数：3
MJF127最大耗散功率：30W
MJF127放大倍数：β>2000
MJF127图片代号：B-10
MJF127vtest：100
MJF127htest：999900
- MJF127atest：5
MJF127wtest：30
MJF127代换 MJF127用什么型号代替：2SA1718,2SB1089,2SB1194,2SD1430,
MJF127价格
参考价格：￥2.5104
型号：MJF127G 品牌：ONSemi 备注：这里有MJF127多少钱，2026年最近7天走势，今日出价，今日竞价，MJF127批发/采购报价，MJF127行情走势销售排行榜，MJF127报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJF127 | COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W Complementary Power Darlingtons For Isolated Package Applications Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. Features • Electrically Similar to the Popula | ONSEMI 安森美半导体 |   | |
MJF127 | Complementary Power Darlingtons Designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. Features • Electrically Similar to thePopular TIP122 and TIP127 • 100 VCE(sus) • 5.0A Rated Collector Current | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MJF127 | Complementary Power Darlingtons For Isolated Package Applications Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. Features Electrically Similar to the Popular TIP122 and TIP127 100 VCEO(sus) 5.0 A Rated Collector Current | ONSEMI 安森美半导体 | | |
MJF127 | COMPLEMENTARY SILICON POWER DARLINGTONS Complementary Power Darlingtons For Isolated Package Applications Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • Electrically Similar to the Popular TIP122 and T | MOTOROLA 摩托罗拉 | | |
MJF127 | Silicon PNP Darlington Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)= -3.5V(Max) @IC= -5A, IB= -20mA APPLICATIONS · Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | |
MJF127 | 5.0 A，100 V，PNP 达林顿双极功率晶体管 The Darlington Bipolar Power Transistor is designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heat sink or chassis. • Electrically Similar to the Popular TIP122 and TIP127\n• 100 VCEO(sus)\n• 5 A Rated Collector Current\n• No Isolating Washers Required\n• Reduced System Cost\n• High DC Current Gain2000 (Min) @ IC = 3 Adc\n• UL Recognized, File #E69369, to 3500 VRMS Isolation\n• Pb-Free Packages are Available; | ONSEMI 安森美半导体 | | |
MJF127 | Trans Darlington PNP 100V 5A 3-Pin(3+Tab) TO-220 Full-Pak Rail | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MJF127 | 封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS PNP DARL 100V 5A TO220FP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W Complementary Power Darlingtons For Isolated Package Applications Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. Features • Electrically Similar to the Popula | ONSEMI 安森美半导体 | | ||
Complementary Power Darlingtons For Isolated Package Applications Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. Features Electrically Similar to the Popular TIP122 and TIP127 100 VCEO(sus) 5.0 A Rated Collector Current | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS PNP DARL 100V 5A TO220FP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
PLASTIC SILICON RECTIFIER(VOLTAGE - 1250 to 1600 Volts CURRENT - 1.0 Ampere) PLASTIC SILICON RECTIFIERS VOLTAGE 1250 to 1600 Volts CURRENT 1.0 Ampere FEATURES • Low forward voltage drop • High current capability • High reliability • High surge current capability • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002 | PANJIT 強茂 | | ||
Complementary Darlington Power Transistors Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127 | ONSEMI 安森美半导体 | | ||
Germanium PNP Transistor Horizontal Output Amplifier Germanium PNP Transistor Horizontal Output Amplifier | NTE | | ||
DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12 | MOTOROLA 摩托罗拉 | | ||
Silicon epitaxial planar type 文件：49.21 Kbytes Page：2 Pages | PANASONIC 松下 | |
MJF127产品属性
- 类型
描述
- Pb-free：
Pb
- Status：
Active
- Polarity：
PNP
- IC Continuous (A)：
5
- V(BR)CEO Min (V)：
100
- VCE(sat) Max (V)：
2
- hFE Min (k)：
2
- Package Type：
TO-220-3 FullPak
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-220F |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ONSEMI |
25+ |
N/A |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
MOT |
24+ |
19250 |
|||||
ON/安森美 |
TO-220 |
23+ |
6000 |
专业配单原装正品假一罚十 |
|||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
MOTOROLA/摩托罗拉 |
23+ |
TO-220F |
24190 |
原装正品代理渠道价格优势 |
|||
ON/ |
24+ |
TO220F |
5000 |
全新原装正品,现货销售 |
|||
MOTOROLA |
26+ |
SOT-223 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
MJF127规格书下载地址
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DdatasheetPDF页码索引
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