General Purpose and Switching Applications

General Purpose and Switching Applications • DC Current Gain Specified to IC= 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.)

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

TO-220-3L Plastic-Encapsulate Transistors

FEATURES General Purpose and Switching Applications

Complementary Silicon power transistors (10A / 60V / 75W)

DESCRIPTION The MJE3055A is a silicon epitaxial-base planar NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP type is MJE2955A. FEATURES ● Designed for general-purpose switching and amplifier applications.

General Purpose Transistor

Features - General Purpose and Switching Application

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier andswitching applications. Pinning 1 = Base 2 = Collector 3 = Emitter

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE= 20–70 @ IC= -4 Adc ·Collector–emitter saturation voltage - VCE(sat)= -1.1 Vdc (Max) @ IC=- 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS ...designed for usein general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 75 W © Tc = 25°C * DC Current Gain hFE = 20- 100 © lc = 4.0 A * vCE(isrt) = 1-1 V (Max.) © lc = 4.0 A, IB= 400 mA

Silicon PNP Power Transistors MJE2955T

DESCRIPTION ·With TO-220 package ·Complement to type MJE3055T ·DC current gain -hFE= 20–70 @ IC=-4 Adc ·Collector–emitter saturation voltage - VCE(sat)= -1.1 Vdc (Max) @ IC=- 4 Adc APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARY SILICON POWER TRANSISTORS.

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc

COMPLEMENTARY SILICON POWER TRANSISTORS

Power Transistors

General Purpose and Switching Applications

General Purpose and Switching Applications • DC Current Gain Specified to IC= 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.)

Complementary Silicon Plastic Power Transistors

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE2955Tis designed for general purpose of amplifier and switching applications.

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES

COMPLEMENTARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

SILICON EPITAXIAL PLANAR TRANSISTOR

GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose

COMPLEMENTARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

Complementary Silicon Plastic Power Transistors

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS With excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator Applications

PNP Silicon Plastic-Encapsulate Transistor

文件：252.97 Kbytes Page：2 Pages

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

文件：213.09 Kbytes Page：2 Pages

TO-220-3L Plastic-Encapsulate Transistors

文件：1.42493 Mbytes Page：3 Pages

晶体管

High Voltage Power Transistors

文件：66.32 Kbytes Page：4 Pages

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

TO-220 - Power Transistors and Darlingtons

Silicon PNP transistor in a TO-220 Plastic Package.

文件：882.29 Kbytes Page：6 Pages

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 60V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

文件：94.24 Kbytes Page：3 Pages

TO-220 - Power Transistors and Darlingtons

文件：76.15 Kbytes Page：3 Pages

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

文件：213.09 Kbytes Page：2 Pages

HIGH VOLTAGE TRANSISTOR

文件：161.9 Kbytes Page：4 Pages

HIGH VOLTAGE TRANSISTOR

文件：161.9 Kbytes Page：4 Pages

HIGH VOLTAGE TRANSISTOR

文件：168.92 Kbytes Page：4 Pages

High Voltage Power Transistors

文件：66.32 Kbytes Page：4 Pages

HIGH VOLTAGE TRANSISTOR

文件：161.9 Kbytes Page：4 Pages

HIGH VOLTAGE TRANSISTOR

文件：168.92 Kbytes Page：4 Pages

HIGH VOLTAGE TRANSISTOR

文件：161.9 Kbytes Page：4 Pages

HIGH VOLTAGE TRANSISTOR

文件：168.92 Kbytes Page：4 Pages

HIGH VOLTAGE TRANSISTOR

文件：161.9 Kbytes Page：4 Pages

HIGH VOLTAGE TRANSISTOR

文件：168.92 Kbytes Page：4 Pages

HIGH VOLTAGE TRANSISTOR

文件：161.9 Kbytes Page：4 Pages

HIGH VOLTAGE TRANSISTOR

文件：168.92 Kbytes Page：4 Pages

Customer Specification

Construction 1) Component 1 1 X 1 BUSBAR a) Conductor 16 (SOLID) AWG Tinned Copper 0.051

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes Page：60 Pages

#10-32 x 5/8 LG, TRUSS HD, SCREW #10-32 NUT RETAINER

文件：28.06 Kbytes Page：1 Pages

Commercial 24mm Diameter Composition Element Long Life Variable Resistor

文件：581.83 Kbytes Page：2 Pages

SMD AIR WOUND COIL SPECIFICATION

文件：454.23 Kbytes Page：3 Pages