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MJE271G价格
参考价格:¥1.2443
型号:MJE271G 品牌:ON 备注:这里有MJE271G多少钱,2026年最近7天走势,今日出价,今日竞价,MJE271G批发/采购报价,MJE271G行情走势销售排行榜,MJE271G报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE271G | 2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | ||
MJE271G | Complementary Silicon Power Transistors Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 | ||
MJE271G | Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant | ONSEMI 安森美半导体 | ||
MJE271G | 封装/外壳:TO-225AA,TO-126-3 包装:托盘 描述:TRANS PNP DARL 100V 2A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | ||
2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 • Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC | MOTOROLA 摩托罗拉 | |||
Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Features: • High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V • Collec | NTE | |||
PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption appl | STMICROELECTRONICS 意法半导体 | |||
PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption appl | STMICROELECTRONICS 意法半导体 | |||
PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS DESCRIPTION The TS271 is a low cost, low power single opertional amplifier designed to operate with single or dual supplies. This operational amplifier uses the ST silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption appl | STMICROELECTRONICS 意法半导体 |
MJE271G产品属性
- 类型
描述
- 型号
MJE271G
- 功能描述
两极晶体管 - BJT 2A 100V Bipolar Power PNP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TO-126 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi |
25+ |
TO-126 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON/安森美 |
24+ |
TSSOP |
10000 |
原装进口只做订货 寻找优势渠道合作 |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
ON |
23+ |
TO-225 |
56000 |
||||
ON |
24+/25+ |
24980 |
原装正品现货库存价优 |
||||
ON/安森美 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON |
25+23+ |
TO-225 |
17591 |
绝对原装正品全新进口深圳现货 |
|||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
ON/安森美 |
NA |
275000 |
一级代理原装正品,价格优势,长期供应! |
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MJE271G数据表相关新闻
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DdatasheetPDF页码索引
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