MJE271晶体管资料

  • MJE271别名:MJE271三极管、MJE271晶体管、MJE271晶体三极管

  • MJE271生产厂家

  • MJE271制作材料:Si-P+Darl

  • MJE271性质

  • MJE271封装形式:直插封装

  • MJE271极限工作电压:100V

  • MJE271最大电流允许值:2A

  • MJE271最大工作频率:>6MHZ

  • MJE271引脚数:3

  • MJE271最大耗散功率:15W

  • MJE271放大倍数:β>1500

  • MJE271图片代号:B-21

  • MJE271vtest:100

  • MJE271htest:6000100

  • MJE271atest:2

  • MJE271wtest:15

  • MJE271代换 MJE271用什么型号代替:BDT60B...C,BDW54C...D,2SD751B,

MJE271价格

参考价格:¥1.2443

型号:MJE271G 品牌:ON 备注:这里有MJE271多少钱,2025年最近7天走势,今日出价,今日竞价,MJE271批发/采购报价,MJE271行情走势销售排行榜,MJE271报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJE271

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 • Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC

Motorola

摩托罗拉

MJE271

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • Pb−Free Packages are Available*

ONSEMI

安森美半导体

MJE271

NPN PLASTIC POWER TRANSISTOR

MJE270 NPN PLASTIC POWER TRANSISTOR MJE271 PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications

TEL

东电电子

MJE271

PLASTIC POWER TRANSISTOR

文件:526.1 Kbytes Page:3 Pages

CDIL

MJE271

封装/外壳:TO-225AA,TO-126-3 包装:托盘 描述:TRANS PNP DARL 100V 2A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

MJE271

2.0 A,100 V,PNP 达林顿双极功率晶体管

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • Pb−Free Packages are Available*

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:托盘 描述:TRANS PNP DARL 100V 2A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

PRODUCTWELL

POWER INDUCTOR

●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc

AITSEMI

创瑞科技

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

AITSEMI

创瑞科技

Rectangular Case, High-Current and High-Voltage Circuits

Types 271, 272, 273 are designed for frequencies ranging from 100 kHz to 3 MHz and are well suited for high-current and high-voltage radio transmitter circuit applications. Cast in rectangular cases, these capacitors are electrically equivalent to MIL-C-5 Styles CM65 through CM73 in capacitance

CDE

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

文件:124.92 Kbytes Page:1 Pages

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MJE271产品属性

  • 类型

    描述

  • 型号

    MJE271

  • 功能描述

    两极晶体管 - BJT 2A 100V Bipolar

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-9-27 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
NA/
3280
原装现货,当天可交货,原型号开票
ON(安森美)
24+
NA/
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
MOT
23+
NA
20000
全新原装假一赔十
三年内
1983
只做原装正品
22+
TO126
100000
代理渠道/只做原装/可含税
MOTOROLA/摩托罗拉
24+
NA
990000
明嘉莱只做原装正品现货
ON
23+
TO-225
56000
ON/安森美
NA
275000
一级代理原装正品,价格优势,长期供应!
onsemi
21+
5978
只做原装,优势渠道 ,欢迎实单联系
ON
25+23+
TO-225
17591
绝对原装正品全新进口深圳现货

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