MJE20晶体管资料

  • MJE200别名:MJE200三极管、MJE200晶体管、MJE200晶体三极管

  • MJE200生产厂家:美国摩托罗拉半导体公司

  • MJE200制作材料:Si-NPN

  • MJE200性质:低频或音频放大 (LF)_功率放大 (L)

  • MJE200封装形式:直插封装

  • MJE200极限工作电压:25V

  • MJE200最大电流允许值:5A

  • MJE200最大工作频率:<1MHZ或未知

  • MJE200引脚数:3

  • MJE200最大耗散功率:15W

  • MJE200放大倍数

  • MJE200图片代号:B-21

  • MJE200vtest:25

  • MJE200htest:999900

  • MJE200atest:5

  • MJE200wtest:15

  • MJE200代换 MJE200用什么型号代替:BD185,BD195,3DA99B,

MJE20价格

参考价格:¥1.0028

型号:MJE200G 品牌:ON 备注:这里有MJE20多少钱,2024年最近7天走势,今日出价,今日竞价,MJE20批发/采购报价,MJE20行情走势销售排行榜,MJE20报价。
型号 功能描述 生产厂家&企业 LOGO 操作

POWER TRANSISTORS COMPLEMENTARY SILICON

ComplementarySiliconPowerPlasticTransistors Thesedevicesaredesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. Features •Collector-EmitterSustainingVoltage-VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain-hFE=70(Min)@IC=500mAdc

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

ComplementarySiliconPowerPlasticTransistors ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=70(Min)@IC=500mAdc High

MotorolaMotorola, Inc

摩托罗拉

Motorola

NPN Epitaxial Silicon Transistor

Feature •LowCollector-EmitterSaturationVoltage •HighCurrentGainBandwidthProduct:fT=65MHz@IC=100mA(Min.) •ComplementtoMJE210

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

isc Silicon NPN Power Transistor

DESCRIPTION •LowCollector–EmitterSaturationVoltage- •DCCurrentGain-BandwidthProduct •HighDCCurrentGain •ComplementtoMJE210 APPLICATIONS •Designedforlowvoltage,low-power,high-gainaudioamplifierapplications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE200,MJE210typesarecomplementarysilicontransistorsdesignedforhighgainamplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features Lowcollector-emittersaturationvoltage,highcurrentgainbandwidthproduct,ComplementtoMJE210. Applications Designedforgeneralaudioamplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

Complementary Silicon Power Plastic Transistors

Thesedevicesaredesignedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •HighDCCurrentGain •LowCollector−EmitterSaturationVoltage •HighCurrent−Gain−BandwidthProduct •AnnularConstructionforLowLeakage •TheseDevicesarePb−FreeandareRoHSCo

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

Complementary Silicon Power Plastic Transistors

文件:120.99 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Silicon Power Plastic Transistors

文件:120.99 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Complementary Silicon Power Plastic Transistors

文件:120.99 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN 25V 5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN 25V 5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MEDIUM-POWER NPN SILICON TRANSISTORS

文件:78.99 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

MEDIUM-POWER NPN SILICON TRANSISTORS

文件:78.99 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

MJE20产品属性

  • 类型

    描述

  • 型号

    MJE20

  • 功能描述

    两极晶体管 - BJT 5A 25V 15W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-5-26 23:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
三年内
1983
纳立只做原装正品13590203865
ON/安森美
23+
TO-225-3
30000
原装正品公司现货,假一赔十!
onsemi(安森美)
23+
TO-225
1259
原厂订货渠道,支持BOM配单一站式服务
FAIRCHILD/仙童
23+
NA/
3000
优势代理渠道,原装正品,可全系列订货开增值税票
ON
2016+
TO-225-3
35890
只做原装,假一罚十,公司可开17%增值税发票!
FAIRC
2020+
TO-126
16800
绝对原装进口现货,假一赔十,价格优势!?
FCS
2020+
TO-126
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
22+
TO126
100000
代理渠道/只做原装/可含税
ISC(无锡固电)
23+
TO126
6000
ONSEMI/安森美
24+
TO-225
860000
明嘉莱只做原装正品现货

MJE20芯片相关品牌

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  • MSYSTEM
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