位置：首页 > IC中文资料第836页 > MJE20
MJE20晶体管资料
MJE200别名：MJE200三极管、MJE200晶体管、MJE200晶体三极管
MJE200生产厂家：美国摩托罗拉半导体公司
MJE200制作材料：Si-NPN
MJE200性质：低频或音频放大 （LF）_功率放大 （L）
MJE200封装形式：直插封装
MJE200极限工作电压：25V
MJE200最大电流允许值：5A
MJE200最大工作频率：<1MHZ或未知
MJE200引脚数：3
MJE200最大耗散功率：15W
MJE200放大倍数：
MJE200图片代号：B-21
MJE200vtest：25
MJE200htest：999900
- MJE200atest：5
MJE200wtest：15
MJE200代换 MJE200用什么型号代替：BD185,BD195,3DA99B,
MJE20价格
参考价格：￥1.0028
型号：MJE200G 品牌：ON 备注：这里有MJE20多少钱，2025年最近7天走势，今日出价，今日竞价，MJE20批发/采购报价，MJE20行情走势销售排行榜，MJE20报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. Features • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc | ONSEMI 安森美半导体 |   | ||
5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High | Motorola 摩托罗拉 | | ||
NPN Epitaxial Silicon Transistor Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) • Complement to MJE210 | Fairchild 仙童半导体 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Low Collector–Emitter Saturation Voltage- • DC Current Gain-Bandwidth Product • High DC Current Gain • Complement to MJE210 APPLICATIONS • Designed for low voltage, low-power, high-gain audio amplifier applications. | ISC 无锡固电 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. | Central | | ||
Silicon NPN transistor in a TO-126F Plastic Package. Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low collector-emitter saturation voltage, high current gain bandwidth product, Complement to MJE210. Applications Designed for general audio amplifier applications. | FOSHAN 蓝箭电子 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Co | ONSEMI 安森美半导体 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Complementary Silicon Power Plastic Transistors 文件：120.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Trans GP BJT NPN 25V 5A 3-Pin TO-225 Bulk | ETC 知名厂家 | ETC | | |
Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Central | | ||
双极晶体管 | FOSHAN 蓝箭电子 | | ||
Complementary Silicon Power Plastic Transistors 文件：120.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Power Plastic Transistors 文件：120.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 25V 5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 25V 5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
MEDIUM-POWER NPN SILICON TRANSISTORS 文件：78.99 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MEDIUM-POWER NPN SILICON TRANSISTORS 文件：78.99 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |
MJE20产品属性
- 类型
描述
- 型号
MJE20
- 功能描述
两极晶体管 - BJT 5A 25V 15W NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+/25+ |
1670 |
原装正品现货库存价优 |
||||
FAIRCHILDONSEMICONDUCTOR |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON/安森美 |
21+ |
TO-225-3 |
8080 |
只做原装,质量保证 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
FAIRCHILDONSEMICONDUCTOR |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
ON进口原装 |
2023+ |
TO-126 |
8635 |
全新原装正品,优势价格 |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
ISC |
20+ |
TO-126 |
15800 |
原装优势主营型号-可开原型号增税票 |
|||
LIGHTNING |
22+ |
TO126 |
8200 |
全新进口原装现货 |
MJE20芯片相关品牌
MJE20规格书下载地址
MJE20参数引脚图相关
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- MJE230
- MJE225
- MJE224
- MJE223
- MJE222
- MJE221
- MJE220
- MJE210T
- MJE210G
- MJE2103
- MJE2102
- MJE2101
- MJE2100
- MJE210
- MJE20S2
- MJE-20A
- MJE2093
- MJE2092
- MJE2091
- MJE2090
- MJE205K
- MJE2050
- MJE205
- MJE2021
- MJE2020
- MJE2011
- MJE2010
- MJE200G
- MJE2003
- MJE200
- MJE182G
- MJE182
- MJE181G
- MJE181
- MJE180G
- MJE180
- MJE172G
- MJE172
- MJE171G
- MJE171
- MJE170G
- MJE170
- MJE1661
- MJE1660
- MJE16002
- MJE15030
- MJE15028
- MJE1320
- MJE13071
- MJE13070
- MJE13009
- MJE13008
- MJE13007
- MJE13006
- MJE13005
- MJE13004
- MJE13003
- MJE-12B
- MJE127
- MJE122
- MJE11O3
- MJE11O2
MJE20数据表相关新闻
MJL1302A坚持十多年只做原装
MJL1302A坚持十多年只做原装
2025-1-21MJL21195G
MJL21195G
2021-10-22MJE182G 现货热卖。假一赔十！！！！
MJE182G 现货热卖。假一赔十！！！！
2021-7-7MJE802G，MJE702G，只售原装货，片片来自原产，一级代理销售
MJE802G，MJE702G，只售原装货，片片来自原产，一级代理销售
2019-11-30MJE182G双极晶体管-双极结型晶体管(BJT)原装现货
MJE182G双极晶体管 - 双极结型晶体管(BJT)原装现货
2019-11-12MJE182G，双极晶体管-双极结型晶体管(BJT)
深圳市宏世佳电子现货销售
2019-10-23
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
