Complementary Silicon Power Plastic Transistors

These devices are designed for low voltage, low-power, high-gain audio amplifier applications.

Features

• Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc

= 45 (Min) @ IC = 2.0 Adc

= 10 (Min) @ IC = 5.0 Adc

• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

= 0.75 Vdc (Max) @ IC = 2.0 Adc

• High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc

• Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB

• Pb-Free Packages are Available*