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MJE200晶体管资料

  • MJE200别名：MJE200三极管、MJE200晶体管、MJE200晶体三极管

  • MJE200生产厂家：美国摩托罗拉半导体公司

  • MJE200制作材料：Si-NPN

  • MJE200性质：低频或音频放大 （LF）_功率放大 （L）

  • MJE200封装形式：直插封装

  • MJE200极限工作电压：25V

  • MJE200最大电流允许值：5A

  • MJE200最大工作频率：<1MHZ或未知

  • MJE200引脚数：3

  • MJE200最大耗散功率：15W

  • MJE200放大倍数：

  • MJE200图片代号：B-21

  • MJE200vtest：25

  • MJE200htest：999900

  • MJE200atest：5

  • MJE200wtest：15

  • MJE200代换 MJE200用什么型号代替：BD185,BD195,3DA99B,

MJE200价格

参考价格：￥1.0028

型号：MJE200G 品牌：ON 备注：这里有MJE200多少钱，2025年最近7天走势，今日出价，今日竞价，MJE200批发/采购报价，MJE200行情走势销售排行榜，MJE200报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJE200

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. Features • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc

ONSEMI

安森美半导体

MJE200

5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High

Motorola

摩托罗拉

MJE200

NPN Epitaxial Silicon Transistor

Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) • Complement to MJE210

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJE200

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector–Emitter Saturation Voltage- • DC Current Gain-Bandwidth Product • High DC Current Gain • Complement to MJE210 APPLICATIONS • Designed for low voltage, low-power, high-gain audio amplifier applications.

ISC

无锡固电

MJE200

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications.

Central

MJE200

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low collector-emitter saturation voltage, high current gain bandwidth product, Complement to MJE210. Applications Designed for general audio amplifier applications.

FOSHAN

蓝箭电子

MJE200

Complementary Silicon Power Plastic Transistors

文件：120.99 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE2003

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJE200G

Complementary Silicon Power Plastic Transistors

These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Co

ONSEMI

安森美半导体

MJE200_07

Complementary Silicon Power Plastic Transistors

文件：120.99 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE200G

Complementary Silicon Power Plastic Transistors

文件：120.99 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJE200STU

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 25V 5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJE200TSTU

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 25V 5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

200

Easy Identification and Tracing with 10-color Cable

文件：1.18408 Mbytes Page：2 Pages

ARIES

Aries Electronics,inc

200

Resistant to tears and punctures

文件：225.28 Kbytes Page：2 Pages

LSTD

200

TOGGLE SWITCHES - SUB MINIATURE

文件：718.4 Kbytes Page：5 Pages

E-SWITCH

200

100/200

文件：3.83844 Mbytes Page：2 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

200

Bulk Metal® Foil Technology Conformally Coated Precision Current Sensing Resistors with TCR of 5 ppm/°C and values down to 5 mΩ

文件：105.62 Kbytes Page：4 Pages

VishayVishay Siliconix

威世科技威世科技半导体

MJE200产品属性

  • 类型

    描述

  • 型号

    MJE200

  • 功能描述

    两极晶体管 - BJT 5A 25V 15W NPN

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

MJE200供应商更多...

更新时间：2025-8-11 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJE200G
onsemi(安森美)
24+
TO-225
1259
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市得捷芯城科技有限公司
MJE200
台电LIGHTNING
24+
NA/
2000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市凌旭科技有限公司
MJE200G
ON
2016+
TO-225-3
35890
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市金芯世纪电子有限公司
MJE200
22+
TO126
100000
代理渠道/只做原装/可含税
询价
深圳市科芯源微电子有限公司
MJE200
MOTOROLA/摩托罗拉
25+
TO-225AATO-126
54558
百分百原装现货 实单必成 欢迎询价
询价
中天科工半导体（深圳）有限公司
MJE200
ISC
20+
TO-126
15800
原装优势主营型号-可开原型号增税票
询价
深圳市纳立科技有限公司
MJE200G
三年内
1983
只做原装正品
询价
深圳市星辰微电科技有限公司
MJE200
ON
22+
TO-220-3
50000
ON二三极管全系列在售
询价
深圳市联世界科技有限公司
MJE200G
ON
24+/25+
1670
原装正品现货库存价优
询价
深圳市科恒伟业电子有限公司
MJE200
ON
1738+
TO-126
8529
科恒伟业!只做原装正品,假一赔十!
询价

MJE200芯片相关品牌

MJE200规格书下载地址

MJE200参数引脚图相关

MJE200数据表相关新闻

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