NPN Epitaxial Silicon Transistor

Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) • Complement to MJE210

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. Features • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications.

5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS

Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector–Emitter Saturation Voltage- • DC Current Gain-Bandwidth Product • High DC Current Gain • Complement to MJE210 APPLICATIONS • Designed for low voltage, low-power, high-gain audio amplifier applications.

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low collector-emitter saturation voltage, high current gain bandwidth product, Complement to MJE210. Applications Designed for general audio amplifier applications.

Complementary Silicon Power Plastic Transistors

文件：120.99 Kbytes Page：6 Pages

Trans GP BJT NPN 25V 5A 3-Pin TO-225 Bulk

Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

双极晶体管

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L

Complementary Silicon Power Plastic Transistors

These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Co

Complementary Silicon Power Plastic Transistors

文件：120.99 Kbytes Page：6 Pages

Complementary Silicon Power Plastic Transistors

文件：120.99 Kbytes Page：6 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 25V 5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 25V 5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Resistant to tears and punctures

文件：225.28 Kbytes Page：2 Pages

Easy Identification and Tracing with 10-color Cable

文件：1.18408 Mbytes Page：2 Pages

100/200

文件：3.83844 Mbytes Page：2 Pages

Bulk Metal® Foil Technology Conformally Coated Precision Current Sensing Resistors with TCR of 5 ppm/°C and values down to 5 mΩ

文件：105.62 Kbytes Page：4 Pages

TOGGLE SWITCHES - SUB MINIATURE

文件：718.4 Kbytes Page：5 Pages