MJE200晶体管资料
MJE200别名：MJE200三极管、MJE200晶体管、MJE200晶体三极管
MJE200生产厂家：美国摩托罗拉半导体公司
MJE200制作材料：Si-NPN
MJE200性质：低频或音频放大 （LF）_功率放大 （L）
MJE200封装形式：直插封装
MJE200极限工作电压：25V
MJE200最大电流允许值：5A
MJE200最大工作频率：<1MHZ或未知
MJE200引脚数：3
MJE200最大耗散功率：15W
MJE200放大倍数：
MJE200图片代号：B-21
MJE200vtest：25
MJE200htest：999900
- MJE200atest：5
MJE200wtest：15
MJE200代换 MJE200用什么型号代替：BD185,BD195,3DA99B,
MJE200价格
参考价格：￥1.0028
型号：MJE200G 品牌：ON 备注：这里有MJE200多少钱，2026年最近7天走势，今日出价，今日竞价，MJE200批发/采购报价，MJE200行情走势销售排行榜，MJE200报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE200 | NPN Epitaxial Silicon Transistor Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) • Complement to MJE210 | FAIRCHILD 仙童半导体 |   | |
MJE200 | POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low-power, high-gain audio amplifier applications. Features • Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc | ONSEMI 安森美半导体 | | |
MJE200 | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. | CENTRAL | | |
MJE200 | 5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc High | MOTOROLA 摩托罗拉 | | |
MJE200 | isc Silicon NPN Power Transistor DESCRIPTION • Low Collector–Emitter Saturation Voltage- • DC Current Gain-Bandwidth Product • High DC Current Gain • Complement to MJE210 APPLICATIONS • Designed for low voltage, low-power, high-gain audio amplifier applications. | ISC 无锡固电 | | |
MJE200 | Silicon NPN transistor in a TO-126F Plastic Package. Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low collector-emitter saturation voltage, high current gain bandwidth product, Complement to MJE210. Applications Designed for general audio amplifier applications. | FOSHAN 蓝箭电子 | | |
MJE200 | Complementary Silicon Power Plastic Transistors 文件：120.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
MJE200 | Trans GP BJT NPN 25V 5A 3-Pin TO-225 Bulk | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MJE200 | Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | CENTRAL | | |
MJE200 | 双极晶体管 | FOSHAN 蓝箭电子 | | |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS Designed for use in driver and output stages in complementary audio amplifier applications. • High DC Current Gain - hFE = 750 (Win) @ IC = 30 and 40 Adc • True Three Lead Monolithic Construction —Emitter-Base Resistors to Prevent L | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Co | ONSEMI 安森美半导体 | | ||
Complementary Silicon Power Plastic Transistors 文件：120.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Power Plastic Transistors 文件：120.99 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 25V 5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 25V 5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 600V • hFE DC current gain............................... 75 • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION | MITSUBISHI 三菱电机 | | ||
HIGH POWER SWITCHING USE NON-INSULATED TYPE HIGH POWER SWITCHING USE NON-INSULATED TYPE • IC Collector current ........................ 200A • VCEX Collector-emitter voltage ........... 350V • hFE DC current gain............................. 100 • Non-Insulated Type APPLICATION Robotics, Welders, Forklifts, Golf cart | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • VRRM Repetitive peak reverse voltage ........ 400/800/1200/1600V • VDRM Repetitive peak off-state voltage ........ 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. | MITSUBISHI 三菱电机 | | ||
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE • IT (AV) Average on-state current .......... 200A • IF (AV) Average forward current .......... 200A • VRRM Repetitive peak reverse voltage .......... 400/800/1200/1600V • VDRM Repetitive peak off-state voltage .......... 400/800/1200/1600V • MIX DOUBLE A | MITSUBISHI 三菱电机 | |
MJE200产品属性
- 类型
描述
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Polarity：
NPN
- Type：
General Purpose
- VCE(sat) Max (V)：
1.8
- IC Cont. (A)：
5
- VCEO Min (V)：
40
- VEBO (V)：
8
- VBE(sat) (V)：
2.5
- VBE(on) (V)：
1.6
- hFE Min：
45
- hFE Max：
180
- fT Min (MHz)：
65
- PTM Max (W)：
15
- Package Type：
TO-225-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+/25+ |
1670 |
原装正品现货库存价优 |
||||
ON |
2016+ |
TO-225-3 |
35890 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON/安森美 |
25+ |
TO-225-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON(安森美) |
23+ |
TO-225-3 |
15772 |
公司只做原装正品,假一赔十 |
|||
FAIRCHILDONSEMICONDUCTOR |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
ON/安森美 |
24+ |
NA |
14280 |
强势渠道订货 7-10天 |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
台电LIGHTNI |
TO-126 |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
OnSemi |
25+ |
40 |
公司优势库存 热卖中!! |
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DdatasheetPDF页码索引
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