NPN Silicon Plastic-Encapsulate Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Capable of 1.0Watts of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 700V • Operating and storage

High Voltage Fast-switching NPN Power Transistor

DESCRIPTION: The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The MJE13003B is

SWITCHING REGULATOR APPLICATION.

SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION. FEATURES • Excellent Switching Times : ton=0.5μS(Max.), tf=0.7μS(Max.), at IC=1A • High Collector Voltage : VCBO=700V.

NPN Silicon Plastic-Encapsulate Transistor

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NPN MJE SERIES TRANSISTORS

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中等功率双极型晶体管

NPN Silicon Plastic-Encapsulate Transistor

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封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS NPN 400V 1.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN MJE SERIES TRANSISTORS

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NPN MJE SERIES TRANSISTORS

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功率双极晶体管

双极型晶体管-BUL&MJE系列

NPN MJE SERIES TRANSISTORS

文件：391.41 Kbytes Page：4 Pages

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt