丝印代码：MJD45H11；80 V, 8 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele

8 A，80 V，PNP 双极功率晶体管

The Bipolar Power Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)\n• Straight Lead Version in Plastic Sleeves (\"-1\" Suffix)\n• Lead Formed Version in 16 mm Tape and Reel for Surface Mount (\"T4\" Suffix)\n• Electrically Similar to Popular D44H/D45H Series\n• Low Collector Emitter Saturati;

Complementary power transistors

These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications. Low collector-emitter saturation voltage\nFast switching speed\nSurface-mounting TO-252 (DPAK) power package in tape and reel (suffix \"T4\");

isc Silicon PNP Power Transistors

DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= -1.0V(Max)@ IC = -8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in ap

Complementary Power Transistors

Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Fast Switching Speeds ● Complementary Pairs Simplifies Designs ● Pb?Free Packages are Available

COMPLEMENTARY SILICON PNP TRANSISTORS

MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collect

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S

Gate Driver

Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an

isc Silicon PNP Power Transistors

DESCRIPTION • Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A • Fast Switching Speeds • Complement to Type MJD44H11 • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for

Complementary Power Transistors

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Complementary Power Transistors SILICON POWER TRANSISTORS 8 AMPERES

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Complementary Power Transistors

文件：76.24 Kbytes Page：7 Pages

Complementary Power Transistors

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COMPLEMENTARY SILICON PNP TRANSISTORS

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Designed for general purpose power and switching

文件：301.84 Kbytes Page：2 Pages

Complementary power transistors

文件：217.1 Kbytes Page：8 Pages

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes Page：234 Pages

80V,8A,General Purpose PNP Bipolar Transistor

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes Page：234 Pages

丝印代码：MJD45H11A；80 V, 8 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

isc Silicon PNP Power Transistors

DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= -1.0V(Max)@ IC = -8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in ap

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS

Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

Complementary power transistors

MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app

SILICON POWER TRANSISTORS

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in

Complementary Power Transistors

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“

PNP Epitaxial Silicon Transistor

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collect

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications

General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collect

PNP Epitaxial Silicon Transistor

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Complementary Power Transistors

文件：76.24 Kbytes Page：7 Pages

Complementary Power Transistors

文件：76.24 Kbytes Page：7 Pages

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：TRANS PNP 80V 8A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes Page：234 Pages

Discrete and MOSFET components, analog & logic ICs

文件：11.62178 Mbytes Page：234 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Complementary Power Transistors

文件：97.32 Kbytes Page：9 Pages

Complementary Power Transistors

文件：76.24 Kbytes Page：7 Pages

Complementary Power Transistors

文件：114.33 Kbytes Page：8 Pages

Designed for general purpose power and switching

文件：301.84 Kbytes Page：2 Pages

Complementary Power Transistors

文件：76.24 Kbytes Page：7 Pages

Complementary Power Transistors

文件：76.24 Kbytes Page：7 Pages

Complementary Power Transistors

文件：76.24 Kbytes Page：7 Pages

Complementary power transistors

文件：217.1 Kbytes Page：8 Pages

Complementary Power Transistors

文件：76.24 Kbytes Page：7 Pages

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low C

POWER TRANSISTORS(10A,30-80V,50W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 30-80 VOLTS 50 WATTS