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MJD45H11价格
参考价格：￥1.4517
型号：MJD45H11-1G 品牌：ONSemi 备注：这里有MJD45H11多少钱，2025年最近7天走势，今日出价，今日竞价，MJD45H11批发/采购报价，MJD45H11行情走势销售排行榜，MJD45H11报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD45H11 | SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S | Motorola 摩托罗拉 |   | |
MJD45H11 | SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | |
MJD45H11 | COMPLEMENTARY SILICON PNP TRANSISTORS MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app | STMICROELECTRONICS 意法半导体 | | |
MJD45H11 | General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collect | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MJD45H11 | Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Fast Switching Speeds ● Complementary Pairs Simplifies Designs ● Pb?Free Packages are Available | KEXIN 科信电子 | | |
MJD45H11 | isc Silicon PNP Power Transistors DESCRIPTION • Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A • Fast Switching Speeds • Complement to Type MJD44H11 • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for | ISC 无锡固电 | | |
MJD45H11 | Gate Driver Description: M57161L-01 is a hybrid integrated circuit designed for driving Powerex F-Series IGBT modules. This gate driver converts logic level control signals into high current gate drive with suitable on and off bias voltages. Electrical isolation of the input control signal is provided by an | POWEREX | | |
MJD45H11 | Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | |
MJD45H11 | 80 V, 8 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Ele | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
MJD45H11 | isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= -1.0V(Max)@ IC = -8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in ap | ISC 无锡固电 | | |
MJD45H11 | Designed for general purpose power and switching 文件：301.84 Kbytes Page：2 Pages | RECTRON 丽正国际 | | |
MJD45H11 | 80V,8A,General Purpose PNP Bipolar Transistor | GALAXYCHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD. 银河微电常州银河世纪微电子股份有限公司 | | |
MJD45H11 | 8 A，80 V，PNP 双极功率晶体管 | ONSEMI 安森美半导体 | | |
MJD45H11 | Complementary power transistors | STMICROELECTRONICS 意法半导体 | | |
MJD45H11 | Complementary Power Transistors 文件：97.32 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | |
MJD45H11 | Complementary Power Transistors SILICON POWER TRANSISTORS 8 AMPERES 文件：132.35 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD45H11 | Complementary power transistors 文件：217.1 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | |
MJD45H11 | Complementary Power Transistors 文件：114.33 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD45H11 | COMPLEMENTARY SILICON PNP TRANSISTORS 文件：152.94 Kbytes Page：5 Pages | STMICROELECTRONICS 意法半导体 | | |
MJD45H11 | Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S | Motorola 摩托罗拉 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | ||
isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage : VCE(sat)= -1.0V(Max)@ IC = -8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in ap | ISC 无锡固电 | | ||
80 V, 8 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | ||
Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S | Motorola 摩托罗拉 | | ||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | ||
Complementary power transistors MJD44H11T4-A MJD44H11 --> NPN MJD45H11T4-A MJD45H11 --> PNP Description The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications. Features ■ The devices are qualified for automotive app | STMICROELECTRONICS 意法半导体 | | ||
Complementary Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“ | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in | ONSEMI 安森美半导体 | | ||
PNP Epitaxial Silicon Transistor General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collect | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collect | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
PNP Epitaxial Silicon Transistor 文件：164.1 Kbytes Page：5 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：TRANS PNP 80V 8A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：97.32 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：114.33 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Designed for general purpose power and switching 文件：301.84 Kbytes Page：2 Pages | RECTRON 丽正国际 | | ||
Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Complementary power transistors 文件：217.1 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
Complementary Power Transistors 文件：76.24 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power amplifier applications. | Central | | ||
Complementary Power Transistors 文件：97.32 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
SILICON PLASTIC POWER TRANSISTORS 文件：108.31 Kbytes Page：4 Pages | CDIL | | ||
SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS 文件：425.42 Kbytes Page：2 Pages | Central | | ||
SILICON PLANAR POWER TRANSISTORS 文件：213.89 Kbytes Page：4 Pages | CDIL | |
MJD45H11产品属性
- 类型
描述
- 型号
MJD45H11
- 功能描述
两极晶体管 - BJT 8A 80V 20W PNP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
24+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON |
2016+ |
SOT252 |
12253 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FAIRCHILD/仙童 |
10+ |
TO-263 |
1000 |
只售原装正品 |
|||
ST/意法 |
25+ |
TO-252 |
32000 |
ST/意法全新特价MJD45H11T4即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
21+ |
TO-252 |
20000 |
只做原装,质量保证 |
|||
ONSEMI/安森美 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ON(安森美) |
23+ |
13057 |
公司只做原装正品,假一赔十 |
||||
ON/安森美 |
TO-252-3 |
23+ |
6000 |
专业配单原装正品假一罚十 |
|||
24 |
252 |
ON/安森美 |
11 |
92 |
|||
ON/安森美 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
MJD45H11芯片相关品牌
MJD45H11规格书下载地址
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- MJD44E3T4G
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- MJD32CG
- MJD32C1
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- MJD32B
- MJD32
- MJD31T4
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2019-11-1
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