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位置：首页 > IC中文资料第1233页 > MJD45H11

MJD45H11价格

参考价格：￥1.4517

型号：MJD45H11-1G 品牌：ONSemi 备注：这里有MJD45H11多少钱，2025年最近7天走势，今日出价，今日竞价，MJD45H11批发/采购报价，MJD45H11行情走势销售排行榜，MJD45H11报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJD45H11

SILICONPOWERTRANSISTORS8AMPERES80VOLTS20WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MJD45H11

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11

COMPLEMENTARYSILICONPNPTRANSISTORS

MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD45H11

GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplicationsD-PAKforSurfaceMountApplications

GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplications D-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK:“-I”Suffix) •ElectricallySimilartoPopularMJE45H •FastSwitchingSpeeds •LowCollect

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD45H11

ComplementaryPowerTransistors

Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●FastSwitchingSpeeds ●ComplementaryPairsSimplifiesDesigns ●Pb?FreePackagesareAvailable

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
MJD45H11

iscSiliconPNPPowerTransistors

DESCRIPTION •LowCollector-EmitterSaturationVoltage:VCE(sat)=1.0V(Max)@IC=8A •FastSwitchingSpeeds •ComplementtoTypeMJD44H11 •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedfor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD45H11

GateDriver

Description: M57161L-01isahybridintegratedcircuitdesignedfordrivingPowerexF-SeriesIGBTmodules.Thisgatedriverconvertslogiclevelcontrolsignalsintohighcurrentgatedrivewithsuitableonandoffbiasvoltages.Electricalisolationoftheinputcontrolsignalisprovidedbyan

POWEREX

Powerex Power Semiconductors

POWEREX
MJD45H11

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11

80V,8APNPhighpowerbipolartransistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD44H11 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •Ele

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD45H11

iscSiliconPNPPowerTransistors

DESCRIPTION ·LowCollector-EmitterSaturationVoltage :VCE(sat)=-1.0V(Max)@IC=-8A ·FastSwitchingSpeeds ·ComplementtoTypeMJD44H11 ·DPAKforSurfaceMountApplications APPLICATIONS ·Designedforgeneralpurposepoweramplificationand switchingsuchasoutputordriverstagesinap

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD45H11

Designedforgeneralpurposepowerandswitching

文件：301.84 Kbytes Page：2 Pages

RECTRON

Rectron Semiconductor

RECTRON
MJD45H11

ComplementaryPowerTransistors

文件：97.32 Kbytes Page：9 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11

ComplementaryPowerTransistorsSILICONPOWERTRANSISTORS8AMPERES

文件：132.35 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11

Complementarypowertransistors

文件：217.1 Kbytes Page：8 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD45H11

ComplementaryPowerTransistors

文件：114.33 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11

ComplementaryPowerTransistors

文件：76.24 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11

COMPLEMENTARYSILICONPNPTRANSISTORS

文件：152.94 Kbytes Page：5 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD45H11-001

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11-1

SILICONPOWERTRANSISTORS8AMPERES80VOLTS20WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MJD45H11-1G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11-1G

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11-252

iscSiliconPNPPowerTransistors

DESCRIPTION ·LowCollector-EmitterSaturationVoltage :VCE(sat)=-1.0V(Max)@IC=-8A ·FastSwitchingSpeeds ·ComplementtoTypeMJD44H11 ·DPAKforSurfaceMountApplications APPLICATIONS ·Designedforgeneralpurposepoweramplificationand switchingsuchasoutputordriverstagesinap

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD45H11A

80V,8APNPhighpowerbipolartransistor

1.Generaldescription PNPhighpowerbipolartransistorinapowerDPAK,TO-252(SOT428C)Surface-MountedDevice (SMD)plasticpackage. NPNcomplement:MJD44H11A 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •El

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD45H11G

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11G

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11RL

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11RLG

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11RLG

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11T4

SILICONPOWERTRANSISTORS8AMPERES80VOLTS20WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MJD45H11T4

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11T4-A

Complementarypowertransistors

MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD45H11T4G

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11T4G

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •Pb−FreePackagesareAvailable •LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) •Stra

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11T4G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11TF

PNPEpitaxialSiliconTransistor

GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplications D-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK:“-I”Suffix) •ElectricallySimilartoPopularMJE45H •FastSwitchingSpeeds •LowCollect

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD45H11TM

GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplicationsD-PAKforSurfaceMountApplications

GeneralPurposePowerandSwitchingSuchasOutputorDriverStagesinApplications D-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK:“-I”Suffix) •ElectricallySimilartoPopularMJE45H •FastSwitchingSpeeds •LowCollect

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD45H11_10

PNPEpitaxialSiliconTransistor

文件：164.1 Kbytes Page：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD45H11-001

ComplementaryPowerTransistors

文件：76.24 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11-001G

ComplementaryPowerTransistors

文件：76.24 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11-1G

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：散装 描述：TRANS PNP 80V 8A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11AJ

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

MJD45H11G

ComplementaryPowerTransistors

文件：114.33 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11G

ComplementaryPowerTransistors

文件：97.32 Kbytes Page：9 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11G

ComplementaryPowerTransistors

文件：76.24 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11IP

Designedforgeneralpurposepowerandswitching

文件：301.84 Kbytes Page：2 Pages

RECTRON

Rectron Semiconductor

RECTRON
MJD45H11RL

ComplementaryPowerTransistors

文件：76.24 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11RLG

ComplementaryPowerTransistors

文件：76.24 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11T4

Complementarypowertransistors

文件：217.1 Kbytes Page：8 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD45H11T4

ComplementaryPowerTransistors

文件：76.24 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD45H11T4G

ComplementaryPowerTransistors

文件：76.24 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
CJD45H11

COMPLEMENTARYSILICON

DESCRIPTION: TheCENTRALSEMICONDUCTORCJD44H11,CJD45H11typesareComplementarySiliconPowerTransistorsmanufacturedinasurfacemountpackagedesignedforswitchingandpoweramplifierapplications.

CentralCentral Semiconductor Corp

美国中央半导体

Central
45H11

ComplementaryPowerTransistors

文件：97.32 Kbytes Page：9 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
C45H11

SILICONPLASTICPOWERTRANSISTORS

文件：108.31 Kbytes Page：4 Pages

CDIL

Continental Device India Limited

CDIL
CJD45H11

SURFACEMOUNTCOMPLEMENTARYSILICONPOWERTRANSISTORS

文件：425.42 Kbytes Page：2 Pages

CentralCentral Semiconductor Corp

美国中央半导体

Central
CJF45H11

SILICONPLANARPOWERTRANSISTORS

文件：213.89 Kbytes Page：4 Pages

CDIL

Continental Device India Limited

CDIL

MJD45H11产品属性

  • 类型

    描述

  • 型号

    MJD45H11

  • 功能描述

    两极晶体管 - BJT 8A 80V 20W PNP

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

MJD45H11供应商更多...

更新时间：2025-7-26 9:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市勤思达科技有限公司
MJD45H11T4G
ON/安森美
2021+
TO-252
12000
勤思达 只做原装 现货库存
询价
深圳市华高宇电子有限公司
MJD45H11T4
STM
22+
2500
TO-252-3 (DPAK)
询价
深圳市昌和盛利电子有限公司
MJD45H11T4G
23+
TO-252
18000
专注原装正品现货特价中量大可定
询价
深圳市亿智腾科技有限公司
MJD45H11T4G
ON/安森美
24+
TO-252
3580
原装现货/15年行业经验欢迎询价
询价
深圳市豪迈兴电子有限公司
MJD45H11G
China(国产)
24+
5501
只做原装现货假一罚十!价格最低!只卖原装现货
询价
深圳市金芯阳科技有限公司
MJD45H11T4G
ON
16+
TO-252
9000
MD原装正品现货库存
询价
深圳市羿芯诚电子有限公司
MJD45H11G
ON
20+
TO252PB
2860
原厂原装正品价格优惠公司现货欢迎查询
询价
深圳市欧立现代科技有限公司
MJD45H11TM
FAICHILD
24+
TO252
8510
绝对原装现货,价格低,欢迎询购!
询价
深圳市特瑞斯科技有限公司
MJD45H11T4G
ON/ST
23+
TO-252
78520
一级分销商
询价
深圳市凌旭科技有限公司
MJD45H11RLG
ON
2016+
SOT252
12253
只做原装,假一罚十,公司可开17%增值税发票!
询价

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