D45H11晶体管资料
D45H11别名:D45H11三极管、D45H11晶体管、D45H11晶体三极管
D45H11生产厂家:美国哈里斯半导体公司
D45H11制作材料:Si-PNP
D45H11性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
D45H11封装形式:直插封装
D45H11极限工作电压:80V
D45H11最大电流允许值:10A
D45H11最大工作频率:<1MHZ或未知
D45H11引脚数:3
D45H11最大耗散功率:50W
D45H11放大倍数:
D45H11图片代号:B-21
D45H11vtest:80
D45H11htest:999900
- D45H11atest:10
D45H11wtest:50
D45H11代换 D45H11用什么型号代替:ECG378,NTE378,SK9113,
D45H11价格
参考价格:¥2.2998
型号:D45H11 品牌:Fairchild 备注:这里有D45H11多少钱,2026年最近7天走势,今日出价,今日竞价,D45H11批发/采购报价,D45H11行情走势销售排行榜,D45H11报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
D45H11 | POWER TRANSISTORS(10A,30-80V,50W) 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 30-80 VOLTS 50 WATTS | MOSPEC 统懋 | ||
D45H11 | COMPLEMENTARY SILICON POWER TRANSISTORS Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low C | ONSEMI 安森美半导体 | ||
D45H11 | COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 30 - 80 VOLTS 50 WATTS D44H,D44H1,D44H10,D44H11,D44H2,D44H4,D44H5,D44H7,D44H8 --> NPN D45H,D45H1,D45H10,D45H11,D45H2,D45H4,D45H5,D45H7,D45H8 --> PNP | BOCA 博卡 | ||
D45H11 | PNP SILICON POWER TRANSISTORS DESCRIPTION The D45H5, D45H8 and D45H11 are silicon Multi-Epitaxial Planar PNP transistors mounted in Jedec TO-220 plastic package. They are inteded for various switching and general purpose applications. D45H8, D45H11 are complementary with D44H8, D44H11. ■ STMicroelectronics PREFERRED SALEST | STMICROELECTRONICS 意法半导体 | ||
D45H11 | Power Transistor (PNP) Features • Application for Switching Regulators, Converters and Power Amplifiers • Very low collector saturation voltage • RoHS Compliant | TAITRON | ||
D45H11 | High Power Bipolar Transistor Description: Designed for various specific and general purpose application such as; output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; series, shunt and switching regulators; low and high frequency inverters/converters and many others. Features: • Ve | MULTICOMP 易络盟 | ||
D45H11 | 功率双极晶体管,PNP,80 V,10 A These series of plastic,NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. • Low Collector-Emitter Saturation VoltageVCE(sat) = 1.0 V (Max) @ 8.0 A\n• Fast Switching Speeds\n• Complementary Pairs Simplifies Designs\n• Pb-Free Packages are Available; | ONSEMI 安森美半导体 | ||
D45H11 | 封装/外壳:TO-220-3 包装:散装 描述:TRANS PNP 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | ||
D45H11 | 封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | STMICROELECTRONICS 意法半导体 | ||
D45H11 | 80V,10A,1.67W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | CENTRAL | ||
D45H11 | Trans GP BJT PNP 80V 10A 3-Pin(3+Tab) TO-220 Tube | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
D45H11 | Complementary Silicon Power Transistors 文件:87.33 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | ||
D45H11 | PNP SILICON POWER TRANSISTORS 文件:152.08 Kbytes Page:5 Pages | STMICROELECTRONICS 意法半导体 | ||
D45H11 | 10 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 60,80 VOLTS 文件:189.31 Kbytes Page:4 Pages | RECTRON 丽正 | ||
D45H11 | Silicon PNP Power Transistors 文件:78.31 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
D45H11 | isc Silicon PNP Power Transistor 文件:190.72 Kbytes Page:2 Pages | ISC 无锡固电 | ||
D45H11 | Silicon PNP Power Transistors 文件:93.42 Kbytes Page:3 Pages | SAVANTIC | ||
D45H11 | PNP Power Amplifier 文件:251.02 Kbytes Page:6 Pages | FAIRCHILD 仙童半导体 | ||
D45H11 | Complementary Silicon Power Transistors 文件:68.07 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | ||
D45H11 | Silicon PNP Power Transistors 文件:91.82 Kbytes Page:3 Pages | SAVANTIC | ||
D45H11 | Complementary power transistors 文件:188.4 Kbytes Page:8 Pages | STMICROELECTRONICS 意法半导体 | ||
丝印代码:D45H11FP;Complementary power transistors Description These low voltage transistors are housed in fully isolated TO-220FP packages and form a complementary pair. They are manufactured in multi epitaxial planar technology for general purpose in linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Fas | STMICROELECTRONICS 意法半导体 | |||
Low Vcesat PNP Epitaxial Planar Transistor Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free lead plating package | CYSTEKEC 全宇昕科技 | |||
Low Vcesat PNP Epitaxial Planar Transistor Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free lead plating package | CYSTEKEC 全宇昕科技 | |||
Low Vcesat PNP Epitaxial Planar Transistor Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • Pb-free package | CYSTEKEC 全宇昕科技 | |||
PNP Power Amplifier 文件:115.39 Kbytes Page:2 Pages | FAIRCHILD 仙童半导体 | |||
PNP Power Amplifier 文件:251.02 Kbytes Page:6 Pages | FAIRCHILD 仙童半导体 | |||
Complementary Silicon Power Transistors 文件:87.33 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
Complementary Silicon Power Transistors 文件:68.07 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
Complementary Silicon Power Transistors 文件:102.9 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 | |||
SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS Complementary Power Transistors DPAK For Surface Mount Applications . . . for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters, and power amplifiers. • Lead Formed for Surface Mount Application in Plastic S | MOTOROLA 摩托罗拉 | |||
SILICON POWER TRANSISTORS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Stra | ONSEMI 安森美半导体 |
D45H11产品属性
- 类型
描述
- Package:
TO-220AB
- Grade:
Industrial
- Transistor Polarity:
PNP
- Collector-Emitter Voltage_nom(V):
80
- Collector-Emitter Voltage_max(V):
80
- Collector-Base Voltage_max(V):
80
- Collector Current_max(A):
10
- Collector Current_abs_max(A):
10
- Dc Current Gain_min:
40
- Test Condition for hFE (IC):
4
- Test Condition for hFE (VCE)_spec(V):
1
- VCE(sat)_max(V):
1
- Test Condition for VCE(sat) - IC:
8
- Test Condition for VCE(sat) - IB_spec(mA):
400
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-220 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ST/意法 |
25+ |
TO-220 |
32000 |
ST/意法全新特价D45H11即刻询购立享优惠#长期有货 |
|||
ST/意法 |
24+ |
TO-220 |
3000 |
正规报关原装现货系列订货技术支持 |
|||
ON(安森美) |
23+ |
TO-220(TO-220-3) |
10475 |
公司只做原装正品,假一赔十 |
|||
STM |
23+ |
TO-220-3 |
12000 |
||||
ST(意法) |
25+ |
TO-220 |
21000 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
ST |
2432+ |
3200 |
15年芯片行业经验/只供原装正品:13570885961邹小姐 |
||||
ST/意法 |
25+ |
TO-220 |
25000 |
代理渠道假一罚十 |
|||
ON(安森美) |
2511 |
TO-220(TO-220-3) |
8484 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
|||
ST(意法半导体) |
24+ |
TO-220-3 |
4191 |
全新原装正品现货可开票 |
D45H11规格书下载地址
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