80 V, 8 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El

80 V, 8 A PNP high power bipolar transistor

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

COMPLEMENTARY SILICON

DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power amplifier applications.

Complementary Power Transistors

文件：97.32 Kbytes Page：9 Pages

SILICON PLASTIC POWER TRANSISTORS

文件：108.31 Kbytes Page：4 Pages

SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

文件：425.42 Kbytes Page：2 Pages

SILICON PLANAR POWER TRANSISTORS

文件：213.89 Kbytes Page：4 Pages