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位置：首页 > IC中文资料第10003页 > MJD41

MJD41晶体管资料

  • MJD41C别名：MJD41C三极管、MJD41C晶体管、MJD41C晶体三极管

  • MJD41C生产厂家：韩国三星公司

  • MJD41C制作材料：

  • MJD41C性质：低频或音频放大 （LF）_功率放大 （PA）

  • MJD41C封装形式：贴片封装

  • MJD41C极限工作电压：

  • MJD41C最大电流允许值：6A

  • MJD41C最大工作频率：<1MHZ或未知

  • MJD41C引脚数：3

  • MJD41C最大耗散功率：20W

  • MJD41C放大倍数：

  • MJD41C图片代号：G-217

  • MJD41Cvtest：0

  • MJD41Chtest：999900

  • MJD41Catest：6

  • MJD41Cwtest：20

  • MJD41C代换 MJD41C用什么型号代替：

MJD41价格

参考价格：￥1.4470

型号：MJD41CT4G 品牌：ONSemi 备注：这里有MJD41多少钱，2025年最近7天走势，今日出价，今日竞价，MJD41批发/采购报价，MJD41行情走势销售排行榜，MJD41报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJD41C

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKforSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“1”Suffix) •Elect

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41C

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

GeneralPurposeAmplifier LowSpeedSwitchingApplications D-PAKforSurfaceMountApplications •LoadFormedforSurfaceMountApplication(NoSuffix) •StraightLead(I-PAK,“-I”Suffix) •ElectricallySimilartoPopularTIP41andTIP41C

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD41C

Complementary Power Transistors

Features ●LeadFormedforSurfaceMountApplicationsinPlasticSleeves ●MonolithicConstructionWithBuilt?inBase?EmitterResistors ●Pb-FreePackagesareAvailable

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
MJD41C

NPN PLASTIC ENCAPSULATE TRANSISTORS

NPNPLASTICENCAPSULATETRANSISTORS Features: *Designedforgeneralpurposeamplierandlowspeedswitchingapplications. *MonolithicConstructionWithBuilt–inBase–EmitterResistors.

WEITRON

Weitron Technology

WEITRON
MJD41C

isc Silicon NPN Power Transistors

DESCRIPTION •DCCurrentGain-hFE=30(Min)@IC=0.3A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=100V(Min) •ComplementtoTypeMJD42C •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Design

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD41C

Complementary Silicon Power Ttransistors

DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

TGS
MJD41C

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES •DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionin16mmTapeandReel(“T4”Suff

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
MJD41C

100 V, 6 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD41series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds Applications •Powermanagement •Loadswitch •Linear

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD41C

TO-252-2L Plastic-Encapsulate Transistors

FEATURES DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications. LeadFormedforSurfaceMountApplicationsinPlastic Sleeves(NoSuffix) StraightLeadVersioninPlasticSleeves(“–1”Suffix) LeadFormedVersionin16mmTapeandReel(“T4”Suffix) ElectricallySimil

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MJD41C

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.5V(Max)@IC=6A ·ComplementtoTypeMJD42C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD41C

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.5V(Max)@IC=6A ·ComplementtoTypeMJD42C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD41C

TRANSISTOR (NPN)

TRANSISTOR(NPN) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications.

FS

First Silicon Co., Ltd

FS
MJD41C-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.5V(Max)@IC=6A ·ComplementtoTypeMJD42C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD41C-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.5V(Max)@IC=6A ·ComplementtoTypeMJD42C APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD41CJ

100 V, 6 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD41series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds Applications •Powermanagement •Loadswitch •Linear

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD41C-Q

100 V, 6 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD41series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •QualifiedaccordingtoAEC-Q101andrecommendedforusei

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD41C-QJ

100 V, 6 A NPN high power bipolar transistor

Featuresandbenefits •Highthermalpowerdissipationcapability •Highenergyefficiencyduetolessheatgeneration •ElectricallysimilartopopularMJD41series •Lowcollectoremittersaturationvoltage •Fastswitchingspeeds •QualifiedaccordingtoAEC-Q101andrecommendedforusei

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NEXPERIA
MJD41CRLG

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKforSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“1”Suffix) •Elect

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41CT4G

Complementary Power Transistors

ComplementaryPowerTransistorsDPAKforSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“1”Suffix) •Elect

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41C

isc Silicon NPN Power Transistors

文件：359.93 Kbytes Page：3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD41C

Complementary Power Transistors

文件：89.89 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41C

Complementary Power Transistors

文件：123.02 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41C

Complementary Power Transistors

文件：78.58 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41C_06

Complementary Power Transistors

文件：78.58 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41C_11

Complementary Power Transistors

文件：123.02 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41C_16

Complementary Power Transistors

文件：89.89 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41C_17

isc Silicon NPN Power Transistors

文件：359.93 Kbytes Page：3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD41C-QJ

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

MJD41CRL

Complementary Power Transistors

文件：78.58 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41CRLG

Complementary Power Transistors

文件：78.58 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41CRLG

Complementary Power Transistors

文件：123.02 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41CRLG

Complementary Power Transistors

文件：89.89 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41CRLG

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 6A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41CT4

Complementary Power Transistors

文件：78.58 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41CT4G

Complementary Power Transistors

文件：78.58 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41CT4G

Complementary Power Transistors

文件：123.02 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD41CT4G

Complementary Power Transistors

文件：89.89 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

MJD41产品属性

  • 类型

    描述

  • 型号

    MJD41

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    Complementary Power Transistors

MJD41供应商更多...

更新时间：2025-7-24 10:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市锦喆鸿电子有限公司
MJD41C
CJ
20+
TO-252-2L
160
现货库存,实单请给接受价格
询价
深圳市旺财半导体有限公司
MJD41C
ST
23+
SOT-252
3880
正品原装货价格低
询价
深圳市祥瑞智科技有限公司
MJD41C
CJ长电
25+
TO-252-2L
250
原厂原装,价格优势
询价
深圳市高捷芯城科技有限公司
MJD41CTF
onsemi(安森美)
24+
TO-252
2317
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市龙瀚电子有限公司
MJD41CT4G
ON
16+/17+
DPAK
78000
渠道现货库存-原装正品
询价
深圳市向鸿伟业电子有限公司
MJD41CRLG
ONSEMI/安森美
2410+
TO-252
1
原装正品.假一赔百.正规渠道.原厂追溯.
询价
深圳市科恒伟业电子有限公司
MJD41C
ON
2016+
TO252
6528
只做进口原装现货!假一赔十!
询价
中天科工半导体（深圳）有限公司
MJD41CG
ONSEMI/安森美
25+
TO-252
45000
ONSEMI/安森美全新现货MJD41CG即刻询购立享优惠#长期有排单订
询价
深圳市汇莱威科技有限公司
MJD41CTF
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
询价
深圳市芯球通科技有限公司
MJD41CT4G
ON(安森美)
23+
TO-252-2(DPAK)
9888
公司只做原装正品,假一赔十
询价

MJD41芯片相关品牌

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MJD41规格书下载地址

MJD41参数引脚图相关

MJD41数据表相关新闻

DdatasheetPDF页码索引

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