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位置：首页 > IC中文资料 > MJD41C

MJD41C晶体管资料

  • MJD41C别名：MJD41C三极管、MJD41C晶体管、MJD41C晶体三极管

  • MJD41C生产厂家：韩国三星公司

  • MJD41C制作材料：

  • MJD41C性质：低频或音频放大 （LF）_功率放大 （PA）

  • MJD41C封装形式：贴片封装

  • MJD41C极限工作电压：

  • MJD41C最大电流允许值：6A

  • MJD41C最大工作频率：<1MHZ或未知

  • MJD41C引脚数：3

  • MJD41C最大耗散功率：20W

  • MJD41C放大倍数：

  • MJD41C图片代号：G-217

  • MJD41Cvtest：0

  • MJD41Chtest：999900

  • MJD41Catest：6

  • MJD41Cwtest：20

  • MJD41C代换 MJD41C用什么型号代替：

MJD41C价格

参考价格：￥1.4470

型号：MJD41CT4G 品牌：ONSemi 备注：这里有MJD41C多少钱，2026年最近7天走势，今日出价，今日竞价，MJD41C批发/采购报价，MJD41C行情走势销售排行榜，MJD41C报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD41C

丝印代码：MJD41C；100 V, 6 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear

NEXPERIA

安世

MJD41C

丝印代码：MJD41CXXXX；TO-252-2L Plastic-Encapsulate Transistors

FEATURES Designed for General Purpose Amplifier and Low Speed S witching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Simil

DGNJDZ

南晶电子

MJD41C

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD41C

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD41C

100 V, 6 A NPN high power bipolar transistor

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.\n PNP complement: MJD42C • High thermal power dissipation capability\n• High energy efficiency due to less heat generation\n• Electrically similar to popular MJD41 series\n• Low collector emitter saturation voltage\n• Fast switching speeds;

NEXPERIA

安世

MJD41C

NPN, 100V, 6A, TO252

BVCEO > 100V\nIC = 6A Continuous Collector Current\nICM = 10A Peak Pulse Current\nIdeal for Power Switching or Amplification Applications\nComplementary PNP Type: MJD42C\nLead-Free Finish; RoHS Compliant (Notes 1 & 2)\nHalogen and Antimony Free. “Green” Device (Note 3)\nAn automotive-compliant part

DIODES

美台半导体

MJD41C

Complementary Power Transistors

Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect

ONSEMI

安森美半导体

MJD41C

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP41 and TIP41C

FAIRCHILD

仙童半导体

MJD41C

Complementary Power Transistors

Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Monolithic Construction With Built?in Base ? Emitter Resistors ● Pb-Free Packages are Available

KEXIN

科信电子

MJD41C

NPN PLASTIC ENCAPSULATE TRANSISTORS

NPN PLASTIC ENCAPSULATE TRANSISTORS Features: * Designed for general purpose amplier and low speed switching applications. * Monolithic Construction With Built–in Base–Emitter Resistors.

WEITRON

MJD41C

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications.

FS

MJD41C

isc Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain -hFE = 30(Min)@ IC= 0.3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) • Complement to Type MJD42C • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Design

ISC

无锡固电

MJD41C

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

TGS

MJD41C

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Designed for General Purpose Amplifier and Low Speed Switching Applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suff

JIANGSU

长电科技

MJD41C

isc Silicon NPN Power Transistors

文件：359.93 Kbytes Page：3 Pages

ISC

无锡固电

MJD41C

Complementary Power Transistors

文件：123.02 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD41C

Complementary Power Transistors

文件：78.58 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD41C

晶体管

JSCJ

长晶科技

MJD41C

Complementary Power Transistors

文件：89.89 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD41C-Q

丝印代码：MJD41CA；100 V, 6 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

NEXPERIA

安世

MJD41C-251

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD41C-252

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD41CJ

100 V, 6 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear

NEXPERIA

安世

MJD41C-QJ

100 V, 6 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i

NEXPERIA

安世

MJD41CRLG

Complementary Power Transistors

Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect

ONSEMI

安森美半导体

MJD41CT4G

Complementary Power Transistors

Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect

ONSEMI

安森美半导体

MJD41C_06

Complementary Power Transistors

文件：78.58 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD41C_11

Complementary Power Transistors

文件：123.02 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD41C_16

Complementary Power Transistors

文件：89.89 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD41C_17

isc Silicon NPN Power Transistors

文件：359.93 Kbytes Page：3 Pages

ISC

无锡固电

MJD41C-QJ

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

MJD41CRL

Complementary Power Transistors

文件：78.58 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD41CRLG

Complementary Power Transistors

文件：78.58 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD41CRLG

Complementary Power Transistors

文件：123.02 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD41CRLG

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 6A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD41CRLG

Complementary Power Transistors

文件：89.89 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD41CT4

Complementary Power Transistors

文件：78.58 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD41CT4G

Complementary Power Transistors

文件：89.89 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD41CT4G

Complementary Power Transistors

文件：123.02 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD41CT4G

Complementary Power Transistors

文件：78.58 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD41C产品属性

  • 类型

    描述

  • Pb-free：

    Pb

  • AEC Qualified：

    A

  • Halide free：

    H

  • PPAP Capablee：

    P

  • Status：

    Active

  • Polarity：

    NPN

  • Type：

    General Purpose

  • VCE(sat) Max (V)：

    1.5

  • IC Cont. (A)：

    6

  • VCEO Min (V)：

    100

  • VCBO (V)：

    100

  • VEBO (V)：

    5

  • VBE(on) (V)：

    2

  • hFE Min：

    15

  • hFE Max：

    75

  • fT Min (MHz)：

    3

  • PTM Max (W)：

    20

  • Package Type：

    DPAK-3

MJD41C供应商更多...

更新时间：2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJD41CTF
onsemi(安森美)
24+
TO-252
2317
原厂订货渠道,支持BOM配单一站式服务
询价
中天科工半导体（深圳）有限公司
MJD41CG
ONSEMI/安森美
25+
TO-252
45000
ONSEMI/安森美全新现货MJD41CG即刻询购立享优惠#长期有排单订
询价
深圳市联世界科技有限公司
MJD41C
CJ/长电
21+
TO-251
80000
实单价优-原装现货BOM配单
询价
深圳市华跃芯科技有限公司
MJD41CT4G
onsemi安森美
25+
TO-252(DPAK)
2500
终端可免费供样,支持BOM配单!
询价
深圳市赛特兴科技有限公司
MJD41C
ON
23+
TO252
1687
正规渠道,只有原装!
询价
深圳市芯球通科技有限公司
MJD41CT4G
ON(安森美)
23+
TO-252-2(DPAK)
9888
公司只做原装正品,假一赔十
询价
深圳诚思涵科技有限公司
MJD41C
ON
18+
TO-252
85600
保证进口原装可开17%增值税发票
询价
深圳市拓亿芯电子有限公司
MJD41C
CJ/长电
25+
TO-252
9000
只做进口原装假一罚百
询价
深圳市正纳电子有限公司
MJD41C
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
深圳市明嘉莱科技有限公司
MJD41C
CJ/长电
25+
TO-252
880000
明嘉莱只做原装正品现货
询价

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MJD41C规格书下载地址

MJD41C参数引脚图相关

MJD41C数据表相关新闻

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