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MJD41C晶体管资料
MJD41C别名：MJD41C三极管、MJD41C晶体管、MJD41C晶体三极管
MJD41C生产厂家：韩国三星公司
MJD41C制作材料：
MJD41C性质：低频或音频放大 （LF）_功率放大 （PA）
MJD41C封装形式：贴片封装
MJD41C极限工作电压：
MJD41C最大电流允许值：6A
MJD41C最大工作频率：<1MHZ或未知
MJD41C引脚数：3
MJD41C最大耗散功率：20W
MJD41C放大倍数：
MJD41C图片代号：G-217
MJD41Cvtest：0
MJD41Chtest：999900
- MJD41Catest：6
MJD41Cwtest：20
MJD41C代换 MJD41C用什么型号代替：
MJD41C价格
参考价格：￥1.4470
型号：MJD41CT4G 品牌：ONSemi 备注：这里有MJD41C多少钱，2025年最近7天走势，今日出价，今日竞价，MJD41C批发/采购报价，MJD41C行情走势销售排行榜，MJD41C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD41C | Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect | ONSEMI 安森美半导体 |   | |
MJD41C | General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP41 and TIP41C | Fairchild 仙童半导体 | | |
MJD41C | Complementary Power Transistors Features ● Lead Formed for Surface Mount Applications in Plastic Sleeves ● Monolithic Construction With Built?in Base ? Emitter Resistors ● Pb-Free Packages are Available | KEXIN 科信电子 | | |
MJD41C | NPN PLASTIC ENCAPSULATE TRANSISTORS NPN PLASTIC ENCAPSULATE TRANSISTORS Features: * Designed for general purpose ampli er and low speed switching applications. * Monolithic Construction With Built–in Base–Emitter Resistors. | WEITRON | | |
MJD41C | isc Silicon NPN Power Transistors DESCRIPTION • DC Current Gain -hFE = 30(Min)@ IC= 0.3A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) • Complement to Type MJD42C • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Design | ISC 无锡固电 | | |
MJD41C | Complementary Silicon Power Ttransistors DESCRIPTION It is intented for use in power amplifier and switching applications. | TGS | | |
MJD41C | TO-251-3L Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES • Designed for General Purpose Amplifier and Low Speed Switching Applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” Suff | JIANGSU 长电科技 | | |
MJD41C | 100 V, 6 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear | NEXPERIA 安世 | | |
MJD41C | TO-252-2L Plastic-Encapsulate Transistors FEATURES Designed for General Purpose Amplifier and Low Speed S witching Applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves (“–1” Suffix) Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix) Electrically Simil | DGNJDZ 南晶电子 | | |
MJD41C | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | |
MJD41C | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | |
MJD41C | TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications. | FS | | |
MJD41C | isc Silicon NPN Power Transistors 文件：359.93 Kbytes Page：3 Pages | ISC 无锡固电 | | |
MJD41C | Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
MJD41C | Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
MJD41C | Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
MJD41C | 100V,6A,Medium Power NPN Bipolar Transistor | GALAXY 银河微电 | | |
MJD41C | NPN, 100V, 6A, TO252 | DIODES 美台半导体 | | |
MJD41C | 6.0 A，100 V，NPN 双极功率晶体管 | ONSEMI 安森美半导体 | | |
Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | ||
100 V, 6 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds Applications • Power management • Load switch • Linear | NEXPERIA 安世 | | ||
100 V, 6 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i | NEXPERIA 安世 | | ||
100 V, 6 A NPN high power bipolar transistor Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD41 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use i | NEXPERIA 安世 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“1” Suffix) • Elect | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
isc Silicon NPN Power Transistors 文件：359.93 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 100V 6A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：78.58 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：123.02 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
Complementary Power Transistors 文件：89.89 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | |
MJD41C产品属性
- 类型
描述
- 型号
MJD41C
- 制造商
ONSEMI
- 制造商全称
ON Semiconductor
- 功能描述
Complementary Power Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-252 |
2317 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
ON原现 |
TO-252 |
23+ |
6000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
CJ/长电 |
25+ |
TO-252 |
9000 |
只做进口原装假一罚百 |
|||
ONSEMI/安森美 |
25+ |
TO-252 |
45000 |
ONSEMI/安森美全新现货MJD41CG即刻询购立享优惠#长期有排单订 |
|||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
TO-252/220 |
2021 |
CJ |
52500 |
全新原装公司现货
|
|||
ON |
2320+ |
DPAK3 |
5000 |
只做原装,特价清货! |
|||
ON |
24+ |
DPAK |
21935 |
||||
ON/安森美 |
23+ |
25850 |
新到现货,只有原装 |
||||
FAIRCHILD |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
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MJD41C规格书下载地址
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