位置：首页 > IC中文资料 > MJD41C-252
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD41C-252 | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A ·Complement to Type MJD42C APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 |   | |
Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 6A APPLICATIONS · General purpose amplifier · Low speed switching applications | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
5000 |
公司存货 |
|||||
ONS |
08+ |
DPAK |
20000 |
普通 |
|||
24+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ON/安森美 |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
|||
DIODES/美台 |
24+ |
N/A |
500000 |
美台原厂超低价支持 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
ON/安森美 |
23+ |
TO-251-252 |
50000 |
全新原装正品现货,支持订货 |
|||
CJ/长电 |
24+ |
TO-251 |
50000 |
只做原装，欢迎询价，量大价优 |
|||
ON/安森美 |
22+ |
TO-251 |
20000 |
只做原装 |
|||
UTG |
23+ |
TO-126 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
MJD41C-252规格书下载地址
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DdatasheetPDF页码索引
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