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MJD30晶体管资料

  • MJD30别名：MJD30三极管、MJD30晶体管、MJD30晶体三极管

  • MJD30生产厂家：韩国三星公司

  • MJD30制作材料：

  • MJD30性质：低频或音频放大 （LF）_功率放大 （PA）

  • MJD30封装形式：贴片封装

  • MJD30极限工作电压：

  • MJD30最大电流允许值：1A

  • MJD30最大工作频率：<1MHZ或未知

  • MJD30引脚数：3

  • MJD30最大耗散功率：15W

  • MJD30放大倍数：

  • MJD30图片代号：G-217

  • MJD30vtest：0

  • MJD30htest：999900

  • MJD30atest：1

  • MJD30wtest：15

  • MJD30代换 MJD30用什么型号代替：

MJD30价格

参考价格：￥1.9865

型号：MJD3055T4 品牌：STMICROELECTRONICS 备注：这里有MJD30多少钱，2025年最近7天走势，今日出价，今日竞价，MJD30批发/采购报价，MJD30行情走势销售排行榜，MJD30报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD3055

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Designed for General Purpose Amplifier an d Low Speed Switching Applications   ● Electrically Simiar to MJE3055 ● DC Current Gain Specified to 10A

JIANGSU

长电科技

MJD3055

TO-252-2L Plastic-Encapsulate Transistors

FEATURES Designed for General Purpose Amplifier da nLow Speed Switching Applications Electrically Simiar to MJE3055 DC Current Gain Specified to10 Amperes

DGNJDZ

南晶电子

MJD3055

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD3055

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD3055

Complementary Power Transistors

MJD2955 (PNP) MJD3055 (NPN) SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Strai

ONSEMI

安森美半导体

MJD3055

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4)

STMICROELECTRONICS

意法半导体

MJD3055

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ -I “ Suffix) • Electrically Similar to Popular MJE3055T • DC Current Gain Specified to 10A • High Current Gain -

Fairchild

仙童半导体

MJD3055

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A • Complement to Type MJD2955 • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed

ISC

无锡固电

MJD3055-251

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD3055-252

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.1V(Max) @IC= 4A ·Complement to Type MJD2955 APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD3055G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

ONSEMI

安森美半导体

MJD3055T4G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

ONSEMI

安森美半导体

MJD3055

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD3055

Transistor

ETC

知名厂家

MJD3055

TRANSISTOR:Genreal Purpuse

FS

MJD3055

双极型晶体管

LUGUANG

鲁光电子

MJD3055

COMPLEMENTARY POWER TRANSISTORS

文件：188.18 Kbytes Page：6 Pages

STMICROELECTRONICS

意法半导体

MJD3055

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055

TRANSISTOR (NPN)

文件：80.34 Kbytes Page：1 Pages

FS

MJD3055G

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055G

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055G

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD3055G

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘 描述：TRANS NPN 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD3055RLG

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS NPN 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD3055T4

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055T4G

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055T4G

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD3055T4G

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD30产品属性

  • 类型

    描述

  • 型号

    MJD30

  • 功能描述

    两极晶体管 - BJT 10A 60V 20W NPN

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

MJD30供应商更多...

更新时间：2025-10-27 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市金芯世纪电子有限公司
MJD3055
FAIRCHILD/仙童
22+
SOT-252
100000
代理渠道/只做原装/可含税
询价
深圳市得捷芯城科技有限公司
MJD3055
CJ/长电
24+
NA/
15000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市星辰微电科技有限公司
MJD3055
ON
22+
TO-220-3
50000
ON二三极管全系列在售
询价
深圳市明嘉莱科技有限公司
MJD3055
MOTOROLA/摩托罗拉
24+
TO252
880000
明嘉莱只做原装正品现货
询价
中天科工半导体（深圳）有限公司
MJD3055
原装
25+
TO-252
20300
原装特价MJD3055即刻询购立享优惠#长期有货
询价
深圳市威雅利发展有限公司
MJD3055
长电
2021
TO-252
30312
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市宏世佳电子科技有限公司
MJD3055
ON
2025+
TO-252
4835
全新原厂原装产品、公司现货销售
询价
深圳市亿联芯电子科技有限公司
MJD3055
CJ/长电
2023+
TO-252
6895
原厂全新正品旗舰店优势现货
询价
深圳市赛尔通科技有限公司
MJD3055T4G
ON
23+
DPAK
56000
询价
深圳市芯球通科技有限公司
MJD3055T4G
ON(安森美)
23+
TO-252-2(DPAK)
12055
公司只做原装正品,假一赔十
询价

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MJD30规格书下载地址

MJD30参数引脚图相关

MJD30数据表相关新闻

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