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位置：首页 > IC中文资料第129页 > MJD2955

MJD2955晶体管资料

  • MJD2955别名：MJD2955三极管、MJD2955晶体管、MJD2955晶体三极管

  • MJD2955生产厂家：韩国三星公司

  • MJD2955制作材料：Darl

  • MJD2955性质：低频或音频放大 （LF）

  • MJD2955封装形式：贴片封装

  • MJD2955极限工作电压：

  • MJD2955最大电流允许值：10A

  • MJD2955最大工作频率：>4MHZ

  • MJD2955引脚数：3

  • MJD2955最大耗散功率：20W

  • MJD2955放大倍数：

  • MJD2955图片代号：G-127

  • MJD2955vtest：0

  • MJD2955htest：4000100

  • MJD2955atest：10

  • MJD2955wtest：20

  • MJD2955代换 MJD2955用什么型号代替：

MJD2955价格

参考价格：￥1.5499

型号：MJD2955G 品牌：ONSemi 备注：这里有MJD2955多少钱，2025年最近7天走势，今日出价，今日竞价，MJD2955批发/采购报价，MJD2955行情走势销售排行榜，MJD2955报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD2955

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications

General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ -I “ Suffix) • Electrically Similar to Popular MJE2955T • DC Current Gain Specified to 10A • High Current G

Fairchild

仙童半导体

MJD2955

Complementary Power Transistors

MJD2955 (PNP) MJD3055 (NPN) SILICON POWER TRANSISTORS 10 AMPERES 60 VOLTS, 20 WATTS DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Strai

ONSEMI

安森美半导体

MJD2955

isc Silicon PNP Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1 V(Max)@ IC = -4A • Complement to Type MJD3055 • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

ISC

无锡固电

MJD2955

TO-251-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications ● Electrically Simiar to MJD3055 ● DC Current Gain Specified to 10 Amperes

JIANGSU

长电科技

MJD2955

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJD2955 and MJD3055 form complementary PNP-NPN pairs. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4)

STMICROELECTRONICS

意法半导体

MJD2955

TRANSISTOR (PNP)

FEATURES ● Designed for General Purpose Amplifier and Low Speed Switching Applications ● Electrically Simiar to MJD3055 ● DC Current Gain Specified to10 Amperes

FS

MJD2955

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD2955

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘 描述：TRANS PNP 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD2955

General Purpose Amplifier

文件：49 Kbytes Page：4 Pages

Fairchild

仙童半导体

MJD2955

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955

双极型晶体管

LUGUANG

鲁光电子

MJD2955

60V,10A,Medium Power PNP Bipolar Transistor

GALAXY

银河微电

MJD2955

晶体管

JSCJ

长晶科技

MJD2955

COMPLEMENTARY POWER TRANSISTORS

文件：188.18 Kbytes Page：6 Pages

STMICROELECTRONICS

意法半导体

MJD2955-1G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

ONSEMI

安森美半导体

MJD2955G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

ONSEMI

安森美半导体

MJD2955T4G

Complementary Power Transistors

Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suff

ONSEMI

安森美半导体

MJD2955_02

COMPLEMENTARY POWER TRANSISTORS

文件：188.18 Kbytes Page：6 Pages

STMICROELECTRONICS

意法半导体

MJD2955_06

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955_11

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955_13

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD2955-001

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955-001G

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955-1G

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD2955-1G

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：托盘 描述：TRANS PNP 60V 10A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD2955G

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955G

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD2955G

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955T4

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955T4G

Complementary Power Transistors

文件：123.1 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955T4G

Complementary Power Transistors DPAK For Surface Mount Applications

文件：78.33 Kbytes Page：6 Pages

ONSEMI

安森美半导体

MJD2955T4G

Complementary Power Transistors

文件：138.37 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD2955TF

General Purpose Amplifier

文件：49 Kbytes Page：4 Pages

Fairchild

仙童半导体

C2955

INFRARED IC INTERNAL INSPECTION SYSTEM

The C2955 is an IC internal inspection system incorporating an infrared microscope and an infrared CCD camera. Use of a newly developed infrared CCD camera enables a high sensitivity approximately ten times that of conventional systems (in comparisons by HAMAMATSU), at a wavelength of 1.0 µm, maki

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

2955

Wire Connectors

文件：401.38 Kbytes Page：1 Pages

Heyco

2955

1500 MHz Center Frequency

文件：52.5 Kbytes Page：3 Pages

KR

2955-SMA

1500 MHz Bandpass Filter

文件：72.2 Kbytes Page：3 Pages

KR

AD-2955

ADSL LINE TRANSFORMER

文件：277.44 Kbytes Page：1 Pages

BOTHHAND

MJD2955产品属性

  • 类型

    描述

  • 型号

    MJD2955

  • 功能描述

    两极晶体管 - BJT 10A 60V 20W PNP

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

MJD2955供应商更多...

更新时间：2025-12-25 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJD2955TF
onsemi(安森美)
24+
TO-252
2317
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市得捷芯城科技有限公司
MJD2955
CJ/长电
24+
NA/
3742
原装现货,当天可交货,原型号开票
询价
深圳市科恒伟业电子有限公司
MJD2955T4G
ON
24+
TO-252
8540
只做原装正品现货或订货假一赔十!
询价
深圳市富达微科技有限公司
MJD2955
长电
24+
TO252
8000
原厂原装，价格优势，欢迎洽谈！
询价
深圳市赛美科科技有限公司
MJD2955
FAIRCHILD
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市赛尔通科技有限公司
MJD2955T4G
ON
23+
DPAK
56000
询价
深圳市赛特兴科技有限公司
MJD2955
长电
23+
TO252
15000
正规渠道,只有原装!
询价
深圳市芯皇电子有限公司
MJD2955
ON
22+
TO-220-3
50000
原装正品假一罚十,代理渠道价格优
询价
中天科工半导体（深圳）有限公司
MJD2955
ONSEMI/安森美
25+
TO-252
45000
ONSEMI/安森美全新现货MJD2955即刻询购立享优惠#长期有排单订
询价
深圳市明嘉莱科技有限公司
MJD2955
CJ/长电
25+
TO-252
880000
明嘉莱只做原装正品现货
询价

MJD2955芯片相关品牌

MJD2955规格书下载地址

MJD2955参数引脚图相关

MJD2955数据表相关新闻

DdatasheetPDF页码索引

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