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MJD2955晶体管资料
MJD2955别名:MJD2955三极管、MJD2955晶体管、MJD2955晶体三极管
MJD2955生产厂家:韩国三星公司
MJD2955制作材料:Darl
MJD2955性质:低频或音频放大 (LF)
MJD2955封装形式:贴片封装
MJD2955极限工作电压:
MJD2955最大电流允许值:10A
MJD2955最大工作频率:>4MHZ
MJD2955引脚数:3
MJD2955最大耗散功率:20W
MJD2955放大倍数:
MJD2955图片代号:G-127
MJD2955vtest:0
MJD2955htest:4000100
- MJD2955atest:10
MJD2955wtest:20
MJD2955代换 MJD2955用什么型号代替:
MJD2955价格
参考价格:¥1.5499
型号:MJD2955G 品牌:ONSemi 备注:这里有MJD2955多少钱,2024年最近7天走势,今日出价,今日竞价,MJD2955批发/采购报价,MJD2955行情走势销售排行榜,MJD2955报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MJD2955 | ComplementaryPowerTransistors MJD2955(PNP) MJD3055(NPN) SILICONPOWERTRANSISTORS10AMPERES60VOLTS,20WATTS DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •Strai | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJD2955 | COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION TheMJD2955andMJD3055formcomplementaryPNP-NPNpairs.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERRED SALESTYPES ■SURFACE-MOUNTINGTO-252(DPAK) POWERPACKAGEINTAPE&REEL (SUFFIXT4) | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
MJD2955 | GeneralPurposeAmplifierLowSpeedSwitchingApplicationsD-PAKforSurfaceMountApplications GeneralPurposeAmplifier LowSpeedSwitchingApplications D-PAKforSurfaceMountApplications •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularMJE2955T •DCCurrentGainSpecifiedto10A •HighCurrentG | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MJD2955 | TRANSISTOR(PNP) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications ●ElectricallySimiartoMJD3055 ●DCCurrentGainSpecifiedto10Amperes | FS First Silicon Co., Ltd | ||
MJD2955 | iscSiliconPNPPowerTransistor DESCRIPTION •ExcellentSafeOperatingArea •Collector-EmitterSaturationVoltage- :VCE(sat)=-1.1V(Max)@IC=-4A •ComplementtoTypeMJD3055 •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICA | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
MJD2955 | TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeed SwitchingApplications ●ElectricallySimiartoMJD3055 ●DCCurrentGainSpecifiedto10Amperes | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
MJD2955 | 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:托盘 描述:TRANS PNP 60V 10A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJD2955 | ComplementaryPowerTransistors 文件:138.37 Kbytes Page:7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJD2955 | ComplementaryPowerTransistors 文件:123.1 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJD2955 | COMPLEMENTARYPOWERTRANSISTORS 文件:188.18 Kbytes Page:6 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
MJD2955 | GeneralPurposeAmplifier 文件:49 Kbytes Page:4 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MJD2955 | ComplementaryPowerTransistorsDPAKForSurfaceMountApplications 文件:78.33 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
ComplementaryPowerTransistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistors ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“−1”Suff | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
COMPLEMENTARYPOWERTRANSISTORS 文件:188.18 Kbytes Page:6 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
ComplementaryPowerTransistorsDPAKForSurfaceMountApplications 文件:78.33 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistors 文件:123.1 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistors 文件:138.37 Kbytes Page:7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistorsDPAKForSurfaceMountApplications 文件:78.33 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistorsDPAKForSurfaceMountApplications 文件:78.33 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistors 文件:138.37 Kbytes Page:7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:托盘 描述:TRANS PNP 60V 10A IPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistors 文件:138.37 Kbytes Page:7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistorsDPAKForSurfaceMountApplications 文件:78.33 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistors 文件:123.1 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistorsDPAKForSurfaceMountApplications 文件:78.33 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistorsDPAKForSurfaceMountApplications 文件:78.33 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistors 文件:123.1 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPowerTransistors 文件:138.37 Kbytes Page:7 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
GeneralPurposeAmplifier 文件:49 Kbytes Page:4 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
INFRAREDICINTERNALINSPECTIONSYSTEM TheC2955isanICinternalinspectionsystemincorporatinganinfraredmicroscopeandaninfraredCCDcamera.UseofanewlydevelopedinfraredCCDcameraenablesahighsensitivityapproximatelytentimesthatofconventionalsystems(incomparisonsbyHAMAMATSU),atawavelengthof1.0µm,maki | HAMAMATSUHamamatsu Photonics Co.,Ltd. 滨松光子滨松光子学株式会社 | |||
1500MHzCenterFrequency 文件:52.5 Kbytes Page:3 Pages | KRKR Electronics, Inc. KR Electronics, Inc. | |||
WireConnectors 文件:401.38 Kbytes Page:1 Pages | Heyco Heyco | |||
1500MHzBandpassFilter 文件:72.2 Kbytes Page:3 Pages | KRKR Electronics, Inc. KR Electronics, Inc. | |||
ADSLLINETRANSFORMER 文件:277.44 Kbytes Page:1 Pages | BOTHHAND Bothhand USA |
MJD2955产品属性
- 类型
描述
- 型号
MJD2955
- 功能描述
两极晶体管 - BJT 10A 60V 20W PNP
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
N/A |
59510 |
正品授权货源可靠 |
||||
ON/安森美 |
2105+ |
TO-252 |
10053 |
||||
2021+ |
60000 |
原装现货,欢迎询价 |
|||||
ON/安森美 |
23+ |
TO-252 |
23816 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
1845+ |
TO252 |
5790 |
只做原装!量大可以订货!特价支持实单! |
|||
长电 |
12+pbf |
TO-252 |
2500 |
普通 |
|||
ON/安森美 |
TO252 |
7906200 |
|||||
onsemi |
23+ |
TO-252-3,DPak(2 引线 + 接片 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
ON |
20+ |
SOT252 |
2500 |
全新原装,价格优势 |
|||
CJ/长电 |
21+ |
TO-252 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
MJD2955规格书下载地址
MJD2955参数引脚图相关
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