MJD253价格

参考价格:¥1.6590

型号:MJD253-1G 品牌:ONSemi 备注:这里有MJD253多少钱,2025年最近7天走势,今日出价,今日竞价,MJD253批发/采购报价,MJD253行情走势销售排行榜,MJD253报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD253

Complementary Silicon Plastic Power Transistor

Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur

ONSEMI

安森美半导体

MJD253

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low Collector−Emitter Saturation Voltage, High Current−Gain. Applications Low power audio amplifier,Low current, high speed switching applications.

FOSHAN

蓝箭电子

MJD253

isc Silicon PNP Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A • Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A • Complement to the NPN MJD243 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed fo

ISC

无锡固电

MJD253

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD253

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD253

音频功放晶体管

thundersoft

中科创达

MJD253

双极晶体管

FOSHAN

蓝箭电子

MJD253

4.0 A,100 V PNP 双极功率晶体管

ONSEMI

安森美半导体

MJD253

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

文件:98.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MJD253

Complementary Silicon Plastic Power Transistor

文件:149.11 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MJD253

Complementary Silicon Plastic Power Transistors

文件:112.97 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MJD253

Complementary Silicon Plastic Power Transistors

文件:168.56 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MJD253

Complementary Silicon Plastic Power Transistors

文件:168.56 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor

Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur

ONSEMI

安森美半导体

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

Complementary Silicon Plastic Power Transistor

Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

文件:168.56 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

文件:98.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

文件:98.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

文件:112.97 Kbytes Page:8 Pages

ONSEMI

安森美半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:管件 描述:TRANS PNP 100V 4A IPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:剪切带(CT) 描述:TRANS PWR PNP 4A 100V DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

文件:98.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor

文件:149.11 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

文件:98.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

文件:112.97 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Silicone Splicing Tape

文件:14.37 Kbytes Page:2 Pages

3M

Direct replacement for T2 BA7s

文件:275.41 Kbytes Page:5 Pages

MARL

Axial Lead & Cartridge Fuses

文件:864.72 Kbytes Page:4 Pages

Littelfuse

力特

T-1 3/4 STANDARD MIDGET GROOVE

文件:335.2 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Two Axis, Ministick Controller With Optional Momentary Switch

文件:4.22921 Mbytes Page:2 Pages

CTS

西迪斯

MJD253产品属性

  • 类型

    描述

  • 型号

    MJD253

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    Complementary Silicon Plastic Power Transistor

更新时间:2025-10-28 9:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ONSEMI
两年内
N/A
10875
原装现货,实单价格可谈
ON/安森美
24+
TO252
24548
原厂可订货,技术支持,直接渠道。可签保供合同
JD/晶导
23+
SMAF
69820
终端可以免费供样,支持BOM配单!
ON/安森美
23+
TO-251
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ON/安森美
24+
DPAK
20000
只做原厂渠道 可追溯货源
三年内
1983
只做原装正品
ON
25+
TO-251
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ONSEMI/安森美
2410+
NA
60000
原装正品 货真价美
ON(安森美)
24+
TO-252-2(DPAK)
16048
原厂可订货,技术支持,直接渠道。可签保供合同
ON
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十

MJD253数据表相关新闻