MJD253价格

参考价格:¥1.6590

型号:MJD253-1G 品牌:ONSemi 备注:这里有MJD253多少钱,2025年最近7天走势,今日出价,今日竞价,MJD253批发/采购报价,MJD253行情走势销售排行榜,MJD253报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD253

Complementary Silicon Plastic Power Transistor

Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur

ONSEMI

安森美半导体

MJD253

isc Silicon PNP Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 40(Min) @ IC= -0.2 A • Low Collector Saturation Voltage- : VCE(sat) = -0.3V(Max.)@ IC= -0.5 A • Complement to the NPN MJD243 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed fo

ISC

无锡固电

MJD253

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD253

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

MJD253

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Low Collector−Emitter Saturation Voltage, High Current−Gain. Applications Low power audio amplifier,Low current, high speed switching applications.

FOSHAN

蓝箭电子

MJD253

4.0 A,100 V PNP 双极功率晶体管

ONSEMI

安森美半导体

MJD253

音频功放晶体管

thundersoft

中科创达

MJD253

双极晶体管

FOSHAN

蓝箭电子

MJD253

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

文件:98.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MJD253

Complementary Silicon Plastic Power Transistor

文件:149.11 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MJD253

Complementary Silicon Plastic Power Transistors

文件:112.97 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MJD253

Complementary Silicon Plastic Power Transistors

文件:168.56 Kbytes Page:8 Pages

ONSEMI

安森美半导体

MJD253

Complementary Silicon Plastic Power Transistors

文件:168.56 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor

Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur

ONSEMI

安森美半导体

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.3V(Max) @IC= -0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications

ISC

无锡固电

Complementary Silicon Plastic Power Transistor

Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

文件:168.56 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

文件:98.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

文件:98.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

文件:112.97 Kbytes Page:8 Pages

ONSEMI

安森美半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:管件 描述:TRANS PNP 100V 4A IPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:剪切带(CT) 描述:TRANS PWR PNP 4A 100V DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

文件:98.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor

文件:149.11 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications

文件:98.46 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Complementary Silicon Plastic Power Transistors

文件:112.97 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Silicone Splicing Tape

文件:14.37 Kbytes Page:2 Pages

3M

Axial Lead & Cartridge Fuses

文件:864.72 Kbytes Page:4 Pages

Littelfuse

力特

Two Axis, Ministick Controller With Optional Momentary Switch

文件:4.22921 Mbytes Page:2 Pages

CTS

西迪斯

T-1 3/4 STANDARD MIDGET GROOVE

文件:335.2 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Direct replacement for T2 BA7s

文件:275.41 Kbytes Page:5 Pages

MARL

MJD253产品属性

  • 类型

    描述

  • 型号

    MJD253

  • 制造商

    ONSEMI

  • 制造商全称

    ON Semiconductor

  • 功能描述

    Complementary Silicon Plastic Power Transistor

更新时间:2025-12-25 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
TO252
24548
原厂可订货,技术支持,直接渠道。可签保供合同
ON
24+
TO-252
5000
十年沉淀唯有原装
ON
23+
TO-252
20000
ON/安森美
NA
275000
一级代理原装正品,价格优势,长期供应!
ON
25+
DPAK
200
百分百原装正品 真实公司现货库存 本公司只做原装 可
ON/安森美
2022+
TO-252-3
8000
只做原装支持实单,有单必成。
ONSEMI/安森美
25+
TO252
90000
ONSEMI/安森美全新特价MJD253T4G即刻询购立享优惠#长期有货
ON/安森美
22+
N/A
22500
现货,原厂原装假一罚十!
ON(安森美)
24+
TO-252-2(DPAK)
16048
原厂可订货,技术支持,直接渠道。可签保供合同
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持

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