MJD243价格
参考价格：￥1.6590
型号：MJD243G 品牌：ONSemi 备注：这里有MJD243多少钱，2026年最近7天走势，今日出价，今日竞价，MJD243批发/采购报价，MJD243行情走势销售排行榜，MJD243报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD243 | NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = | MOTOROLA 摩托罗拉 |   | |
MJD243 | Complementary Silicon Plastic Power Transistor Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur | ONSEMI 安森美半导体 | | |
MJD243 | isc Silicon NPN Power Transistor DESCRIPTION • DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A • Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A • Complement to the PNP MJD253 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low po | ISC 无锡固电 | | |
MJD243 | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.3V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | |
MJD243 | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.3V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | |
MJD243 | Silicon NPN transistor in a TO-252 Plastic Package Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features Low Collector−Emitter Saturation Voltage, High Current−Gain. Applications Low power audio amplifier, Low current, high speed switching applications. | FOSHAN 蓝箭电子 | | |
MJD243 | NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS | ETC 知名厂家 | ETC | |
MJD243 | 音频功放晶体管 | THUNDERSOFT 中科创达 | | |
MJD243 | 双极晶体管 | FOSHAN 蓝箭电子 | | |
MJD243 | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘 描述：TRANS NPN 100V 4A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MJD243 | Complementary Silicon Plastic Power Transistors 文件：168.56 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD243 | Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications 文件：98.46 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD243 | Complementary Silicon Plastic Power Transistors 文件：112.97 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD243 | Complementary Silicon Plastic Power Transistors 文件：168.56 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD243 | Complementary Silicon Plastic Power Transistor 文件：149.11 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = | MOTOROLA 摩托罗拉 | | ||
Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.3V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.3V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | ||
Complementary Silicon Plastic Power Transistor Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur | ONSEMI 安森美半导体 | | ||
NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = | MOTOROLA 摩托罗拉 | | ||
Complementary Silicon Plastic Power Transistor Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications 文件：98.46 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor 文件：149.11 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistors 文件：168.56 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistors 文件：112.97 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistors 文件：112.97 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications 文件：98.46 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor 文件：149.11 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications 文件：98.46 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT） 描述：TRANS PWR NPN 4A 100V DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor 文件：149.11 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications 文件：98.46 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistors 文件：112.97 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS(6A,65W) 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS | MOSPEC 统懋 | | ||
POWER TRANSISTORS(6A,65W) 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS | MOSPEC 统懋 | | ||
Complementary Silicon Plastic Power Transistors 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage — | MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTORS(6A,65W) 6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS | MOSPEC 统懋 | | ||
Complementary Silicon Plastic Power Transistors 6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage — | MOTOROLA 摩托罗拉 | |
MJD243产品属性
- 类型
描述
- Pb-free：
Pb
- AEC Qualified：
A
- Halide free：
H
- PPAP Capablee：
P
- Status：
Active
- Polarity：
NPN
- IC Continuous (A)：
4
- VCEO(sus) Min (V)：
100
- hFE Min：
40
- hFE Max：
180
- PTM Max (W)：
12.5
- fT Min (MHz)：
40
- Package Type：
DPAK-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ON |
2023+ |
SOT252 |
5800 |
进口原装,现货热卖 |
|||
ON(安森美) |
2511 |
4525 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
||||
ON(安森美) |
24+ |
DPAK |
5000 |
全新原装正品,现货销售 |
|||
ON/安森美 |
25+ |
DPAK-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON |
TO252 |
15620 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ONFAI |
26+ |
SOT-223 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
ON/安森美 |
21+ |
DPAK-3 |
8080 |
只做原装,质量保证 |
|||
原厂 |
24+ |
N/A |
10000 |
只做现货 |
|||
ON/安森美 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
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