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MJD243价格
参考价格：￥1.6590
型号：MJD243G 品牌：ONSemi 备注：这里有MJD243多少钱，2025年最近7天走势，今日出价，今日竞价，MJD243批发/采购报价，MJD243行情走势销售排行榜，MJD243报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD243 | NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = | Motorola 摩托罗拉 |   | |
MJD243 | Complementary Silicon Plastic Power Transistor Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur | ONSEMI 安森美半导体 | | |
MJD243 | Silicon NPN transistor in a TO-252 Plastic Package Descriptions Silicon NPN transistor in a TO-252 Plastic Package. Features Low Collector−Emitter Saturation Voltage, High Current−Gain. Applications Low power audio amplifier, Low current, high speed switching applications. | FOSHAN 蓝箭电子 | | |
MJD243 | isc Silicon NPN Power Transistor DESCRIPTION • DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A • Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A • Complement to the PNP MJD253 • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for low po | ISC 无锡固电 | | |
MJD243 | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.3V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | |
MJD243 | Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.3V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | |
MJD243 | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘 描述：TRANS NPN 100V 4A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MJD243 | Complementary Silicon Plastic Power Transistors 文件：168.56 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD243 | Complementary Silicon Plastic Power Transistors 文件：112.97 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD243 | Complementary Silicon Plastic Power Transistors 文件：168.56 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD243 | Complementary Silicon Plastic Power Transistor 文件：149.11 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD243 | Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications 文件：98.46 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD243 | NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS | ETC 知名厂家 | ETC | |
MJD243 | 音频功放晶体管 | thundersoft 中科创达 | | |
MJD243 | 双极晶体管 | FOSHAN 蓝箭电子 | | |
NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = | Motorola 摩托罗拉 | | ||
Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.3V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.3V(Max) @IC= 0.5A APPLICATIONS · Designed for low power audio amplifier and low-current, high-speed switching applications | ISC 无锡固电 | | ||
Complementary Silicon Plastic Power Transistor Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur | ONSEMI 安森美半导体 | | ||
NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain — hFE = 40 (Min) @ IC = 200 mAdc = 15 (Min) @ IC = | Motorola 摩托罗拉 | | ||
Complementary Silicon Plastic Power Transistor Complementary Silicon Plastic Power Transistor DPAK−3 for Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifier applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc • High DC Cur | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications 文件：98.46 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor 文件：149.11 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistors 文件：168.56 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistors 文件：112.97 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications 文件：98.46 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor 文件：149.11 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistors 文件：112.97 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：剪切带（CT） 描述：TRANS PWR NPN 4A 100V DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications 文件：98.46 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications 文件：98.46 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistor 文件：149.11 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Silicon Plastic Power Transistors 文件：112.97 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
SCHOTTKY RECTIFIER 175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu | SMCDIODE 桑德斯微电子 | | ||
Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10) 文件：124.92 Kbytes Page：1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Low forward voltage drop 文件：225.85 Kbytes Page：4 Pages | SMC 桑德斯微电子 | | ||
SCHOTTKY RECTIFIER 文件：104.04 Kbytes Page：5 Pages | IRF | | ||
Interactive Catalog Replaces Catalog Pages 文件：348.38 Kbytes Page：5 Pages | Honeywell 霍尼韦尔 | |
MJD243产品属性
- 类型
描述
- 型号
MJD243
- 功能描述
两极晶体管 - BJT 4A 100V 12.5W NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONSEMI/安森美 |
22+ |
TO-252 |
12500 |
原装正品支持实单 |
|||
ONS |
23+ |
NA |
2307 |
专做原装正品,假一罚百! |
|||
ON(安森美) |
24+ |
标准封装 |
8000 |
原厂原装，价格优势，欢迎洽谈！ |
|||
ON |
22+ |
TO-220-3 |
50000 |
原装正品假一罚十,代理渠道价格优 |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
ON/安森美 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
ON(安森美) |
23+ |
DPAK-3 |
12369 |
公司只做原装正品,假一赔十 |
|||
ON |
TO252 |
15620 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ON |
2025+ |
TO-252-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
ON/安森美 |
24+ |
DPAK-3 |
30000 |
原装正品公司现货,假一赔十! |
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MJD243规格书下载地址
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