Silicon Complementary Transistors Audio Output, Video, Driver

Description: The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide c

Complementary Transistors

Integrated Circuit Module − Hybrid, Audio Power Amplifier, 50W

Features: 2 Power Supplied Required Darlington Type Pure Complementary Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Maximum Supply Voltatge, VCCmax . . . . . . . . . . . .. . . . . . . . . . . . . ±53V Collector Current, ICmax . . . . . . . . . . . .

Integrated Circuit Module − Hybrid, Audio Power Amplifier, 35W

Features: • 2 Power Supplied Required • Darlington Type • Quasi−Complementary Output

Integrated Circuit Audio Power Amplifier, 5.8W

Description: The NTE1285 and NTE1286 are audio power amplifiers in a 7–Lead SIP type package designed especially for car radio and car stereo applications. These devices are encapsulated in newly developed small packages featuring low thermal resistance, providing easy design for 2Ω. At 14.4V t

Integrated Circuit Audio Power Amplifier, 5.8W

Description: The NTE1285 and NTE1286 are audio power amplifiers in a 7–Lead SIP type package designed especially for car radio and car stereo applications. These devices are encapsulated in newly developed small packages featuring low thermal resistance, providing easy design for 2Ω. At 14.4V t

Integrated Circuit Audio Power Amplifier, 10W for Car Radio

Description: The NTE1288 has improved performance with the same pin configuration as the NTE1232. The additional features of the NTE1232; very low number of external components, ease of assembly, space and cost saving, are maintained. The device provides a high output current capability (up to

Integrated Circuit Audio Power Amplifier, 10W for Car Radio

Description:\nThe NTE1288 has improved performance with the same pin configuration as the NTE1232. The additional features of the NTE1232; very low number of external components, ease of assembly, space and cost saving, are maintained. The device provides a high output current capability (up to 3.5A

Integrated Circuit TV Vertical Deflection System

Description:\nThe NTE1289 is a monolithic integrated circuit in a 12–Lead quad in–line package designed for use in black and white and color TV receivers.Features:\n• Synchronization Circuit\n• Oscillator and Ramp Generator\n• High Power Gain Amplifier\n• Flyback Generator\n• Voltage Regulator

Integrated Circuit TV Vertical Deflection System

Description: The NTE1289 is a monolithic integrated circuit in a 12–Lead quad in–line package designed for use in black and white and color TV receivers. Features: • Synchronization Circuit • Oscillator and Ramp Generator • High Power Gain Amplifier • Flyback Generator • Vol

Silicon Complementary Transistors General Purpose Amp

Description: The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use in general purpose power amplifier and switching applications. Features: • High VCE Ratings • Exceptional Power Dissipation Capability

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

Silicon epitaxial planar type

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50W MIN AF POWER AMPLIFIER OUTPUT STAGE (D.P.P.)

OUTPUT STAGE OF AF POWER AMP