MJD117晶体管资料

  • MJD117别名:MJD117三极管、MJD117晶体管、MJD117晶体三极管

  • MJD117生产厂家:韩国三星公司

  • MJD117制作材料:Darl

  • MJD117性质:低频或音频放大 (LF)

  • MJD117封装形式:贴片封装

  • MJD117极限工作电压

  • MJD117最大电流允许值:2A

  • MJD117最大工作频率:<1MHZ或未知

  • MJD117引脚数:3

  • MJD117最大耗散功率:20W

  • MJD117放大倍数

  • MJD117图片代号:G-127

  • MJD117vtest:0

  • MJD117htest:999900

  • MJD117atest:2

  • MJD117wtest:20

  • MJD117代换 MJD117用什么型号代替

MJD117价格

参考价格:¥1.2879

型号:MJD117-1G 品牌:ONSemi 备注:这里有MJD117多少钱,2024年最近7天走势,今日出价,今日竞价,MJD117批发/采购报价,MJD117行情走势销售排行榜,MJD117报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJD117

ComplementaryDarlingtonPowerTransistors

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD117

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Application ■Lin

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
MJD117

EPITAXIALPLANARPNPTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain.:hFE=1000(Min.),VCE=-4V,IC=-1A. •LowCollector-EmitterSaturationVoltage. •StraightLead(IPAK,LSuffix) •ComplementarytoMJD112/L.

KECKEC CORPORATION

KEC株式会社

KEC
MJD117

D-PAKforSurfaceMountApplications

D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP117

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD117

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●LowCollector-EmitterSaturationVoltage ●ComplementarytoMJD112

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
MJD117

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •HighDCcurrentgain •Built-inadamperdiodeatE-C •Leadformedforsurfacemountapplications(NOsuffix) •Straightlead(IPAK,“-I”suffix) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designe

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD117

SiliconPNPtransistorinaTO-252PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features HighDCcurrentgain,built-inadamperdiodeatE-C,electricallysimilartopopularTIP117. Applications Mediumpowerswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
MJD117

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications

CDIL

CDIL

CDIL
MJD117

iscSiliconPNPDarlingtonPowerTransistor

文件:385.79 Kbytes Page:3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD117

ComplementaryDarlingtonPowerTransistors

文件:153.95 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD117

ComplementaryDarlingtonPowerTransistors

文件:144.73 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD117

ComplementaryDarlingtonPowerTransistors

文件:101.63 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD117

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

文件:250.7 Kbytes Page:6 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
MJD117

ComplementarypowerDarlingtontransistors

文件:388.17 Kbytes Page:10 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
MJD117

TRANSISTOR(PNP)

文件:391.1 Kbytes Page:3 Pages

FS

First Silicon Co., Ltd

FS
MJD117

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:托盘 描述:TRANS PNP DARL 100V 2A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDarlingtonPowerTransistors

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDarlingtonPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDarlingtonPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDarlingtonPowerTransistors

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

D-PAKforSurfaceMountApplications

D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP117

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

EPITAXIALPLANARPNPTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain.:hFE=1000(Min.),VCE=-4V,IC=-1A. •LowCollector-EmitterSaturationVoltage. •StraightLead(IPAK,LSuffix) •ComplementarytoMJD112/L.

KECKEC CORPORATION

KEC株式会社

KEC

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications

CDIL

CDIL

CDIL

ComplementaryDarlingtonPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDarlingtonPowerTransistors

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDarlingtonPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves(

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

iscSiliconPNPDarlingtonPowerTransistor

文件:385.79 Kbytes Page:3 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ComplementaryDarlingtonPowerTransistors

文件:101.63 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDarlingtonPowerTransistors

文件:101.63 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:管件 描述:TRANS PNP DARL 100V 2A IPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDarlingtonPowerTransistors

文件:101.63 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDarlingtonPowerTransistors

文件:144.73 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementarypowerDarlingtontransistors

文件:388.17 Kbytes Page:10 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

ComplementaryDarlingtonPowerTransistors

文件:101.63 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDarlingtonPowerTransistors

文件:101.63 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryDarlingtonPowerTransistors

文件:144.73 Kbytes Page:8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Electrician’sMultimeterwithNon-ContactVoltage

Featuresinclude: •VoltAlert™technologyfornon-contactvoltagedetection •AutoVoltautomaticac/dcvoltageselection •LoZ:helpspreventfalsereadingsduetoghostvoltage •LargewhiteLEDbacklighttoworkinpoorlylitareas •True-rmsforaccuratemeasurementsonnon-linearloads •

FLUKEFluke Corporation

福禄克公司

FLUKE

Point-to-pointWiring

文件:300.88 Kbytes Page:1 Pages

ARIES

Aries Electronics,inc

ARIES

1?쓝1??Stratum3OCXO

文件:103.9 Kbytes Page:4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

RENESASMCU

文件:867.34 Kbytes Page:114 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

RENESASMCU

文件:879.67 Kbytes Page:116 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

MJD117产品属性

  • 类型

    描述

  • 型号

    MJD117

  • 功能描述

    达林顿晶体管 2A 100V Bipolar

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

更新时间:2024-5-1 17:24:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
21+
NA
2500
只做原装,假一罚十
ON/安森美
23+
DPAK
90000
只做原厂渠道价格优势可提供技术支持
ON/安森美
TO252
7906200
ST
23+
TO-252
4500
全新原装、诚信经营、公司现货销售!
FAIRCHILD/仙童
2019+全新原装正品
TO252
8950
BOM配单专家,发货快,价格低
ON
23+
SOT-252
589610
新到现货 原厂一手货源 价格秒杀代理!
CJ
TO-252-2L
12500
16
只做原装进口IOR-TI-ST,可以送样品
ON/安森美
2105+
TO-252
10053
FAIRCHILD
23+
TO-252
12300
全新原装真实库存含13点增值税票!
SOT252
1000

MJD117芯片相关品牌

  • ARIES
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  • YANGJIE

MJD117数据表相关新闻