MJD117晶体管资料
MJD117别名：MJD117三极管、MJD117晶体管、MJD117晶体三极管
MJD117生产厂家：韩国三星公司
MJD117制作材料：Darl
MJD117性质：低频或音频放大 （LF）
MJD117封装形式：贴片封装
MJD117极限工作电压：
MJD117最大电流允许值：2A
MJD117最大工作频率：<1MHZ或未知
MJD117引脚数：3
MJD117最大耗散功率：20W
MJD117放大倍数：
MJD117图片代号：G-127
MJD117vtest：0
MJD117htest：999900
- MJD117atest：2
MJD117wtest：20
MJD117代换 MJD117用什么型号代替：
MJD117价格
参考价格：￥1.2879
型号：MJD117-1G 品牌：ONSemi 备注：这里有MJD117多少钱，2026年最近7天走势，今日出价，今日竞价，MJD117批发/采购报价，MJD117行情走势销售排行榜，MJD117报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：MJD117；General Purpose Transistor Features - Built-in a damper diode at E-C. - High DC current gain. - Lead formed for surface mount applications. - Straight lead. | COMCHIP 典琦 |   | ||
MJD117 | Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− | ONSEMI 安森美半导体 | | |
MJD117 | Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | |
MJD117 | Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | |
MJD117 | 2.0 A，100 V，PNP 达林顿双极功率晶体管 The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)\n• Straight Lead Version in Plastic Sleeves (\"1\" Suffix)\n• Lead Formed Version in 16 mm Tape and Reel (\"T4\" Suffix)\n• Surface Mount Replacements for TIP110-TIP117 Series\n• Monolithic Construction With Built-in Base-Em; | ONSEMI 安森美半导体 | | |
MJD117 | Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications | ONSEMI 安森美半导体 | | |
MJD117 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Lin | STMICROELECTRONICS 意法半导体 | | |
MJD117 | EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. • Low Collector-Emitter Saturation Voltage. • Straight Lead (IPAK, L Suffix) • Complementary to MJD112/L. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | | |
MJD117 | D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP117 | FAIRCHILD 仙童半导体 | | |
MJD117 | TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● Low Collector-Emitter Saturation Voltage ● Complementary to MJD112 | JIANGSU 长电科技 | | |
MJD117 | isc Silicon PNP Darlington Power Transistor DESCRIPTION • High DC current gain • Built-in a damper diode at E-C • Lead formed for surface mount applications(NO suffix) • Straight lead(IPAK,“ －I” suffix) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designe | ISC 无锡固电 | | |
MJD117 | Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features High DC current gain, built-in a damper diode at E-C,electrically similar to popular TIP117. Applications Medium power switching applications. | FOSHAN 蓝箭电子 | | |
MJD117 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications | CDIL | | |
MJD117 | isc Silicon PNP Darlington Power Transistor 文件：385.79 Kbytes Page：3 Pages | ISC 无锡固电 | | |
MJD117 | TRANSISTOR (PNP) 文件：391.1 Kbytes Page：3 Pages | FS | | |
MJD117 | Complementary Darlington Power Transistors 文件：153.95 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | |
MJD117 | Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD117 | Complementary Darlington Power Transistors 文件：144.73 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD117 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：250.7 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | |
MJD117 | Complementary power Darlington transistors 文件：388.17 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | |
MJD117 | 中等功率双极型晶体管 | MCC | | |
MJD117 | 达林顿管 | JSCJ 长晶科技 | | |
MJD117 | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘 描述：TRANS PNP DARL 100V 2A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− | ONSEMI 安森美半导体 | | ||
Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− | ONSEMI 安森美半导体 | | ||
D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP117 | FAIRCHILD 仙童半导体 | | ||
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. • Low Collector-Emitter Saturation Voltage. • Straight Lead (IPAK, L Suffix) • Complementary to MJD112/L. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 | | ||
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications | CDIL | | ||
Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− | ONSEMI 安森美半导体 | | ||
isc Silicon PNP Darlington Power Transistor 文件：385.79 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS PNP DARL 100V 2A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors 文件：144.73 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary power Darlington transistors 文件：388.17 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
Complementary Darlington Power Transistors 文件：144.73 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
6-Pin DIP Optoisolator Transistor Output The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Applications • Appliances, Measuring Instruments • General Purpose Switching Circuits • Programmable Controllers • Portable Electronics • Interfacing | MOTOROLA 摩托罗拉 | | ||
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
| MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTORS(2.0A,60-100V,50W)
| MOSPEC 统懋 | | ||
3-Terminal Adjustable Regulator 文件：469.36 Kbytes Page：15 Pages | NSC 国半 | | ||
3-Terminal Adjustable Regulator 文件：645.23 Kbytes Page：25 Pages | NSC 国半 | |
MJD117产品属性
- 类型
描述
- Marketing Status：
Active
- Grade：
Industrial
- Transistor Polarity：
PNP
- Collector-Emitter Voltage_max(V)：
100
- Collector-Base Voltage_max(V)：
100
- Collector Current_abs_max(A)：
5
- Dc Current Gain_min：
1000
- Dc Current Gain_max：
12000
- Test Condition for hFE (IC)：
4
- Test Condition for hFE (VCE)_spec(V)：
4
- VCE(sat)_max(V)：
2
- Test Condition for VCE(sat) - IC：
4
- Test Condition for VCE(sat) - IB_spec(mA)：
16
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
DPAK |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi |
25+ |
DPAK |
7734 |
样件支持,可原厂排单订货! |
|||
MOT |
2016+ |
TO-252 |
3900 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ON-SEMI |
25+ |
1500 |
公司优势库存 热卖中! |
||||
ON/安森美 |
24+ |
TSSOP |
10000 |
原装进口只做订货 寻找优势渠道合作 |
|||
KEC |
15+ |
TO-251 |
16421 |
全新 发货1-2天 |
|||
ONFAI |
23+ |
TO-252 |
24190 |
原装正品代理渠道价格优势 |
|||
ONFAI |
26+ |
SOT-223 |
86720 |
全新原装正品价格最实惠 承诺假一赔百 |
|||
ON |
24+ |
DPAK4LEADSingleG |
8866 |
MJD117规格书下载地址
MJD117参数引脚图相关
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- MJD31C
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- MJD30C
- MJD3055
- MJD30
- MJD29C
- MJD2955
- MJD29
- MJD253
- MJD243G
- MJD243
- MJD210G
- MJD210
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- MJD200
- MJD148
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- MJD127G
- MJD127(-1,T4)
- MJD127
- MJD122I
- MJD122G
- MJD122(-1,T4)
- MJD122
- MJD117L
- MJD117G
- MJD117(-1,T4)
- MJD112L
- MJD112G
- MJD1121
- MJD112(-1,T4)
- MJD112
- MJ-BNCJ
- MJB6491
- MJB6488
- MJB42CG
- MJB42C
- MJB41CG
- MJB41C
- MJB32C
- MJB32B
- MJB31C
- MJB3055
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- MJ921
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- MJ900
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