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MJD117晶体管资料
MJD117别名：MJD117三极管、MJD117晶体管、MJD117晶体三极管
MJD117生产厂家：韩国三星公司
MJD117制作材料：Darl
MJD117性质：低频或音频放大 （LF）
MJD117封装形式：贴片封装
MJD117极限工作电压：
MJD117最大电流允许值：2A
MJD117最大工作频率：<1MHZ或未知
MJD117引脚数：3
MJD117最大耗散功率：20W
MJD117放大倍数：
MJD117图片代号：G-127
MJD117vtest：0
MJD117htest：999900
- MJD117atest：2
MJD117wtest：20
MJD117代换 MJD117用什么型号代替：
MJD117价格
参考价格：￥1.2879
型号：MJD117-1G 品牌：ONSemi 备注：这里有MJD117多少钱，2025年最近7天走势，今日出价，今日竞价，MJD117批发/采购报价，MJD117行情走势销售排行榜，MJD117报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD117 | Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications | ONSEMI 安森美半导体 |   | |
MJD117 | D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP117 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MJD117 | Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− | ONSEMI 安森美半导体 | | |
MJD117 | EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. • Low Collector-Emitter Saturation Voltage. • Straight Lead (IPAK, L Suffix) • Complementary to MJD112/L. | KEC KEC(Korea Electronics) | | |
MJD117 | COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications | CDIL | | |
MJD117 | isc Silicon PNP Darlington Power Transistor DESCRIPTION • High DC current gain • Built-in a damper diode at E-C • Lead formed for surface mount applications(NO suffix) • Straight lead(IPAK,“ －I” suffix) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designe | ISC 无锡固电 | | |
MJD117 | Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | |
MJD117 | Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | |
MJD117 | TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● Low Collector-Emitter Saturation Voltage ● Complementary to MJD112 | JIANGSU 长电科技 | | |
MJD117 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Lin | STMICROELECTRONICS 意法半导体 | | |
MJD117 | Silicon PNP transistor in a TO-252 Plastic Package. Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features High DC current gain, built-in a damper diode at E-C,electrically similar to popular TIP117. Applications Medium power switching applications. | FOSHAN 蓝箭电子 | | |
MJD117 | TRANSISTOR (PNP) 文件：391.1 Kbytes Page：3 Pages | FS | | |
MJD117 | 中等功率双极型晶体管 | MCC | | |
MJD117 | 达林顿管 | JSCJ 长晶科技 | | |
MJD117 | 2.0 A，100 V，PNP 达林顿双极功率晶体管 | ONSEMI 安森美半导体 | | |
MJD117 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：250.7 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | |
MJD117 | Complementary power Darlington transistors 文件：388.17 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | |
MJD117 | 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：托盘 描述：TRANS PNP DARL 100V 2A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MJD117 | isc Silicon PNP Darlington Power Transistor 文件：385.79 Kbytes Page：3 Pages | ISC 无锡固电 | | |
MJD117 | Complementary Darlington Power Transistors 文件：144.73 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
MJD117 | Complementary Darlington Power Transistors 文件：153.95 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | |
MJD117 | Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− | ONSEMI 安森美半导体 | | ||
Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications | ONSEMI 安森美半导体 | | ||
D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP117 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. • Low Collector-Emitter Saturation Voltage. • Straight Lead (IPAK, L Suffix) • Complementary to MJD112/L. | KEC KEC(Korea Electronics) | | ||
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Power and Switching Applications | CDIL | | ||
Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves ( | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“− | ONSEMI 安森美半导体 | | ||
isc Silicon PNP Darlington Power Transistor 文件：385.79 Kbytes Page：3 Pages | ISC 无锡固电 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS PNP DARL 100V 2A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors 文件：144.73 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary power Darlington transistors 文件：388.17 Kbytes Page：10 Pages | STMICROELECTRONICS 意法半导体 | | ||
Complementary Darlington Power Transistors 文件：101.63 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistors 文件：144.73 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | ||
Electrician’s Multimeter with Non-Contact Voltage Features include: • VoltAlert™ technology for non-contact voltage detection • AutoVolt automatic ac/dc voltage selection • LoZ: helps prevent false readings due to ghost voltage • Large white LED backlight to work in poorly lit areas • True-rms for accurate measurements on non-linear loads • | FLUKE 福禄克 | | ||
RENESAS MCU 文件：867.34 Kbytes Page：114 Pages | RENESAS 瑞萨 | | ||
Point-to-point Wiring 文件：300.88 Kbytes Page：1 Pages | ARIES | | ||
1?쓝1??Stratum 3 OCXO 文件：103.9 Kbytes Page：4 Pages | CTS 西迪斯 | | ||
RENESAS MCU 文件：879.67 Kbytes Page：116 Pages | RENESAS 瑞萨 | |
MJD117产品属性
- 类型
描述
- 型号
MJD117
- 功能描述
达林顿晶体管 2A 100V Bipolar
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
FAIRCHILD/仙童 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST/意法 |
21+ |
NA |
2500 |
只做原装,假一罚十 |
|||
ST/意法 |
24+ |
TO-252 |
504583 |
免费送样原盒原包现货一手渠道联系 |
|||
ON |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
ON(安森美) |
24+ |
TO-252-2(DPAK) |
7314 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
CJ/长电 |
21+ |
TO-252 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
9646 |
5 |
公司优势库存 热卖中! |
|||||
FAIRCHILD/仙童 |
24+ |
TO252 |
8950 |
BOM配单专家,发货快,价格低 |
|||
ON |
23+ |
NA |
23560 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
MJD117规格书下载地址
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