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MJD117晶体管资料
MJD117别名:MJD117三极管、MJD117晶体管、MJD117晶体三极管
MJD117生产厂家:韩国三星公司
MJD117制作材料:Darl
MJD117性质:低频或音频放大 (LF)
MJD117封装形式:贴片封装
MJD117极限工作电压:
MJD117最大电流允许值:2A
MJD117最大工作频率:<1MHZ或未知
MJD117引脚数:3
MJD117最大耗散功率:20W
MJD117放大倍数:
MJD117图片代号:G-127
MJD117vtest:0
MJD117htest:999900
- MJD117atest:2
MJD117wtest:20
MJD117代换 MJD117用什么型号代替:
MJD117价格
参考价格:¥1.2879
型号:MJD117-1G 品牌:ONSemi 备注:这里有MJD117多少钱,2024年最近7天走势,今日出价,今日竞价,MJD117批发/采购报价,MJD117行情走势销售排行榜,MJD117报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MJD117 | ComplementaryDarlingtonPowerTransistors ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJD117 | COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Application ■Lin | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
MJD117 | EPITAXIALPLANARPNPTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.) MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain.:hFE=1000(Min.),VCE=-4V,IC=-1A. •LowCollector-EmitterSaturationVoltage. •StraightLead(IPAK,LSuffix) •ComplementarytoMJD112/L. | KECKEC CORPORATION KEC株式会社 | ||
MJD117 | D-PAKforSurfaceMountApplications D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP117 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MJD117 | TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●LowCollector-EmitterSaturationVoltage ●ComplementarytoMJD112 | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | ||
MJD117 | iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •HighDCcurrentgain •Built-inadamperdiodeatE-C •Leadformedforsurfacemountapplications(NOsuffix) •Straightlead(IPAK,“-I”suffix) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designe | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
MJD117 | SiliconPNPtransistorinaTO-252PlasticPackage. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features HighDCcurrentgain,built-inadamperdiodeatE-C,electricallysimilartopopularTIP117. Applications Mediumpowerswitchingapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | ||
MJD117 | COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications | CDIL CDIL | ||
MJD117 | iscSiliconPNPDarlingtonPowerTransistor 文件:385.79 Kbytes Page:3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
MJD117 | ComplementaryDarlingtonPowerTransistors 文件:153.95 Kbytes Page:10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJD117 | ComplementaryDarlingtonPowerTransistors 文件:144.73 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJD117 | ComplementaryDarlingtonPowerTransistors 文件:101.63 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
MJD117 | COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS 文件:250.7 Kbytes Page:6 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
MJD117 | ComplementarypowerDarlingtontransistors 文件:388.17 Kbytes Page:10 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
MJD117 | TRANSISTOR(PNP) 文件:391.1 Kbytes Page:3 Pages | FS First Silicon Co., Ltd | ||
MJD117 | 封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:托盘 描述:TRANS PNP DARL 100V 2A DPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
ComplementaryDarlingtonPowerTransistors ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryDarlingtonPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves( | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryDarlingtonPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves( | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryDarlingtonPowerTransistors ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
D-PAKforSurfaceMountApplications D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP117 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
EPITAXIALPLANARPNPTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.) MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES •HighDCCurrentGain.:hFE=1000(Min.),VCE=-4V,IC=-1A. •LowCollector-EmitterSaturationVoltage. •StraightLead(IPAK,LSuffix) •ComplementarytoMJD112/L. | KECKEC CORPORATION KEC株式会社 | |||
COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS DesignedforGeneralPurposePowerandSwitchingApplications | CDIL CDIL | |||
ComplementaryDarlingtonPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves( | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryDarlingtonPowerTransistors ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •LeadFormedforSurfaceMountApplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryDarlingtonPowerTransistors Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features •LeadFormedforSurfaceMountApplicationsinPlasticSleeves (NoSuffix) •StraightLeadVersioninPlasticSleeves( | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
iscSiliconPNPDarlingtonPowerTransistor 文件:385.79 Kbytes Page:3 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ComplementaryDarlingtonPowerTransistors 文件:101.63 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryDarlingtonPowerTransistors 文件:101.63 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:管件 描述:TRANS PNP DARL 100V 2A IPAK 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryDarlingtonPowerTransistors 文件:101.63 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryDarlingtonPowerTransistors 文件:144.73 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementarypowerDarlingtontransistors 文件:388.17 Kbytes Page:10 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
ComplementaryDarlingtonPowerTransistors 文件:101.63 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryDarlingtonPowerTransistors 文件:101.63 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryDarlingtonPowerTransistors 文件:144.73 Kbytes Page:8 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Electrician’sMultimeterwithNon-ContactVoltage Featuresinclude: •VoltAlert™technologyfornon-contactvoltagedetection •AutoVoltautomaticac/dcvoltageselection •LoZ:helpspreventfalsereadingsduetoghostvoltage •LargewhiteLEDbacklighttoworkinpoorlylitareas •True-rmsforaccuratemeasurementsonnon-linearloads • | FLUKEFluke Corporation 福禄克公司 | |||
Point-to-pointWiring 文件:300.88 Kbytes Page:1 Pages | ARIES Aries Electronics,inc | |||
1?쓝1??Stratum3OCXO 文件:103.9 Kbytes Page:4 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 | |||
RENESASMCU 文件:867.34 Kbytes Page:114 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
RENESASMCU 文件:879.67 Kbytes Page:116 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |
MJD117产品属性
- 类型
描述
- 型号
MJD117
- 功能描述
达林顿晶体管 2A 100V Bipolar
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
21+ |
NA |
2500 |
只做原装,假一罚十 |
|||
ON/安森美 |
23+ |
DPAK |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
ON/安森美 |
TO252 |
7906200 |
|||||
ST |
23+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
FAIRCHILD/仙童 |
2019+全新原装正品 |
TO252 |
8950 |
BOM配单专家,发货快,价格低 |
|||
ON |
23+ |
SOT-252 |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
CJ |
TO-252-2L |
12500 |
16 |
只做原装进口IOR-TI-ST,可以送样品 |
|||
ON/安森美 |
2105+ |
TO-252 |
10053 |
||||
FAIRCHILD |
23+ |
TO-252 |
12300 |
全新原装真实库存含13点增值税票! |
|||
SOT252 |
1000 |
MJD117规格书下载地址
MJD117参数引脚图相关
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