位置：首页 > IC中文资料第6269页 > MJD117L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJD117L | EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. • Low Collector-Emitter Saturation Voltage. • Straight Lead (IPAK, L Suffix) • Complementary to MJD112/L. | KECKEC(Korea Electronics) 开益禧无锡开益禧半导体有限公司 |   | |
6-Pin DIP Optoisolator Transistor Output The MTIL117 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Applications • Appliances, Measuring Instruments • General Purpose Switching Circuits • Programmable Controllers • Portable Electronics • Interfacing | MOTOROLA 摩托罗拉 | | ||
DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
| MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTORS(2.0A,60-100V,50W)
| MOSPEC 统懋 | | ||
3-Terminal Adjustable Regulator 文件：469.36 Kbytes Page：15 Pages | NSC 国半 | | ||
3-Terminal Adjustable Regulator 文件：645.23 Kbytes Page：25 Pages | NSC 国半 | |
MJD117L产品属性
- 类型
描述
- 型号
MJD117L
- 制造商
KEC
- 制造商全称
KEC(Korea Electronics)
- 功能描述
EPITAXIAL PLANAR PNP TRANSISTOR(MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ONFAI |
23+ |
TO-252 |
24190 |
原装正品代理渠道价格优势 |
|||
ON |
24+ |
DPAK4LEADSingleG |
8866 |
||||
ST |
1650+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ON/安森美 |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
|||
KEC |
23+ |
TO-251 |
50000 |
全新原装正品现货,支持订货 |
|||
ON/安森美 |
24+ |
TSSOP |
10000 |
原装进口只做订货 寻找优势渠道合作 |
|||
ST/意法 |
24+ |
65230 |
|||||
CJ/长电 |
24+ |
TO-252-2L |
50000 |
只做原装，欢迎询价，量大价优 |
|||
ON |
25+ |
DPAK2WSMTPBF |
188600 |
全新原厂原装正品现货 欢迎咨询 |
MJD117L规格书下载地址
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