Monolithic Construction With Built In Base- Emitter Shunt Resistors

Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -1A (Min.) • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP110/111/112

Plastic Medium-Power Complementary Silicon Transistors

Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS

PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications

Silicon Power darlington Complementary transistors

PNP Epitaxial Silicon Darlington Transistors

Features • High DC Current Gain : hFE=1000 @ VCE=4.0V, IC=1.0A(Min.) • Low Collector-Emitter Saturation Voltage • Complementary to TIP110/111/112 • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designat RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating

POWER TRANSISTORS(2.0A,60-100V,50W)

DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), ＠VCE=-4V, IC=-1A. • Low Collector-Emitter Saturation Voltage. • Complementary to TIP112.

TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR

Description Designed for use in general purpose amplifier and low-speed switching applications. Pinning 1 = Base 2 = Collector 3 = Emitter

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP110/111/112 APPLICATIONS • For industrial use

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● Low Collector-Emitter Saturation Voltage ● Complementary to TIP112

PLASTIC MEDIUM-POWER COPLEMENTARY SILICON TRANSISTORS

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP110, TIP111 and TIP112 ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 500 at 4 V, 2 A

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • High DC current gain • Low collector saturation voltage • Complement to type TIP110/111/112 APPLICATIONS • For industrial use

Darlington Power Transistors (PNP)

Features • Designed for general-purpose amplifier and low speed switching applications • RoHS Compliant

PNP SILICON POWER DARLINGTONS

PLASTIC POWER TRANSISTORS Intended for use in Medium Power Linear and Switching Applications

PNP Transistor Bare Die

Features Collector current up to 2A Low VCE(sat) Very high hFE Solderable back metal High Reliability tested grades for Military + Space

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. The complementary PNP types are TIP115 and TIP117. ■ STMicroe

TO-220-3L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage Complementary to TIP112

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Medium Power Linear and Switching Applications TO-220 Plastic Package

SILICON DARLINGTON POWER TRANSISTORS

SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are designed for general purpose amplifier and low-speed switching applications. NPN complements are TIP110-111-112 Compliance to RoHS.

100V,2A,Medium Power PNP Bipolar Transistor

中等功率双极型晶体管

达林顿管

Silicon PNP transistor in a TO-220 Plastic Package.

文件：1.24325 Mbytes Page：6 Pages

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP DARL 100V 2A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP DARL 100V 2A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Darlington Power Transistors

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TO-220 - Power Transistors and Darlingtons

文件：76.15 Kbytes Page：3 Pages

PNP Epitaxial Silicon Darlington Transistors

文件：378.73 Kbytes Page：2 Pages

PNP Epitaxial Silicon Darlington Transistors

文件：467.85 Kbytes Page：2 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：148.66 Kbytes Page：8 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：99.95 Kbytes Page：8 Pages

EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES • High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. • Low Collector-Emitter Saturation Voltage. • Complementary to TIP112F.

PLASTIC POWER TRANSISTORS

Intended for use in Medium Power Linear and Switching Applications

EPITAXIAL PLANAR PNP TRANSISTOR

文件：462.65 Kbytes Page：2 Pages

EPITAXIAL PLANAR PNP TRANSISTOR

文件：462.65 Kbytes Page：2 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：148.66 Kbytes Page：8 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：99.95 Kbytes Page：8 Pages

Electrician’s Multimeter with Non-Contact Voltage

Features include: • VoltAlert™ technology for non-contact voltage detection • AutoVolt automatic ac/dc voltage selection • LoZ: helps prevent false readings due to ghost voltage • Large white LED backlight to work in poorly lit areas • True-rms for accurate measurements on non-linear loads •

RENESAS MCU

文件：867.34 Kbytes Page：114 Pages

Point-to-point Wiring

文件：300.88 Kbytes Page：1 Pages

1?쓝1??Stratum 3 OCXO

文件：103.9 Kbytes Page：4 Pages

RENESAS MCU

文件：879.67 Kbytes Page：116 Pages