位置：首页 > IC中文资料第926页 > MJ150
MJ150晶体管资料
MJ15001别名：MJ15001三极管、MJ15001晶体管、MJ15001晶体三极管
MJ15001生产厂家：美国无线电公司
MJ15001制作材料：
MJ15001性质：低频或音频放大 （LF）_功率放大 （PA）
MJ15001封装形式：直插封装
MJ15001极限工作电压：140V
MJ15001最大电流允许值：15A
MJ15001最大工作频率：<1MHZ或未知
MJ15001引脚数：2
MJ15001最大耗散功率：200W
MJ15001放大倍数：
MJ15001图片代号：E-44
MJ15001vtest：140
MJ15001htest：999900
- MJ15001atest：15
MJ15001wtest：200
MJ15001代换 MJ15001用什么型号代替：BDY37,2B5634,2SC2220,2SC2403,2SD373,3DK210C,
MJ150价格
参考价格：￥13.6071
型号：MJ15001G 品牌：ON 备注：这里有MJ150多少钱，2025年最近7天走势，今日出价，今日竞价，MJ150批发/采购报价，MJ150行情走势销售排行榜，MJ150报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to MJ15002 | WINGS 永盛电子 |   | ||
POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase™ power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) − 5.0 A @ 40 V | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase™ power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) − 5.0 A @ 40 V | ONSEMI 安森美半导体 | | ||
Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS(20A,140V,250W) 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 250 WATTS | MOSPEC 统懋 | | ||
20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS MJ15003 NPN MJ15004 PNP The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100 Tested) — | Motorola 摩托罗拉 | | ||
Silicon Complimentary Power Transistor VCEO 140V, IC 20A, 250W, TO-3 Features High DC Current Gain - hFE = 1000 (Min.) @ lc=25A DC hFE = 400 (Min) @ lc= 50 Adc 2. Curves to 100 A (Pulsed) 3. Diode Protection to Rated lc 4. Monolithic Construction with Built-In Base-Emitter Shunt Resistor 5. Junction Temperature to +200°C APPLICATIONS: For use as output devi | MULTICOMP 易络盟 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15004 • Excellent safe operating area APPLICATIONS • For high power audio,disk head positioners and other linear applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15004 • Excellent safe operating area APPLICATIONS • For high power audio,disk head positioners and other linear applications | SAVANTIC | | ||
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to MJ15004 | WINGS 永盛电子 | | ||
Complementary Silicon power transistors (20A / 140V / 250W) DESCRIPTION The MJ15003 is a silicon epitaxial-base planar NPN transistor mounted in JEDEC TO-3 metal case. lt is designed for high power audio, disk head positioners and other linear applications. The complementary PNP type is MJ15004. FEATURES ● Designed for general-purpose switching and amp | NELLSEMI 尼尔半导体 | | ||
Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS(20A,140V,250W) 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 250 WATTS | MOSPEC 统懋 | | ||
20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS MJ15003 NPN MJ15004 PNP The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100 Tested) — | Motorola 摩托罗拉 | | ||
Silicon Complimentary Power Transistor VCEO 140V, IC 20A, 250W, TO-3 Features High DC Current Gain - hFE = 1000 (Min.) @ lc=25A DC hFE = 400 (Min) @ lc= 50 Adc 2. Curves to 100 A (Pulsed) 3. Diode Protection to Rated lc 4. Monolithic Construction with Built-In Base-Emitter Shunt Resistor 5. Junction Temperature to +200°C APPLICATIONS: For use as output devi | MULTICOMP 易络盟 | | ||
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER High Current Capability High Power Dissipation Complementary to MJ15015 | WINGS 永盛电子 | | ||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ15003 ·Excellent safe operating area APPLICATIONS ·For high power audio,disk head positioners and other linear applications | SAVANTIC | | ||
Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 | | ||
Complementary Silicon Power Transistors MJ15011(NPN, MJ15012(PNP) 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circui | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-: hFE= 20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage-: VCE(sat)= 2.5V(Max)@ IC = 4A ·Complement to Type MJ15012 APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications. | ISC 无锡固电 | | ||
Complementary Silicon Power Transistors MJ15011(NPN, MJ15012(PNP) 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circui | ONSEMI 安森美半导体 | | ||
Complementary Silicon Power Transistors MJ15011(NPN, MJ15012(PNP) 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circui | ONSEMI 安森美半导体 | | ||
Complementary Silicon Power Transistors MJ15011(NPN, MJ15012(PNP) 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circui | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS(15A) 2N3055A(NPN) MJ15015(NPN) MJ2955A(PNP) NJ15016(PNP) | MOSPEC 统懋 | | ||
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 2N3055A,MJ15015 --> NPN MJ15016,MJ2955A --> PNP 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR 60, 120 VOLTS 115, 180 WATTS | boca 博卡 | | ||
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d | Motorola 摩托罗拉 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15016 • Excellent safe operating area APPLICATIONS • For high power audio ,stepping motor and other linear applications • Relay or solenoid drviers • DC-DC converters inverters | SAVANTIC | | ||
COMPLEMENTARY SILICON HIGH - POWER TRANSISTORS 2N3055A,MJ15015 --> NPN MJ15016,MJ2955A --> PNP 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR 60, 120 VOLTS 115, 180 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon Epitaxial Planar Transistor GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a metal envelope, primarily for use in audio and general purpose | WINGS 永盛电子 | | ||
Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe oper | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS 2N3055A,MJ15015 --> NPN MJ15016,MJ2955A --> PNP 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR 60, 120 VOLTS 115, 180 WATTS | boca 博卡 | | ||
POWER TRANSISTORS(15A) 2N3055A(NPN) MJ15015(NPN) MJ2955A(PNP) NJ15016(PNP) | MOSPEC 统懋 | | ||
15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d | Motorola 摩托罗拉 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, d | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON HIGH - POWER TRANSISTORS 2N3055A,MJ15015 --> NPN MJ15016,MJ2955A --> PNP 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTOR 60, 120 VOLTS 115, 180 WATTS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15015 • Excellent safe operating area APPLICATIONS • For high power audio ,stepping motor and other linear applications • Relay or solenoid drviers • DC-DC converters inverters | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15015 • Excellent safe operating area APPLICATIONS • For high power audio ,stepping motor and other linear applications • Relay or solenoid drviers • DC-DC converters inverters | ISC 无锡固电 | | ||
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to MJ15015 | WINGS 永盛电子 | | ||
Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc−to−dc converters, inverters, or for inductive loads requiring higher safe oper | ONSEMI 安森美半导体 | | ||
4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS . . . designed for use as high frequency drivers in Audio Amplifiers. • High Gain Complementary Silicon Power Transistors • Safe Operating Area 100 Tested 50 V, 3.0 A, 1.0 Sec. • Excellent Frequency | Motorola 摩托罗拉 | | ||
4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS . . . designed for use as high frequency drivers in Audio Amplifiers. • High Gain Complementary Silicon Power Transistors • Safe Operating Area 100 Tested 50 V, 3.0 A, 1.0 Sec. • Excellent Frequency | Motorola 摩托罗拉 | | ||
Complementary Silicon Power Transistors 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 −250 VOLTS, 150 WATTS MJ15020 − NPN MJ15021 − PNP Complementary Silicon Power Transistors These transistors are designed for use as high frequency drivers in Audio Amplifiers. Features •High Gain Complementary Silicon | ONSEMI 安森美半导体 | | ||
4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS . . . designed for use as high frequency drivers in Audio Amplifiers. • High Gain Complementary Silicon Power Transistors • Safe Operating Area 100 Tested 50 V, 3.0 A, 1.0 Sec. • Excellent Frequency | Motorola 摩托罗拉 | | ||
Complementary Silicon Power Transistors 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 −250 VOLTS, 150 WATTS MJ15020 − NPN MJ15021 − PNP Complementary Silicon Power Transistors These transistors are designed for use as high frequency drivers in Audio Amplifiers. Features •High Gain Complementary Silicon | ONSEMI 安森美半导体 | | ||
Complementary Silicon Power Transistors 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 −250 VOLTS, 150 WATTS MJ15020 − NPN MJ15021 − PNP Complementary Silicon Power Transistors These transistors are designed for use as high frequency drivers in Audio Amplifiers. Features •High Gain Complementary Silicon | ONSEMI 安森美半导体 | | ||
4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 AND 250 VOLTS 150 WATTS . . . designed for use as high frequency drivers in Audio Amplifiers. • High Gain Complementary Silicon Power Transistors • Safe Operating Area 100 Tested 50 V, 3.0 A, 1.0 Sec. • Excellent Frequency | Motorola 摩托罗拉 | | ||
Complementary Silicon Power Transistors 4.0 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 200 −250 VOLTS, 150 WATTS MJ15020 − NPN MJ15021 − PNP Complementary Silicon Power Transistors These transistors are designed for use as high frequency drivers in Audio Amplifiers. Features •High Gain Complementary Silicon | ONSEMI 安森美半导体 | | ||
Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) − 2 A @ 80 V • High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | ||
SILICON POWER TRANSISTORS The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) − 2 A @ 80 V • High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | ||
POWER TRANSISTOR(16A,200-250V,250W) Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. FEATURES • High Safe Operating Area • High DCCurrent Gain- hFE = 15 (Min) @ Ic = 8.0 A VCE = 4.0 V | MOSPEC 统懋 | | ||
Silicon Power Transistors SILICON POWER TRANSISTORS The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100 Tested) — 2 A @ 80 V • High DC Current Gain — hFE = 15 (Min) @ IC = 8 Adc | Motorola 摩托罗拉 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15023; MJ15025 • Excellent safe operating area • High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS • Designed for high power audio, disk head positioners and other linear applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15023; MJ15025 • Excellent safe operating area • High DC current gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS • Designed for high power audio, disk head positioners and other linear applications | SAVANTIC | | ||
Silicon Power Transistors Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) - 2 A @ 80 V • High DCCurrent Gain - hFE = 15 (Min) @ Ic = 8 Adc | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15023 MJ15025 • Excellent Safe Operating Area • High DC Current Gain hFE = 15 (Min) @ IC = 8 Adc APPLICATIONS • Designed for high power audio, disk head positioners and other linear applications | JMNIC 锦美电子 | | ||
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to MJ15023 | WINGS 永盛电子 | | ||
Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) − 2 A @ 80 V • High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | | ||
Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) − 2 A @ 80 V • High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | |
MJ150产品属性
- 类型
描述
- 型号
MJ150
- 功能描述
两极晶体管 - BJT 15A 140V 200W NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
2025+ |
TO-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
ON |
22+ |
BGA |
3000 |
原装正品,支持实单 |
|||
MOT |
25+ |
3 |
公司优势库存 热卖中!! |
||||
ON/安森美 |
专业铁帽 |
TO-3 |
1300 |
原装铁帽专营,代理渠道量大可订货 |
|||
PEC |
05+ |
原厂原装 |
218 |
只做全新原装真实现货供应 |
|||
ON/安森美 |
2023+ |
SMD |
1000 |
全新原装正品,优势价格 |
|||
ANY |
新 |
77 |
全新原装 货期两周 |
||||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ONS |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
MOT |
24+ |
TO-3 |
5000 |
MJ150芯片相关品牌
MJ150规格书下载地址
MJ150参数引脚图相关
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- nand闪存
- n74
- n100
- mxt
- murata
- mt7201
- mt6795
- msm8625q
- msm7227a
- MP4
- MP3
- mos晶体管
- mos管
- MOSFET
- molex连接器
- MJ2267
- MJ2254
- MJ2253
- MJ2252
- MJ2251
- MJ2250
- MJ2249
- MJ1800
- MJ16018
- MJ16006A
- MJ16006
- MJ16002A
- MJ16002
- MJ15O04
- MJ150BK100
- MJ15027
- MJ15026
- MJ15025
- MJ15024
- MJ15023
- MJ15022
- MJ15021
- MJ15020
- MJ15019
- MJ15018
- MJ15016
- MJ15015
- MJ15012
- MJ15011
- MJ15004
- MJ15003
- MJ15002
- MJ15001
- MJ1500
- MJ1440
- MJ14003
- MJ14002
- MJ14001
- MJ14000
- MJ13335
- MJ13334
- MJ13333
- MJ13332
- MJ13331
- MJ13330
- MJ13101
- MJ13100
- MJ13091
- MJ13090
- MJ13081
- MJ13080
- MJ13071
- MJ13070
- MJ1302A
- MJ13015
- MJ13014
- MJ12010
- MJ1201
- MJ12005
- MJ12004
- MJ12003
- MJ12002
- MJ1200
- MJ11033
- MJ11032
- MJ11031
- MJ11030
- MJ11029
- MJ11028
MJ150数据表相关新闻
MIXA60W1200TED IGBT 模块
MIXA60W1200TED IGBT 模块 Six-Pack XPT IGBT
2023-2-23MIXA30W1200TED IGBT 模块
MIXA30W1200TED IGBT 模块 Six-Pack XPT IGBT
2023-2-23MJD32CT4G
MJD32CT4G，全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三，V:八七六八零五五八.
2021-7-1MJD127T4 ON原厂授权经销商
进口原装，国产代理，海量库存，产品齐全，货源渠道百分百正品
2020-6-18MJ11016
MJ11016，全新原装当天发货或门市自取0755-82732291.
2019-12-13mjd31ct4g亚太地区代理商，绝对优势！！
深圳市拓亿芯电子 正品销售mjd31ct4g
2019-11-1
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
