Silicon NPN Power Transistor

DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-: hFE= 20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage-: VCE(sat)= 2.5V(Max)@ IC = 4A ·Complement to Type MJ15012 APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications.

Complementary Silicon Power Transistors

MJ15011(NPN, MJ15012(PNP) 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circui

10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS

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Complementary Silicon Power Transistors

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Trans GP BJT NPN 250V 10A 3-Pin(2+Tab) TO-204 Tray

音频功放晶体管

三极管

Complementary Silicon Power Transistors

MJ15011(NPN, MJ15012(PNP) 10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching circui

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 250V 10A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE

DESCRIPTION Dedicated to telecommunication equipment protection, these devices provide a triple bidirectional protection function. They ensure the same protection capability with the same breakdown voltage both in longitudinal mode and transversal mode. ■ BIDIRECTIONAL CROWBAR PROTECTION BETWEE

TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE

DESCRIPTION Dedicated to telecommunication equipment protection, these devices provide a triple bidirectional protection function. They ensure the same protection capability with the same breakdown voltage both in longitudinal mode and transversal mode. ■ BIDIRECTIONAL CROWBAR PROTECTION BETWEE

1.5A ULTRA-FAST RECTIFIER

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