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MJ1500晶体管资料
MJ15001别名:MJ15001三极管、MJ15001晶体管、MJ15001晶体三极管
MJ15001生产厂家:美国无线电公司
MJ15001制作材料:
MJ15001性质:低频或音频放大 (LF)_功率放大 (PA)
MJ15001封装形式:直插封装
MJ15001极限工作电压:140V
MJ15001最大电流允许值:15A
MJ15001最大工作频率:<1MHZ或未知
MJ15001引脚数:2
MJ15001最大耗散功率:200W
MJ15001放大倍数:
MJ15001图片代号:E-44
MJ15001vtest:140
MJ15001htest:999900
- MJ15001atest:15
MJ15001wtest:200
MJ15001代换 MJ15001用什么型号代替:BDY37,2B5634,2SC2220,2SC2403,2SD373,3DK210C,
MJ1500价格
参考价格:¥13.6071
型号:MJ15001G 品牌:ON 备注:这里有MJ1500多少钱,2026年最近7天走势,今日出价,今日竞价,MJ1500批发/采购报价,MJ1500行情走势销售排行榜,MJ1500报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJ1500 | NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to MJ15002 | WINGS 永盛电子 | ||
MJ1500 | NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) | WINGS 永盛电子 | ||
POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase™ power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) − 5.0 A @ 40 V | ONSEMI 安森美半导体 | |||
POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase™ power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) − 5.0 A @ 40 V | ONSEMI 安森美半导体 | |||
POWER TRANSISTORS(20A,140V,250W) 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 250 WATTS | MOSPEC 统懋 | |||
20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS MJ15003 NPN MJ15004 PNP The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100 Tested) — | MOTOROLA 摩托罗拉 | |||
Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 | |||
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to MJ15004 | WINGS 永盛电子 | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15004 • Excellent safe operating area APPLICATIONS • For high power audio,disk head positioners and other linear applications | SAVANTIC | |||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type MJ15004 • Excellent safe operating area APPLICATIONS • For high power audio,disk head positioners and other linear applications | ISC 无锡固电 | |||
Complementary Silicon power transistors (20A / 140V / 250W) DESCRIPTION The MJ15003 is a silicon epitaxial-base planar NPN transistor mounted in JEDEC TO-3 metal case. lt is designed for high power audio, disk head positioners and other linear applications. The complementary PNP type is MJ15004. FEATURES ● Designed for general-purpose switching and amp | NELLSEMI 尼尔半导体 | |||
Silicon Complimentary Power Transistor VCEO 140V, IC 20A, 250W, TO-3 Features High DC Current Gain - hFE = 1000 (Min.) @ lc=25A DC hFE = 400 (Min) @ lc= 50 Adc 2. Curves to 100 A (Pulsed) 3. Diode Protection to Rated lc 4. Monolithic Construction with Built-In Base-Emitter Shunt Resistor 5. Junction Temperature to +200°C APPLICATIONS: For use as output devi | MULTICOMP 易络盟 | |||
Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 | |||
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER High Current Capability High Power Dissipation Complementary to MJ15015 | WINGS 永盛电子 | |||
POWER TRANSISTORS(20A,140V,250W) 20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 250 WATTS | MOSPEC 统懋 | |||
20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS MJ15003 NPN MJ15004 PNP The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100 Tested) — | MOTOROLA 摩托罗拉 | |||
Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type MJ15003 ·Excellent safe operating area APPLICATIONS ·For high power audio,disk head positioners and other linear applications | SAVANTIC | |||
Silicon Complimentary Power Transistor VCEO 140V, IC 20A, 250W, TO-3 Features High DC Current Gain - hFE = 1000 (Min.) @ lc=25A DC hFE = 400 (Min) @ lc= 50 Adc 2. Curves to 100 A (Pulsed) 3. Diode Protection to Rated lc 4. Monolithic Construction with Built-In Base-Emitter Shunt Resistor 5. Junction Temperature to +200°C APPLICATIONS: For use as output devi | MULTICOMP 易络盟 | |||
Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* | ONSEMI 安森美半导体 | |||
Silicon NPN Power Transistors 文件:111.19 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon NPN Power Transistors 文件:129.669 Kbytes Page:3 Pages | ISC 无锡固电 | |||
15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS 文件:165.74 Kbytes Page:4 Pages | MOTOROLA 摩托罗拉 | |||
Complementary Silicon Power Transistors 文件:71.6 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Silicon NPN Power Transistors 文件:112.78 Kbytes Page:3 Pages | SAVANTIC | |||
Complementary Silicon Power Transistors 文件:114.26 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
音频功放晶体管 | THUNDERSOFT 中科创达 | |||
三极管 | MOSPEC 统懋 | |||
Complementary Silicon Power Transistors 文件:71.6 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Complementary Silicon Power Transistors 文件:114.26 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Complementary Silicon Power Transistors 文件:71.6 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-204AA,TO-3 包装:管件 描述:TRANS NPN 140V 15A TO204 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
Complementary Silicon Power Transistors 文件:114.26 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Silicon NPN Power Transistors 文件:113.16 Kbytes Page:3 Pages | SAVANTIC | |||
封装/外壳:TO-204AA,TO-3 包装:托盘 描述:TRANS PNP 140V 15A TO204 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
Complementary Silicon Power Transistors 文件:114.26 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Complementary Silicon Power Transistors 文件:71.6 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Silicon PNP Power Transistors 文件:129.78 Kbytes Page:3 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistors 文件:111.58 Kbytes Page:3 Pages | SAVANTIC | |||
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) 文件:27.25 Kbytes Page:1 Pages | WINGS 永盛电子 | |||
Complementary Silicon Power Transistors 文件:114.26 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Complementary Silicon Power Transistors 文件:71.6 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Silicon NPN Power Transistors 文件:112.7 Kbytes Page:3 Pages | SAVANTIC | |||
Complementary Silicon Power Transistors 文件:107.82 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Complementary Silicon Power Transistors 文件:125.08 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Complementary Silicon Power Transistors 文件:107.82 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Complementary Silicon Power Transistors 文件:107.82 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Complementary Silicon Power Transistors 文件:107.82 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
Silicon PNP Power Transistors 文件:129.72 Kbytes Page:3 Pages | ISC 无锡固电 | |||
Silicon NPN Power Transistors 文件:112.94 Kbytes Page:3 Pages | SAVANTIC | |||
Complementary Silicon Power Transistors 文件:107.82 Kbytes Page:4 Pages | ONSEMI 安森美半导体 | |||
MICROWAVE POWER TRANSISTOR The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Herme | MOTOROLA 摩托罗拉 | |||
Integrated Circuit 7-Step LED Driver Circuit Description: The NTE1500 and NTE1501 are integrated circuits designed for driving 7–dot LED displays. The NTE1500 responds logarithmically to the input signal while the NTE1501 responds linearly. Because an adjustment pin for output current is provided, the brightness of the LED can be controll | NTE | |||
N-CHANNEL POWER MOS FET ARRAY SWITCHING USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
N-CHANNEL POWER MOS FET ARRAY SWITCHING USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
N-CHANNEL POWER MOS FET ARRAY SWITCHING USE SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 |
MJ1500产品属性
- 类型
描述
- 型号
MJ1500
- 功能描述
两极晶体管 - BJT 15A 140V 200W NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-204 |
977 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
onsemi |
25+ |
TO-204(TO-3) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
MOT |
23+ |
NA |
20000 |
全新原装假一赔十 |
|||
MOTOROLA/实单来谈出售 |
25+ |
TO-3 |
32360 |
MOTOROLA/实单来谈出售全新特价MJ15004即刻询购立享优惠#长期有货 |
|||
ON进口原装 |
24+ |
TO-3 |
65000 |
原装现货/放心购买 |
|||
M |
24+ |
TO 3 |
157344 |
明嘉莱只做原装正品现货 |
|||
MOT |
96 |
TO-3 |
631 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOT |
24+ |
32350 |
深圳存库原装现货 |
||||
MOTOROLA/摩托罗拉 |
2223+ |
TO-3 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ONS |
2018+ |
26976 |
代理原装现货/特价热卖! |
MJ1500规格书下载地址
MJ1500参数引脚图相关
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- MJ12003
- MJ12002
- MJ1200
- MJ11033
- MJ11032
- MJ11031
- MJ11030
- MJ11029
- MJ11028
MJ1500数据表相关新闻
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