MJ1500晶体管资料

  • MJ15001别名:MJ15001三极管、MJ15001晶体管、MJ15001晶体三极管

  • MJ15001生产厂家:美国无线电公司

  • MJ15001制作材料

  • MJ15001性质:低频或音频放大 (LF)_功率放大 (PA)

  • MJ15001封装形式:直插封装

  • MJ15001极限工作电压:140V

  • MJ15001最大电流允许值:15A

  • MJ15001最大工作频率:<1MHZ或未知

  • MJ15001引脚数:2

  • MJ15001最大耗散功率:200W

  • MJ15001放大倍数

  • MJ15001图片代号:E-44

  • MJ15001vtest:140

  • MJ15001htest:999900

  • MJ15001atest:15

  • MJ15001wtest:200

  • MJ15001代换 MJ15001用什么型号代替:BDY37,2B5634,2SC2220,2SC2403,2SD373,3DK210C,

MJ1500价格

参考价格:¥13.6071

型号:MJ15001G 品牌:ON 备注:这里有MJ1500多少钱,2026年最近7天走势,今日出价,今日竞价,MJ1500批发/采购报价,MJ1500行情走势销售排行榜,MJ1500报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJ1500

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to MJ15002

WINGS

永盛电子

MJ1500

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

WINGS

永盛电子

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase™ power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) − 5.0 A @ 40 V

ONSEMI

安森美半导体

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase™ power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area (100 Tested) − 5.0 A @ 40 V

ONSEMI

安森美半导体

POWER TRANSISTORS(20A,140V,250W)

20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 250 WATTS

MOSPEC

统懋

20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS

20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS MJ15003 NPN MJ15004 PNP The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100 Tested) —

MOTOROLA

摩托罗拉

Complementary Silicon Power Transistors

The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation • Complementary to MJ15004

WINGS

永盛电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type MJ15004 • Excellent safe operating area APPLICATIONS • For high power audio,disk head positioners and other linear applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type MJ15004 • Excellent safe operating area APPLICATIONS • For high power audio,disk head positioners and other linear applications

ISC

无锡固电

Complementary Silicon power transistors (20A / 140V / 250W)

DESCRIPTION The MJ15003 is a silicon epitaxial-base planar NPN transistor mounted in JEDEC TO-3 metal case. lt is designed for high power audio, disk head positioners and other linear applications. The complementary PNP type is MJ15004. FEATURES ● Designed for general-purpose switching and amp

NELLSEMI

尼尔半导体

Silicon Complimentary Power Transistor VCEO 140V, IC 20A, 250W, TO-3

Features High DC Current Gain - hFE = 1000 (Min.) @ lc=25A DC hFE = 400 (Min) @ lc= 50 Adc 2. Curves to 100 A (Pulsed) 3. Diode Protection to Rated lc 4. Monolithic Construction with Built-In Base-Emitter Shunt Resistor 5. Junction Temperature to +200°C APPLICATIONS: For use as output devi

MULTICOMP

易络盟

Complementary Silicon Power Transistors

The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER High Current Capability High Power Dissipation Complementary to MJ15015

WINGS

永盛电子

POWER TRANSISTORS(20A,140V,250W)

20 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 140 VOLTS 250 WATTS

MOSPEC

统懋

20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS

20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 250 WATTS MJ15003 NPN MJ15004 PNP The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area (100 Tested) —

MOTOROLA

摩托罗拉

Complementary Silicon Power Transistors

The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type MJ15003 ·Excellent safe operating area APPLICATIONS ·For high power audio,disk head positioners and other linear applications

SAVANTIC

Silicon Complimentary Power Transistor VCEO 140V, IC 20A, 250W, TO-3

Features High DC Current Gain - hFE = 1000 (Min.) @ lc=25A DC hFE = 400 (Min) @ lc= 50 Adc 2. Curves to 100 A (Pulsed) 3. Diode Protection to Rated lc 4. Monolithic Construction with Built-In Base-Emitter Shunt Resistor 5. Junction Temperature to +200°C APPLICATIONS: For use as output devi

MULTICOMP

易络盟

Complementary Silicon Power Transistors

The MJ15003 and MJ15004 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant*

ONSEMI

安森美半导体

Silicon NPN Power Transistors

文件:111.19 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:129.669 Kbytes Page:3 Pages

ISC

无锡固电

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 VOLTS 200 WATTS

文件:165.74 Kbytes Page:4 Pages

MOTOROLA

摩托罗拉

Complementary Silicon Power Transistors

文件:71.6 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Silicon NPN Power Transistors

文件:112.78 Kbytes Page:3 Pages

SAVANTIC

Complementary Silicon Power Transistors

文件:114.26 Kbytes Page:4 Pages

ONSEMI

安森美半导体

音频功放晶体管

THUNDERSOFT

中科创达

三极管

MOSPEC

统懋

Complementary Silicon Power Transistors

文件:71.6 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

文件:114.26 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

文件:71.6 Kbytes Page:4 Pages

ONSEMI

安森美半导体

封装/外壳:TO-204AA,TO-3 包装:管件 描述:TRANS NPN 140V 15A TO204 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

文件:114.26 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Silicon NPN Power Transistors

文件:113.16 Kbytes Page:3 Pages

SAVANTIC

封装/外壳:TO-204AA,TO-3 包装:托盘 描述:TRANS PNP 140V 15A TO204 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

文件:114.26 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

文件:71.6 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Silicon PNP Power Transistors

文件:129.78 Kbytes Page:3 Pages

ISC

无锡固电

Silicon PNP Power Transistors

文件:111.58 Kbytes Page:3 Pages

SAVANTIC

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

文件:27.25 Kbytes Page:1 Pages

WINGS

永盛电子

Complementary Silicon Power Transistors

文件:114.26 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

文件:71.6 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Silicon NPN Power Transistors

文件:112.7 Kbytes Page:3 Pages

SAVANTIC

Complementary Silicon Power Transistors

文件:107.82 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

文件:125.08 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Complementary Silicon Power Transistors

文件:107.82 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

文件:107.82 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

文件:107.82 Kbytes Page:4 Pages

ONSEMI

安森美半导体

Silicon PNP Power Transistors

文件:129.72 Kbytes Page:3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件:112.94 Kbytes Page:3 Pages

SAVANTIC

Complementary Silicon Power Transistors

文件:107.82 Kbytes Page:4 Pages

ONSEMI

安森美半导体

MICROWAVE POWER TRANSISTOR

The RF Line Microwave Pulse Power Transistor Designed for 1025–1150 MHz pulse common base amplifier applications such as DME. • Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 5.2 dB Min • 100 Tested for Load Mismatch at All Phase Angles with 10:1 VSWR • Herme

MOTOROLA

摩托罗拉

Integrated Circuit 7-Step LED Driver Circuit

Description: The NTE1500 and NTE1501 are integrated circuits designed for driving 7–dot LED displays. The NTE1500 responds logarithmically to the input signal while the NTE1501 responds linearly. Because an adjustment pin for output current is provided, the brightness of the LED can be controll

NTE

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MJ1500产品属性

  • 类型

    描述

  • 型号

    MJ1500

  • 功能描述

    两极晶体管 - BJT 15A 140V 200W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2026-3-16 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TO-204
977
原厂订货渠道,支持BOM配单一站式服务
onsemi
25+
TO-204(TO-3)
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
MOT
23+
NA
20000
全新原装假一赔十
MOTOROLA/实单来谈出售
25+
TO-3
32360
MOTOROLA/实单来谈出售全新特价MJ15004即刻询购立享优惠#长期有货
ON进口原装
24+
TO-3
65000
原装现货/放心购买
M
24+
TO 3
157344
明嘉莱只做原装正品现货
MOT
96
TO-3
631
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MOT
24+
32350
深圳存库原装现货
MOTOROLA/摩托罗拉
2223+
TO-3
26800
只做原装正品假一赔十为客户做到零风险
ONS
2018+
26976
代理原装现货/特价热卖!

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