SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package

DESCRIPTION The MGF4953B super-low noise HEMT (High Electron Mobility Transistor) is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. FEATURES Low noise figure @ f=20GHz NFmin. = 0.55dB (Typ.) High associated gain @ f=20GHz

High Frequency Devices-GaAs High Frequency Devices Low Noise GaAs HEMTs MGF4953B

Low Noise GaAs HEMT

文件：159.83 Kbytes Page：6 Pages

Dual P-Channel -30V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

Dual P-Channel 20-V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4953 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application

Dual P-Channel 30-V (D-S) MOSFET

文件：1.0646 Mbytes Page：9 Pages

P-Channel Enhancement Mode Power MOSFET

文件：536.32 Kbytes Page：5 Pages