General Description

These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor’s advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

• -4.9 A, -30 V. RDS(on) = 0.053 Ω @ VGS = -10 V RDS(on) = 0.095 Ω @ VGS = -4.5 V.

• Low gate charge.

• Fast switching speed.

• High power and current handling capability.

Applications

• Battery switch

• Load switch

• Motor controls