Dual P-Channel Enhancement Mode MOSFET

General Description These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor’s advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery po

Dual P-Channel 30-V(D-S) MOSFET

Dual P-Channel 30-V(D-S) MOSFET FEATURES • 100 Rg Tested

Dual P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.9 A (VGS =-10V) ● RDS(ON)

Dual P-Channel MOSFET

■ Features ● VDS (V) =-30V ● ID =-4.9 A (VGS =-10V) ● RDS(ON)

Dual P-Channel 30-V(D-S) MOSFET

Dual P-Channel 30-V(D-S) MOSFET FEATURES • 100 Rg Tested

Dual P-Channel 30-V (D-S) MOSFET

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Dual P-Channel -30V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

Dual P-Channel 20-V(D-S) MOSFET

General FEATURE ●TrenchFET Power MOSFET ●Lead free product is acquired ●Surface mount package APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The GSS4953 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application

Dual P-Channel 30-V (D-S) MOSFET

文件：1.0646 Mbytes Page：9 Pages

P-Channel Enhancement Mode Power MOSFET

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