General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Features

· –5 A, –30 V RDS(ON) = 55 mW @ VGS = –10 V

RDS(ON) = 95 mW @ VGS = –4.5 V

· Low gate charge (6nC typical)

· Fast switching speed

· High performance trench technology for extremely low RDS(ON)

· High power and current handling capability