N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITHCING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITHCING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

TOSHIBA IGBT Module Silicon N Channel IGBT

High Power Switching Applications Motor Control Applications ● Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) ● The electrodes are isolated from case. ● Low thermal resistance ● VCE (sat) = 2.1 V (typ.)

Dual IGBTMOD

Description: Powerex Dual IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge confi guration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and inter

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

TOSHIBA GTR MODULE SILIOCN N CHANNEL IGBT HIGH POWER SWITHCING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

High Power Switching Applications Motor Control Applications ● High input impedance ● High speed : tf = 0.3µs (Max) @Inductive load ● Low saturation voltage : VCE (sat) = 3.6V (Max) ● Enhancement-mode ● Includes a complete half bridge in onepackage. ● The electrodes are isolated from case.

TOSHIBA IGBT Module Silicon N Channel IGBT

High Power Switching Applications Motor Control Applications ● High input impedance ● High speed: tf = 0.3 µs (max) Inductive load ● Low saturation voltage: VCE (sat) = 2.6 V (max) ● The electrodes are isolated from case. ● Enhancement-mode

High-Power Module Silicon Carbide N-Channel MOSFET

Applications • High-Power Switching • Motor Controllers (including rail traction) Features (1) VDSS = 1200 V, ID = 600 A All SiC MOSFET Module(Low loss & High speed switching) (2) Low stray inductance, low thermal resistance, maximum Tch= 150 , built in temperature sensor. (3) Enhancement

Compact IGBT

Description: Powerex Dual IGBTMOD™ Compact IGBT Series Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and inter

HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT HIGH POWER SWITHCING APPLICATIONS MOTOR CONTROL APPLICATIONS ● The Electrodes are Isolated from Case. ● Enhancement−Mode ● Thermal Output Terminal (TH)

TOSHIBA IGBT Module Silicon N Channel IGBT

High Power Switching Applications Motor Control Applications

High Power Switching Applications Motor Control Applications

文件：219.13 Kbytes Page：13 Pages

封装/外壳：模块 包装：盒 描述：IGBT MOD 600V 600A 2770W 分立半导体产品 晶体管 - IGBT - 模块

HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

文件：123.69 Kbytes Page：7 Pages

High Power Switching Applications Motor Control Applications

文件：139.95 Kbytes Page：9 Pages

封装/外壳：模块 包装：盒 描述：IGBT MOD 1200V 600A 4300W 分立半导体产品 晶体管 - IGBT - 模块

Compact, 6W 4:1 Input, MiniDIP DC/DC Con vert ers

文件：462.82 Kbytes Page：2 Pages

JACK COVERS

文件：30.33 Kbytes Page：1 Pages

600 Series Analog Capacitance Manometers

文件：740.37 Kbytes Page：16 Pages

3M??Scotch짰 Transparent Film Tape 600

文件：572.08 Kbytes Page：6 Pages

SLIDE SWITCHES - MINIATURE

文件：218.76 Kbytes Page：2 Pages

Body cavity design provides additional clearance for component mounting

文件：816.87 Kbytes Page：1 Pages