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型号	功能描述	生产厂家企业	LOGO
MD918	NPN DUAL SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR MD918 Series types are Silicon NPN Planar EPitaxial Dual Transistors designed for dual amplifier applications.	CENTRAL	CENTRAL
MD918	Dual Transistors Dual Transistors TO-78 Case (Continued)	CENTRAL	CENTRAL
MD918	MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918	MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918	Multiple Small-Signal Transistors 文件：70.03 Kbytes Page：1 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MD918	NPN SILICON DUAL TRANSISTOR 文件：69.73 Kbytes Page：2 Pages	CENTRAL	CENTRAL
MD918	NPN DUAL SILICON TRANSISTOR 文件：125.85 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918	Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch	CENTRAL	CENTRAL
MD918A	Dual Transistors Dual Transistors TO-78 Case (Continued)	CENTRAL	CENTRAL
MD918A	NPN DUAL SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR MD918 Series types are Silicon NPN Planar EPitaxial Dual Transistors designed for dual amplifier applications.	CENTRAL	CENTRAL
MD918A	MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918AF	MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918B	MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918B	NPN DUAL SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR MD918 Series types are Silicon NPN Planar EPitaxial Dual Transistors designed for dual amplifier applications.	CENTRAL	CENTRAL
MD918B	Dual Transistors Dual Transistors TO-78 Case (Continued)	CENTRAL	CENTRAL
MD918BF	MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918F	MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918_13	NPN DUAL SILICON TRANSISTOR 文件：125.85 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918_15	NPN SILICON DUAL TRANSISTOR 文件：69.73 Kbytes Page：2 Pages	CENTRAL	CENTRAL
MD918A	NPN SILICON DUAL TRANSISTOR 文件：69.73 Kbytes Page：2 Pages	CENTRAL	CENTRAL
MD918A	Multiple Small-Signal Transistors 文件：70.03 Kbytes Page：1 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MD918A	MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918A	NPN DUAL SILICON TRANSISTOR 文件：125.85 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918A	NPN DUAL SILICON TRANSISTOR	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918AF	Multiple Small-Signal Transistors 文件：70.03 Kbytes Page：1 Pages	MOTOROLA 摩托罗拉	MOTOROLA
MD918AF	MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918B	NPN SILICON DUAL TRANSISTOR 文件：69.73 Kbytes Page：2 Pages	CENTRAL	CENTRAL
MD918B	Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch	CENTRAL	CENTRAL
MD918B	NPN DUAL SILICON TRANSISTOR 文件：125.85 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918B	MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918BF	MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MD918F	MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
FMMT918	丝印代码：3B；NPN SILICON PLANAR VHF/UHF TRANSISTOR NPN SILICON PLANAR VHF/UHF TRANSISTOR	ZETEX	ZETEX
MPS918	Amplifier Transistors Amplifier Transistors NPN Silicon	MOTOROLA 摩托罗拉	MOTOROLA
NTE918	Integrated Circuit High Speed Operational Amplifier Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external	NTE	NTE
NTE918M	Integrated Circuit High Speed Operational Amplifier Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external	NTE	NTE
NTE918SM	Integrated Circuit High Speed Operational Amplifier Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external	NTE	NTE

MD918产品属性

类型
描述
Case：
TO-78
Configuration/ Description：
Dual NPN General Purpose Amplifier/Switch
Polarity：
2XNPN
IC MAX：
50mA
PD MAX：
550mW
VCEO MAX：
15V
hFE MIN：
50
@VCE：
5V
VCE(SAT) MAX：
200mV
@IC：
10mA
@IB：
1mA
Cob MAX：
1.7pF
fT MIN：
600MHz
NF MAX：
6dB

MD918供应商更多...

更新时间：2026-8-2 17:02:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市明嘉莱科技有限公司	MD918A	MOTOROLA/摩托罗拉	25+	CAN	880000	明嘉莱只做原装正品现货	询价
深圳市坤融电子科技有限公司	MD918A	MOTOROLA/摩托罗拉	2025+	CAN	3500	原装进口价格优请找坤融电子!	询价
标准国际(香港)有限公司	MD918A	MOT	25+		9	公司优势库存热卖中!!	询价
深圳市向鸿伟业电子有限公司	MD918A	MOTOROLA/摩托罗拉	2403+	CAN	6489	原装现货热卖!十年芯路!坚持!	询价
洪芯国际半导体（深圳）有限公司	MD918	FAIRCHILD	26+	TSOPJW-12	86720	全新原装正品价格最实惠承诺假一赔百	询价
齐创科技(上海,北京,青岛)有限公司	MD918A	MOT	23+	铁帽	5000	原装正品,假一罚十	询价
深圳市一线半导体有限公司	MD918A	MOT	24+	CAN6	214		询价
艾睿（深圳）半导体有限公司	MD918F	MOTOROLA/摩托罗拉	2447	SOP6	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市创新迹电子有限公司	MD918	FAIRCHILD/仙童	22+	SOT-23	20000	公司只有原装品质保障	询价
深圳市中远芯科技有限公司	MD918A	MOTOROLA/摩托罗拉	08+	CAN	144	原装现货	询价

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MD918产品属性

MD918供应商更多...

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MD6000-6UMG641全新原装现货

MDD44-16N1B

MDC5000T1-硅集成电路SMALLBLOCK

DdatasheetPDF页码索引

MD-40SM 4 针位圆形连接器插座，母型插口焊接