位置：首页 > IC中文资料第5579页 > MD918
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MD918 | NPN DUAL SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR MD918 Series types are Silicon NPN Planar EPitaxial Dual Transistors designed for dual amplifier applications. | Central |   | |
MD918 | Dual Transistors Dual Transistors TO-78 Case (Continued) | Central | | |
MD918 | MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MD918 | Multiple Small-Signal Transistors 文件：70.03 Kbytes Page：1 Pages | Motorola 摩托罗拉 | | |
MD918 | NPN SILICON DUAL TRANSISTOR 文件：69.73 Kbytes Page：2 Pages | Central | | |
MD918 | MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MD918 | NPN DUAL SILICON TRANSISTOR 文件：125.85 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MD918 | Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch | Central | | |
MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN DUAL SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR MD918 Series types are Silicon NPN Planar EPitaxial Dual Transistors designed for dual amplifier applications. | Central | | ||
Dual Transistors Dual Transistors TO-78 Case (Continued) | Central | | ||
MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Dual Transistors Dual Transistors TO-78 Case (Continued) | Central | | ||
NPN DUAL SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR MD918 Series types are Silicon NPN Planar EPitaxial Dual Transistors designed for dual amplifier applications. | Central | | ||
MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN DUAL SILICON TRANSISTOR 文件：125.85 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON DUAL TRANSISTOR 文件：69.73 Kbytes Page：2 Pages | Central | | ||
MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON DUAL TRANSISTOR 文件：69.73 Kbytes Page：2 Pages | Central | | ||
Multiple Small-Signal Transistors 文件：70.03 Kbytes Page：1 Pages | Motorola 摩托罗拉 | | ||
NPN DUAL SILICON TRANSISTOR 文件：125.85 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN DUAL SILICON TRANSISTOR | NJS | | ||
Multiple Small-Signal Transistors 文件：70.03 Kbytes Page：1 Pages | Motorola 摩托罗拉 | | ||
MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN SILICON DUAL TRANSISTOR 文件：69.73 Kbytes Page：2 Pages | Central | | ||
Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch | Central | | ||
NPN DUAL SILICON TRANSISTOR 文件：125.85 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Compact, Portable Military Managed Gigabit Ethernet Switch FEATURES One of the most exciting advancement in technology over the last decade has been unmanned vehicles including: • Unmanned aerial vehicles (UAVs) or Drones • Land autonomous vehicles (UGVs) • Robots • Other unmanned support vehicles These vehicles must be agile, compact and highly in | ENERCON | | ||
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc | AD 亚德诺 | | ||
Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th | AD 亚德诺 | | ||
Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th | AD 亚德诺 | | ||
M12?륚 Plastic Passive I/O Box 文件：204.08 Kbytes Page：3 Pages | ALPHAWIRE | |
MD918产品属性
- 类型
描述
- 型号
MD918
- 制造商
Motorola Inc
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
25+ |
9 |
公司优势库存 热卖中!! |
||||
MOTOROLA/摩托罗拉 |
25+ |
CAN |
880000 |
明嘉莱只做原装正品现货 |
|||
MOTOROLA/摩托罗拉 |
23+ |
SOP6 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Mechatronics |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
320 |
正品原装--自家现货-实单可谈 |
||||||
FAIRCHILD/仙童 |
23+ |
SOT-23 |
89630 |
当天发货全新原装现货 |
|||
MOTOROLA/摩托罗拉 |
08+ |
CAN |
144 |
原装现货 |
|||
MOTOROLA/摩托罗拉 |
23+ |
CAN |
8678 |
原厂原装 |
|||
05+ |
原厂原装 |
5036 |
只做全新原装真实现货供应 |
||||
MOT |
9126 |
CAN |
3 |
普通 |
MD918芯片相关品牌
MD918规格书下载地址
MD918参数引脚图相关
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2013-3-17
DdatasheetPDF页码索引
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