| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MD918B | NPN DUAL SILICON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR MD918 Series types are Silicon NPN Planar EPitaxial Dual Transistors designed for dual amplifier applications. | CENTRAL |   | |
MD918B | Dual Transistors Dual Transistors TO-78 Case (Continued) | CENTRAL | | |
MD918B | MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MD918B | MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MD918B | NPN DUAL SILICON TRANSISTOR 文件：125.85 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MD918B | Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch | CENTRAL | | |
MD918B | NPN SILICON DUAL TRANSISTOR 文件：69.73 Kbytes Page：2 Pages | CENTRAL | | |
MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
MULTIPLE SILICON ANNULAR TRANSISTORS 文件：107.79 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
丝印代码：3B；NPN SILICON PLANAR VHF/UHF TRANSISTOR NPN SILICON PLANAR VHF/UHF TRANSISTOR | ZETEX | | ||
Amplifier Transistors Amplifier Transistors NPN Silicon | MOTOROLA 摩托罗拉 | | ||
Integrated Circuit High Speed Operational Amplifier Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external | NTE | | ||
Integrated Circuit High Speed Operational Amplifier Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external | NTE | | ||
Integrated Circuit High Speed Operational Amplifier Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external | NTE | |
MD918B产品属性
- 类型
描述
- Case：
TO-78
- Configuration/ Description：
Dual NPN General Purpose Amplifier/Switch
- Polarity：
2XNPN
- IC MAX：
50mA
- PD MAX：
550mW
- VCEO MAX：
15V
- hFE MIN：
50
- @VCE：
5V
- VCE(SAT) MAX：
200mV
- @IC：
10mA
- @IB：
1mA
- Cob MAX：
1.7pF
- fT MIN：
600MHz
- NF MAX：
6dB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Central Semiconductor Corp |
25+ |
TO-78-6 金属罐 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
MD918B规格书下载地址
MD918B参数引脚图相关
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- MD940A-M
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- MD940A-F-W1
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- MD-911 V
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2013-3-17
DdatasheetPDF页码索引
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