NPN DUAL SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR MD918 Series types are Silicon NPN Planar EPitaxial Dual Transistors designed for dual amplifier applications.

Dual Transistors

Dual Transistors TO-78 Case (Continued)

MULTIPLE SILICON ANNULAR TRANSISTORS

MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M

MULTIPLE SILICON ANNULAR TRANSISTORS

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NPN SILICON DUAL TRANSISTOR

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NPN DUAL SILICON TRANSISTOR

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Multiple Small-Signal Transistors

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NPN DUAL SILICON TRANSISTOR

MULTIPLE SILICON ANNULAR TRANSISTORS

MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M

MULTIPLE SILICON ANNULAR TRANSISTORS

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Multiple Small-Signal Transistors

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Compact, Portable Military Managed Gigabit Ethernet Switch

FEATURES One of the most exciting advancement in technology over the last decade has been unmanned vehicles including: • Unmanned aerial vehicles (UAVs) or Drones • Land autonomous vehicles (UGVs) • Robots • Other unmanned support vehicles These vehicles must be agile, compact and highly in

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th

Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th

M12?륚 Plastic Passive I/O Box

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