MULTIPLE SILICON ANNULAR TRANSISTORS

MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for UM at differential amplifiers, dual high frequency amplifier!, front end detectors and temperature compensation applications • Low Collector-Emitter Saturation Voltage — VCE(sat) = 0.2 Vdc (Max) @ IC = 10 mAdc • DC Current Gain - 50 (M

Multiple Small-Signal Transistors

文件：70.03 Kbytes Page：1 Pages

MULTIPLE SILICON ANNULAR TRANSISTORS

文件：107.79 Kbytes Page：2 Pages

Compact, Portable Military Managed Gigabit Ethernet Switch

FEATURES One of the most exciting advancement in technology over the last decade has been unmanned vehicles including: • Unmanned aerial vehicles (UAVs) or Drones • Land autonomous vehicles (UGVs) • Robots • Other unmanned support vehicles These vehicles must be agile, compact and highly in

Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed suc

Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th

Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches

GENERAL DESCRIPTION The ADG918/ADG919 are wideband switches using a CMOS process to provide high isolation and low insertion loss to 1 GHz. The ADG918 is an absorptive (matched) switch having 50 Ω terminated shunt legs, whereas the ADG919 is a reflective switch. These devices are designed such th

M12?륚 Plastic Passive I/O Box

文件：204.08 Kbytes Page：3 Pages