RF Power LDMOS Transistors

General Purpose Aluminium Electrolytic Capacitors 85°C

Features: • Wide CV value range for general purpose • Safely vent construction products, GPR series are guaranteed 2,000 hours at 85°C

RF Power LDMOS Transistors

Airfast RF Power LDMOS Transistor

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor

RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET

1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistor

RF Power LDMOS Transistor

RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

2--500 MHz, 600 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Wa

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistor

RF Power LDMOS Transistor

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：868.17 Kbytes Page：13 Pages

RF Power Field Effect Transistor

文件：748.8 Kbytes Page：11 Pages

RF Power LDMOS Transistors

文件：948.24 Kbytes Page：19 Pages

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.27025 Mbytes Page：20 Pages

RF Power Field Effect Transis

文件：964.68 Kbytes Page：15 Pages

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs