1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistor

RF Power LDMOS Transistor

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：868.17 Kbytes Page：13 Pages

RF Power Field Effect Transistor

文件：748.8 Kbytes Page：11 Pages

RF Power LDMOS Transistors

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RF Power LDMOS Transistor

RF Power LDMOS Transistor

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power LDMOS Transistors

RF Power LDMOS Transistors

Airfast RF Power LDMOS Transistor

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor