1805–2200 MHz, 107 W AVG., 48 V AIRFAST RF POWER GaN TRANSISTOR

N--Channel Enhancement--Mode Lateral MOSFETs

RF Power LDMOS Transistor

RF Power LDMOS Transistor

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：868.17 Kbytes Page：13 Pages

RF Power Field Effect Transistor

文件：748.8 Kbytes Page：11 Pages

RF Power LDMOS Transistors

文件：948.24 Kbytes Page：19 Pages

RF Power LDMOS Transistor

RF Power LDMOS Transistor

RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET

RF Power LDMOS Transistors

RF Power LDMOS Transistors

Airfast RF Power LDMOS Transistor

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

RF Power LDMOS Transistor